GB1380165A - Method for forming layers of predetermined thickness - Google Patents

Method for forming layers of predetermined thickness

Info

Publication number
GB1380165A
GB1380165A GB405272A GB405272A GB1380165A GB 1380165 A GB1380165 A GB 1380165A GB 405272 A GB405272 A GB 405272A GB 405272 A GB405272 A GB 405272A GB 1380165 A GB1380165 A GB 1380165A
Authority
GB
United Kingdom
Prior art keywords
layer
coating
substrate
sputtering
sputter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB405272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1380165A publication Critical patent/GB1380165A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Chemical Vapour Deposition (AREA)
GB405272A 1971-03-19 1972-01-28 Method for forming layers of predetermined thickness Expired GB1380165A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00125993A US3849276A (en) 1971-03-19 1971-03-19 Process for forming reactive layers whose thickness is independent of time

Publications (1)

Publication Number Publication Date
GB1380165A true GB1380165A (en) 1975-01-08

Family

ID=22422437

Family Applications (1)

Application Number Title Priority Date Filing Date
GB405272A Expired GB1380165A (en) 1971-03-19 1972-01-28 Method for forming layers of predetermined thickness

Country Status (5)

Country Link
US (1) US3849276A (enExample)
JP (1) JPS526269B1 (enExample)
DE (1) DE2203080C2 (enExample)
FR (1) FR2130075B1 (enExample)
GB (1) GB1380165A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984301A (en) * 1973-08-11 1976-10-05 Nippon Electric Varian, Ltd. Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge
JPS52151471U (enExample) * 1976-05-13 1977-11-16
US4075756A (en) * 1976-06-30 1978-02-28 International Business Machines Corporation Process for fabricating above and below ground plane wiring on one side of a supporting substrate and the resulting circuit configuration
JPS5342274U (enExample) * 1976-09-16 1978-04-12
FR2371777A1 (fr) * 1976-11-18 1978-06-16 Loic Henry Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v
JPS5460364U (enExample) * 1977-10-05 1979-04-26
JPS5588382A (en) * 1978-12-27 1980-07-04 Fujitsu Ltd Preparation of tunnel junction type josephson element
US4274015A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation Self-resetting Josephson digital current amplifier
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
JPS55155171A (en) * 1979-05-23 1980-12-03 Hitachi Ltd Refrigerating chamber
US4360898A (en) * 1980-06-30 1982-11-23 International Business Machines Corporation Programmable logic array system incorporating Josephson devices
US4351712A (en) * 1980-12-10 1982-09-28 International Business Machines Corporation Low energy ion beam oxidation process
US4430662A (en) * 1981-04-09 1984-02-07 Sperry Corporation Superconductive tunnel junction integrated circuit
US4859253A (en) * 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US6355580B1 (en) 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH233236A (de) * 1941-11-01 1944-07-15 Berghaus Bernhard Verfahren zum Vergüten von Gegenständen.
CH342980A (de) * 1950-11-09 1959-12-15 Berghaus Elektrophysik Anst Verfahren zur Diffusionsbehandlung von Rohren aus Eisen und Stahl oder deren Legierungen
DE1040134B (de) * 1956-10-25 1958-10-02 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen mit Halbleiterkoerpern mit p-n-UEbergang
US3573185A (en) * 1968-12-16 1971-03-30 Us Army Anodic sputtering

Also Published As

Publication number Publication date
DE2203080C2 (de) 1983-02-17
DE2203080A1 (de) 1972-09-28
US3849276A (en) 1974-11-19
FR2130075B1 (enExample) 1974-09-13
FR2130075A1 (enExample) 1972-11-03
JPS526269B1 (enExample) 1977-02-21
JPS4725070A (enExample) 1972-10-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee