JPS5312358B1 - - Google Patents

Info

Publication number
JPS5312358B1
JPS5312358B1 JP3395072A JP3395072A JPS5312358B1 JP S5312358 B1 JPS5312358 B1 JP S5312358B1 JP 3395072 A JP3395072 A JP 3395072A JP 3395072 A JP3395072 A JP 3395072A JP S5312358 B1 JPS5312358 B1 JP S5312358B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3395072A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5312358B1 publication Critical patent/JPS5312358B1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3395072A 1971-04-06 1972-04-06 Pending JPS5312358B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712116746 DE2116746C3 (de) 1971-04-06 1971-04-06 Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung

Publications (1)

Publication Number Publication Date
JPS5312358B1 true JPS5312358B1 (de) 1978-04-28

Family

ID=5804021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3395072A Pending JPS5312358B1 (de) 1971-04-06 1972-04-06

Country Status (12)

Country Link
JP (1) JPS5312358B1 (de)
AT (1) AT324429B (de)
BE (1) BE778746A (de)
CA (1) CA969839A (de)
CS (1) CS169753B2 (de)
DD (1) DD100404A5 (de)
DE (1) DE2116746C3 (de)
DK (1) DK142625C (de)
FR (1) FR2132404B1 (de)
GB (1) GB1378302A (de)
IT (1) IT950953B (de)
NL (1) NL7201633A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2609564A1 (de) * 1976-03-08 1977-09-15 Siemens Ag Verfahren zum abscheiden von elementarem silicium aus der gasphase
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
CN101224888B (zh) * 2007-10-23 2010-05-19 四川永祥多晶硅有限公司 多晶硅氢还原炉的硅芯棒加热启动方法
DE102009010086B4 (de) * 2009-01-29 2013-04-11 Centrotherm Sitec Gmbh Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor
US20120322175A1 (en) * 2011-06-14 2012-12-20 Memc Electronic Materials Spa Methods and Systems For Controlling SiIicon Rod Temperature

Also Published As

Publication number Publication date
PL73356B1 (de) 1974-08-30
DD100404A5 (de) 1973-09-20
AT324429B (de) 1975-08-25
CA969839A (en) 1975-06-24
NL7201633A (de) 1972-10-10
DK142625C (da) 1981-08-03
FR2132404A1 (de) 1972-11-17
BE778746A (fr) 1972-05-16
FR2132404B1 (de) 1974-08-02
IT950953B (it) 1973-06-20
DE2116746B2 (de) 1978-04-13
DE2116746A1 (de) 1972-10-19
DE2116746C3 (de) 1978-12-07
DK142625B (da) 1980-12-01
GB1378302A (en) 1974-12-27
CS169753B2 (de) 1976-07-29

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