CA969839A - Semiconductor rod manufacturing method - Google Patents

Semiconductor rod manufacturing method

Info

Publication number
CA969839A
CA969839A CA138,416A CA138416A CA969839A CA 969839 A CA969839 A CA 969839A CA 138416 A CA138416 A CA 138416A CA 969839 A CA969839 A CA 969839A
Authority
CA
Canada
Prior art keywords
rod manufacturing
semiconductor rod
semiconductor
manufacturing
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA138,416A
Other languages
English (en)
Other versions
CA138416S (en
Inventor
Hans Stut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA969839A publication Critical patent/CA969839A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
CA138,416A 1971-04-06 1972-03-29 Semiconductor rod manufacturing method Expired CA969839A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712116746 DE2116746C3 (de) 1971-04-06 1971-04-06 Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung

Publications (1)

Publication Number Publication Date
CA969839A true CA969839A (en) 1975-06-24

Family

ID=5804021

Family Applications (1)

Application Number Title Priority Date Filing Date
CA138,416A Expired CA969839A (en) 1971-04-06 1972-03-29 Semiconductor rod manufacturing method

Country Status (12)

Country Link
JP (1) JPS5312358B1 (de)
AT (1) AT324429B (de)
BE (1) BE778746A (de)
CA (1) CA969839A (de)
CS (1) CS169753B2 (de)
DD (1) DD100404A5 (de)
DE (1) DE2116746C3 (de)
DK (1) DK142625C (de)
FR (1) FR2132404B1 (de)
GB (1) GB1378302A (de)
IT (1) IT950953B (de)
NL (1) NL7201633A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2609564A1 (de) * 1976-03-08 1977-09-15 Siemens Ag Verfahren zum abscheiden von elementarem silicium aus der gasphase
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
CN101224888B (zh) * 2007-10-23 2010-05-19 四川永祥多晶硅有限公司 多晶硅氢还原炉的硅芯棒加热启动方法
DE102009010086B4 (de) * 2009-01-29 2013-04-11 Centrotherm Sitec Gmbh Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor
US20120322175A1 (en) * 2011-06-14 2012-12-20 Memc Electronic Materials Spa Methods and Systems For Controlling SiIicon Rod Temperature

Also Published As

Publication number Publication date
PL73356B1 (de) 1974-08-30
DD100404A5 (de) 1973-09-20
AT324429B (de) 1975-08-25
NL7201633A (de) 1972-10-10
DK142625C (da) 1981-08-03
FR2132404A1 (de) 1972-11-17
BE778746A (fr) 1972-05-16
FR2132404B1 (de) 1974-08-02
IT950953B (it) 1973-06-20
JPS5312358B1 (de) 1978-04-28
DE2116746B2 (de) 1978-04-13
DE2116746A1 (de) 1972-10-19
DE2116746C3 (de) 1978-12-07
DK142625B (da) 1980-12-01
GB1378302A (en) 1974-12-27
CS169753B2 (de) 1976-07-29

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