GB1414202A - Method of manufacturing monocrystalline semiconductor bodies - Google Patents

Method of manufacturing monocrystalline semiconductor bodies

Info

Publication number
GB1414202A
GB1414202A GB199973A GB199973A GB1414202A GB 1414202 A GB1414202 A GB 1414202A GB 199973 A GB199973 A GB 199973A GB 199973 A GB199973 A GB 199973A GB 1414202 A GB1414202 A GB 1414202A
Authority
GB
United Kingdom
Prior art keywords
crystal
dislocations
crucible
melt
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB199973A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1414202A publication Critical patent/GB1414202A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB199973A 1972-01-18 1973-01-15 Method of manufacturing monocrystalline semiconductor bodies Expired GB1414202A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7200677A NL7200677A (https=) 1972-01-18 1972-01-18

Publications (1)

Publication Number Publication Date
GB1414202A true GB1414202A (en) 1975-11-19

Family

ID=19815182

Family Applications (1)

Application Number Title Priority Date Filing Date
GB199973A Expired GB1414202A (en) 1972-01-18 1973-01-15 Method of manufacturing monocrystalline semiconductor bodies

Country Status (7)

Country Link
JP (1) JPS504975A (https=)
BE (1) BE794122A (https=)
DE (1) DE2301148A1 (https=)
FR (1) FR2168435B1 (https=)
GB (1) GB1414202A (https=)
IT (1) IT978173B (https=)
NL (1) NL7200677A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2325954A3 (en) * 2006-10-20 2011-11-02 Raytheon Company Enhanced beam quality from a laser rod using interstitial dopants
CN109103088A (zh) * 2018-08-30 2018-12-28 成都海威华芯科技有限公司 一种欧姆接触金属锗的蒸镀方法及其应用
CN114227485A (zh) * 2021-12-20 2022-03-25 连云港国伦石英制品有限公司 一种大尺寸硅片氧化掺杂用石英器件的成型加工及清洗装置
CN115726025A (zh) * 2021-08-31 2023-03-03 隆基绿能科技股份有限公司 一种吸料装置和吸料方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2344124A1 (fr) * 1976-03-12 1977-10-07 Ibm Procede de fabrication de dispositifs semi-conducteurs
JPS61266389A (ja) * 1985-05-21 1986-11-26 Sumitomo Electric Ind Ltd 結晶内不純物均一化用二重るつぼ
JPH01143224A (ja) * 1987-11-28 1989-06-05 Toshiba Corp 半導体基板の表面処理方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2325954A3 (en) * 2006-10-20 2011-11-02 Raytheon Company Enhanced beam quality from a laser rod using interstitial dopants
CN109103088A (zh) * 2018-08-30 2018-12-28 成都海威华芯科技有限公司 一种欧姆接触金属锗的蒸镀方法及其应用
CN109103088B (zh) * 2018-08-30 2020-09-01 成都海威华芯科技有限公司 一种欧姆接触金属锗的蒸镀方法及其应用
CN115726025A (zh) * 2021-08-31 2023-03-03 隆基绿能科技股份有限公司 一种吸料装置和吸料方法
CN114227485A (zh) * 2021-12-20 2022-03-25 连云港国伦石英制品有限公司 一种大尺寸硅片氧化掺杂用石英器件的成型加工及清洗装置

Also Published As

Publication number Publication date
NL7200677A (https=) 1973-07-20
BE794122A (fr) 1973-07-16
FR2168435A1 (https=) 1973-08-31
IT978173B (it) 1974-09-20
JPS504975A (https=) 1975-01-20
DE2301148A1 (de) 1973-07-26
FR2168435B1 (https=) 1976-08-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee