NL7200677A - - Google Patents
Info
- Publication number
- NL7200677A NL7200677A NL7200677A NL7200677A NL7200677A NL 7200677 A NL7200677 A NL 7200677A NL 7200677 A NL7200677 A NL 7200677A NL 7200677 A NL7200677 A NL 7200677A NL 7200677 A NL7200677 A NL 7200677A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
- H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Light Receiving Elements (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BE794122D BE794122A (fr) | 1972-01-18 | Werkwijze voor het vervaardigen van eenkristallijne halfgeleiderlichamen en halfgeleiderinrichtingen, in het bijzonder stralingsdetectoren die dergelijke eenkristallijne halfgeleiderlichamen | |
| NL7200677A NL7200677A (https=) | 1972-01-18 | 1972-01-18 | |
| DE2301148A DE2301148A1 (de) | 1972-01-18 | 1973-01-11 | Verfahren zur herstellung einkristalliner halbleiterkoerper und halbleiteranordnungen, insbesondere strahlungsdetektoren, die derartige einkristalline halbleiterkoerper enthalten |
| IT19231/73A IT978173B (it) | 1972-01-18 | 1973-01-15 | Metodo di fabbricazione di corpi semiconduttori monocristallini e dispositivi semiconduttori in par ticolare rivelatori di radiazioni comprendenti tali corpi semicondut tori |
| GB199973A GB1414202A (en) | 1972-01-18 | 1973-01-15 | Method of manufacturing monocrystalline semiconductor bodies |
| JP48007129A JPS504975A (https=) | 1972-01-18 | 1973-01-17 | |
| FR7301578A FR2168435B1 (https=) | 1972-01-18 | 1973-01-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7200677A NL7200677A (https=) | 1972-01-18 | 1972-01-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7200677A true NL7200677A (https=) | 1973-07-20 |
Family
ID=19815182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7200677A NL7200677A (https=) | 1972-01-18 | 1972-01-18 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS504975A (https=) |
| BE (1) | BE794122A (https=) |
| DE (1) | DE2301148A1 (https=) |
| FR (1) | FR2168435B1 (https=) |
| GB (1) | GB1414202A (https=) |
| IT (1) | IT978173B (https=) |
| NL (1) | NL7200677A (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2344124A1 (fr) * | 1976-03-12 | 1977-10-07 | Ibm | Procede de fabrication de dispositifs semi-conducteurs |
| JPS61266389A (ja) * | 1985-05-21 | 1986-11-26 | Sumitomo Electric Ind Ltd | 結晶内不純物均一化用二重るつぼ |
| JPH01143224A (ja) * | 1987-11-28 | 1989-06-05 | Toshiba Corp | 半導体基板の表面処理方法 |
| US7535947B2 (en) * | 2006-10-20 | 2009-05-19 | Raytheon Company | Enhanced beam quality from a laser rod using interstitial dopants |
| CN109103088B (zh) * | 2018-08-30 | 2020-09-01 | 成都海威华芯科技有限公司 | 一种欧姆接触金属锗的蒸镀方法及其应用 |
| CN115726025A (zh) * | 2021-08-31 | 2023-03-03 | 隆基绿能科技股份有限公司 | 一种吸料装置和吸料方法 |
| CN114227485B (zh) * | 2021-12-20 | 2022-09-02 | 连云港国伦石英制品有限公司 | 一种大尺寸硅片氧化掺杂用石英器件的成型加工及清洗装置 |
-
0
- BE BE794122D patent/BE794122A/xx unknown
-
1972
- 1972-01-18 NL NL7200677A patent/NL7200677A/xx unknown
-
1973
- 1973-01-11 DE DE2301148A patent/DE2301148A1/de active Pending
- 1973-01-15 IT IT19231/73A patent/IT978173B/it active
- 1973-01-15 GB GB199973A patent/GB1414202A/en not_active Expired
- 1973-01-17 FR FR7301578A patent/FR2168435B1/fr not_active Expired
- 1973-01-17 JP JP48007129A patent/JPS504975A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| BE794122A (fr) | 1973-07-16 |
| FR2168435A1 (https=) | 1973-08-31 |
| IT978173B (it) | 1974-09-20 |
| JPS504975A (https=) | 1975-01-20 |
| DE2301148A1 (de) | 1973-07-26 |
| FR2168435B1 (https=) | 1976-08-27 |
| GB1414202A (en) | 1975-11-19 |