GB1378302A - Production of semiconductor rods - Google Patents

Production of semiconductor rods

Info

Publication number
GB1378302A
GB1378302A GB1222872A GB1222872A GB1378302A GB 1378302 A GB1378302 A GB 1378302A GB 1222872 A GB1222872 A GB 1222872A GB 1222872 A GB1222872 A GB 1222872A GB 1378302 A GB1378302 A GB 1378302A
Authority
GB
United Kingdom
Prior art keywords
semi
silicon
gas
inlet
rods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1222872A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1378302A publication Critical patent/GB1378302A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1222872A 1971-04-06 1972-03-16 Production of semiconductor rods Expired GB1378302A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712116746 DE2116746C3 (de) 1971-04-06 1971-04-06 Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung

Publications (1)

Publication Number Publication Date
GB1378302A true GB1378302A (en) 1974-12-27

Family

ID=5804021

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1222872A Expired GB1378302A (en) 1971-04-06 1972-03-16 Production of semiconductor rods

Country Status (12)

Country Link
JP (1) JPS5312358B1 (de)
AT (1) AT324429B (de)
BE (1) BE778746A (de)
CA (1) CA969839A (de)
CS (1) CS169753B2 (de)
DD (1) DD100404A5 (de)
DE (1) DE2116746C3 (de)
DK (1) DK142625C (de)
FR (1) FR2132404B1 (de)
GB (1) GB1378302A (de)
IT (1) IT950953B (de)
NL (1) NL7201633A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101224888B (zh) * 2007-10-23 2010-05-19 四川永祥多晶硅有限公司 多晶硅氢还原炉的硅芯棒加热启动方法
WO2010086363A2 (en) * 2009-01-29 2010-08-05 Centrotherm Sitec Gmbh Arrangement and method for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor
WO2012171975A1 (en) * 2011-06-14 2012-12-20 Memc Electronic Materials S.P.A. Methods and systems for controlling silicon rod temperature

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2609564A1 (de) * 1976-03-08 1977-09-15 Siemens Ag Verfahren zum abscheiden von elementarem silicium aus der gasphase
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101224888B (zh) * 2007-10-23 2010-05-19 四川永祥多晶硅有限公司 多晶硅氢还原炉的硅芯棒加热启动方法
WO2010086363A2 (en) * 2009-01-29 2010-08-05 Centrotherm Sitec Gmbh Arrangement and method for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor
WO2010086363A3 (en) * 2009-01-29 2010-09-23 Centrotherm Sitec Gmbh Arrangement and method for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor
CN102300809A (zh) * 2009-01-29 2011-12-28 森托塞姆硅科技有限公司 用于测量硅沉积反应器中硅棒的温度和生长厚度的设备和方法
CN102300809B (zh) * 2009-01-29 2014-03-12 森托塞姆硅科技有限公司 用于测量硅沉积反应器中硅棒的温度和生长厚度的设备和方法
WO2012171975A1 (en) * 2011-06-14 2012-12-20 Memc Electronic Materials S.P.A. Methods and systems for controlling silicon rod temperature

Also Published As

Publication number Publication date
DE2116746B2 (de) 1978-04-13
AT324429B (de) 1975-08-25
IT950953B (it) 1973-06-20
CA969839A (en) 1975-06-24
DK142625C (da) 1981-08-03
CS169753B2 (de) 1976-07-29
DK142625B (da) 1980-12-01
FR2132404B1 (de) 1974-08-02
JPS5312358B1 (de) 1978-04-28
FR2132404A1 (de) 1972-11-17
DE2116746C3 (de) 1978-12-07
DD100404A5 (de) 1973-09-20
BE778746A (fr) 1972-05-16
NL7201633A (de) 1972-10-10
PL73356B1 (de) 1974-08-30
DE2116746A1 (de) 1972-10-19

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee