JPS5259579A - Photo etching method of semiconductor substrate - Google Patents

Photo etching method of semiconductor substrate

Info

Publication number
JPS5259579A
JPS5259579A JP50135491A JP13549175A JPS5259579A JP S5259579 A JPS5259579 A JP S5259579A JP 50135491 A JP50135491 A JP 50135491A JP 13549175 A JP13549175 A JP 13549175A JP S5259579 A JPS5259579 A JP S5259579A
Authority
JP
Japan
Prior art keywords
photo etching
semiconductor substrate
etching method
photo
pigments
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50135491A
Other languages
Japanese (ja)
Inventor
Hiroo Naganuma
Makoto Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50135491A priority Critical patent/JPS5259579A/en
Publication of JPS5259579A publication Critical patent/JPS5259579A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To perform fine photo etching at high accuracy by carrying out photo etching through deposition of a photo sensitive layer by way of an adhesion accelerator layer added with pigments having light shading characteristics.
JP50135491A 1975-11-11 1975-11-11 Photo etching method of semiconductor substrate Pending JPS5259579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50135491A JPS5259579A (en) 1975-11-11 1975-11-11 Photo etching method of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50135491A JPS5259579A (en) 1975-11-11 1975-11-11 Photo etching method of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5259579A true JPS5259579A (en) 1977-05-17

Family

ID=15152965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50135491A Pending JPS5259579A (en) 1975-11-11 1975-11-11 Photo etching method of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5259579A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933827A (en) * 1982-08-19 1984-02-23 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933827A (en) * 1982-08-19 1984-02-23 Toshiba Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5259579A (en) Photo etching method of semiconductor substrate
JPS5249772A (en) Process for production of semiconductor device
JPS5280776A (en) Preparation of thin film silicon single crystal plate
JPS51114887A (en) Semiconductor device
JPS5235980A (en) Manufacturing method of semiconductor device
JPS5367454A (en) Integrated light circuit and its production
JPS5387668A (en) Forming method of patterns
JPS5617078A (en) Semiconductor device containing photosensor
JPS52131751A (en) Measuring method for thickness of transparent film
JPS55143031A (en) Manufacture of semiconductor device
JPS52139377A (en) Production of semiconductor device
JPS5788044A (en) Manufacture of glass mask
JPS52129276A (en) Production of semiconductor device
JPS5221841A (en) Solid state photoconductive wave path and its manufacturing method
JPS5763829A (en) Pattern forming method
JPS51147263A (en) Etching method of insulating film
JPS5314555A (en) Depositing method of impurity to silicon wafersa
JPS51144400A (en) Process for production of thin film silicon nitride
JPS53143242A (en) Production of optical diffusing plate
JPS53117975A (en) Etching method of semiconductor substrates
JPS5731171A (en) Semiconductor device
JPS57130433A (en) Manufacture of single crystal semiconductor thin film
JPS53138286A (en) Manufacture of semiconductor device
JPS52127174A (en) Minute patern formation method
JPS53120529A (en) Forming method of positive type radiation sensitive material layer

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080514

Year of fee payment: 9

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090514

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 11

Free format text: PAYMENT UNTIL: 20100514

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 11

Free format text: PAYMENT UNTIL: 20100514

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110514

Year of fee payment: 12

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110514

Year of fee payment: 12