GB1421459A - Methods of manufacturing monograin layer devices - Google Patents
Methods of manufacturing monograin layer devicesInfo
- Publication number
- GB1421459A GB1421459A GB772473A GB772473A GB1421459A GB 1421459 A GB1421459 A GB 1421459A GB 772473 A GB772473 A GB 772473A GB 772473 A GB772473 A GB 772473A GB 1421459 A GB1421459 A GB 1421459A
- Authority
- GB
- United Kingdom
- Prior art keywords
- grains
- exposed
- surface layers
- cores
- polyurethane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 7
- 239000002344 surface layer Substances 0.000 abstract 6
- 229920002635 polyurethane Polymers 0.000 abstract 4
- 239000004814 polyurethane Substances 0.000 abstract 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 abstract 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000002356 single layer Substances 0.000 abstract 3
- CRBJBYGJVIBWIY-UHFFFAOYSA-N 2-isopropylphenol Chemical compound CC(C)C1=CC=CC=C1O CRBJBYGJVIBWIY-UHFFFAOYSA-N 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 239000003292 glue Substances 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract 1
- 239000004925 Acrylic resin Substances 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004593 Epoxy Substances 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 239000011230 binding agent Substances 0.000 abstract 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229920001971 elastomer Polymers 0.000 abstract 1
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
- 239000000057 synthetic resin Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
1421459 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 16 Feb 1973 [19 Feb 1972] 7724/73 Heading H1K A semi-conductor device, e.g. a solar cell or injection luminescent light source is made by first forming a monolayer of semi-conductor grains surface layers of which form PN junctions with the cores, the grains being embedded in a binder layer over part of its thickness but projecting from one face of it. After depositing a first electrode layer on the exposed parts of the grains parts of the surface layers and cores are removed, insulation selectively provided to cover the exposed parts of the surface layers but leaving parts of the cores exposed, and a second electrode layer deposited to contact these exposed parts. The grains, which are typically of gallium phosphide and of 50 Á diameter with 5 Á N type surface layers, may be formed into a monolayer by attaching to a glass plate with a thin layer of rubber glue, covering with polyurethane and then stripping the latter with the grains from the substrate and glue and increasing the exposed area of the grains by dissolving away some of the polyurethane. Then the first electrode layer of gold is vapour deposited and covered with a thick layer of polyurethane and the resulting surface ground down until the cores of the grains are exposed. In one method insulation is then selectively deposited over the exposed gold and surface layers with the PN junctions reverse biased either by electrophoresis from an aqueous solution of synthetic resin containing carboxyl and/or hydroxyl group, e.g. epoxy, alkyl or acrylate resin, and ammonia, or an organic aminemelamine based resin (if the surface layers are P type) or by electrochemical polymerization from a mixture of orthoisopropyl phenol and triethylamine in a 10 : 1 mol. ratio. In the first case the layer is cured by baking. Alternatively after the grinding process the polyurethane is exposed to ethyl acetate vapour which causes it to swell so as just to cover the junctions where it remains on evaporation of the acetate. Finally the second electrode is deposited on the resulting surface. Provision of the first electrode on the other side of the monolayer and the use of zinc selenide, gallium arsenide phosphide and gallium aluminium arsenide grains are also suggested.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7202215A NL7202215A (en) | 1972-02-19 | 1972-02-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1421459A true GB1421459A (en) | 1976-01-21 |
Family
ID=19815410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB772473A Expired GB1421459A (en) | 1972-02-19 | 1973-02-16 | Methods of manufacturing monograin layer devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3847758A (en) |
| JP (1) | JPS5117877B2 (en) |
| CA (1) | CA978665A (en) |
| FR (1) | FR2172359B1 (en) |
| GB (1) | GB1421459A (en) |
| IT (1) | IT977808B (en) |
| NL (1) | NL7202215A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4173494A (en) * | 1977-02-14 | 1979-11-06 | Jack S. Kilby | Glass support light energy converter |
| US4806495A (en) * | 1984-09-04 | 1989-02-21 | Texas Instruments Incorporated | Method of making solar array with aluminum foil matrix |
| US4917752A (en) * | 1984-09-04 | 1990-04-17 | Texas Instruments Incorporated | Method of forming contacts on semiconductor members |
| US6762359B2 (en) * | 2001-01-15 | 2004-07-13 | Fuji Machine Mfg. Co., Ltd. | Photovoltaic panel and method of producing same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2904613A (en) * | 1957-08-26 | 1959-09-15 | Hoffman Electronics Corp | Large area solar energy converter and method for making the same |
| US3040416A (en) * | 1959-05-13 | 1962-06-26 | Hoffman Electronics Corp | Method of making a large area solar cell panel |
| US3038952A (en) * | 1959-05-20 | 1962-06-12 | Hoffman Electronics Corp | Method of making a solar cell panel |
| US3575823A (en) * | 1968-07-26 | 1971-04-20 | Bell Telephone Labor Inc | Method of making a silicon target for image storage tube |
| NL6813918A (en) * | 1968-09-27 | 1970-04-01 |
-
1972
- 1972-02-19 NL NL7202215A patent/NL7202215A/xx unknown
-
1973
- 1973-02-12 US US00331993A patent/US3847758A/en not_active Expired - Lifetime
- 1973-02-14 CA CA163,757A patent/CA978665A/en not_active Expired
- 1973-02-16 GB GB772473A patent/GB1421459A/en not_active Expired
- 1973-02-16 JP JP1848573A patent/JPS5117877B2/ja not_active Expired
- 1973-02-16 IT IT67376/73A patent/IT977808B/en active
- 1973-02-16 FR FR7305574A patent/FR2172359B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT977808B (en) | 1974-09-20 |
| JPS5117877B2 (en) | 1976-06-05 |
| DE2306059A1 (en) | 1973-08-23 |
| US3847758A (en) | 1974-11-12 |
| DE2306059B2 (en) | 1976-05-20 |
| CA978665A (en) | 1975-11-25 |
| JPS4896090A (en) | 1973-12-08 |
| FR2172359A1 (en) | 1973-09-28 |
| NL7202215A (en) | 1973-08-21 |
| FR2172359B1 (en) | 1977-12-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |