ES8402462A1 - Procedimiento para la fabricacion de semiconductores amorfos - Google Patents
Procedimiento para la fabricacion de semiconductores amorfosInfo
- Publication number
- ES8402462A1 ES8402462A1 ES510893A ES510893A ES8402462A1 ES 8402462 A1 ES8402462 A1 ES 8402462A1 ES 510893 A ES510893 A ES 510893A ES 510893 A ES510893 A ES 510893A ES 8402462 A1 ES8402462 A1 ES 8402462A1
- Authority
- ES
- Spain
- Prior art keywords
- substrate
- outlet
- reaction chamber
- inlet
- gaseous mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 7
- 238000006243 chemical reaction Methods 0.000 abstract 4
- 239000008246 gaseous mixture Substances 0.000 abstract 3
- 229920000548 poly(silane) polymer Polymers 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- 239000011230 binding agent Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
Abstract
PROCEDIMIENTO PARA LA FABRICACION DE SEMICONDUCTORES AMORFOS. CONSISTE EN LA DESCOMPOSICION CON CALOR DE UNO O VARIOS POLISEMICONDUCTANOS DE FORMULA GENH2N+2 EN FASE GASEOSA, DESDE DIGERMANIOS HASTA HEXAGERMANIOS, EN LA QUE N VARIA DE 2 A 6, Y A UNA TEMPERATURA ENTRE 300G Y 500GC Y PRESION PARCIAL ENTRE 1 TORR Y 100 TORR CON DOS FASES; A) FORMACION DE UN CUERPO SOBRE UN SUBSTRATO, POR UNA SERIE DE DESCOMPOSICIONES QUE CONSTITUYEN CADA UNA, UNA CAPA, QUE SE REALIZA POR DESCOMPOSICION CON CALOR DE UNO A VARIOS POLISILANOS DE FORMULA SINH2N+2 EN FASE GASEOSA, EN LA QUE N VARIA DE 2 A 6, DANDO DISILANOS A HEXASILANOS, QUE PUEDEN TENER UNO O VARIOS CONTAMINANTES COMO BORO Y AZUFRE Y B) PROPORCIONAR UNO O VARIOS CONTACTOS A DICHO CUERPO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24270781A | 1981-03-11 | 1981-03-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8402462A1 true ES8402462A1 (es) | 1984-02-01 |
ES510893A0 ES510893A0 (es) | 1984-02-01 |
Family
ID=22915870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES510893A Granted ES510893A0 (es) | 1981-03-11 | 1982-03-10 | Procedimiento para la fabricacion de semiconductores amorfos |
Country Status (11)
Country | Link |
---|---|
EP (1) | EP0075007A4 (es) |
JP (1) | JPS58500360A (es) |
KR (1) | KR910002764B1 (es) |
CA (1) | CA1187622A (es) |
ES (1) | ES510893A0 (es) |
HU (1) | HU187713B (es) |
IN (1) | IN156594B (es) |
IT (1) | IT1150674B (es) |
NO (1) | NO823744L (es) |
OA (1) | OA07249A (es) |
WO (1) | WO1982003069A1 (es) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1245109A (en) * | 1983-10-31 | 1988-11-22 | Hsien-Kun Chu | Method of forming amorphous polymeric halosilane films and products produced therefrom |
FR2555206B1 (fr) * | 1983-11-22 | 1986-05-09 | Thomson Csf | Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede |
DE3441044A1 (de) * | 1984-11-09 | 1986-05-22 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen |
US4637895A (en) * | 1985-04-01 | 1987-01-20 | Energy Conversion Devices, Inc. | Gas mixtures for the vapor deposition of semiconductor material |
US4696834A (en) * | 1986-02-28 | 1987-09-29 | Dow Corning Corporation | Silicon-containing coatings and a method for their preparation |
US4762808A (en) * | 1987-06-22 | 1988-08-09 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
US4923719A (en) * | 1988-08-22 | 1990-05-08 | Allied-Signal Inc. | Method of coating silicon carbide fibers |
US5424097A (en) * | 1993-09-30 | 1995-06-13 | Specialty Coating Systems, Inc. | Continuous vapor deposition apparatus |
WO1997014666A1 (en) * | 1995-10-18 | 1997-04-24 | Specialty Coating Systems, Inc. | Processes for the preparation of octafluoro-[2,2]paracyclophane |
EP0862664B1 (en) * | 1995-10-27 | 2003-01-02 | Specialty Coating Systems, Inc. | Method and apparatus for the deposition of parylene af4 onto semiconductor wafers |
US5806319A (en) * | 1997-03-13 | 1998-09-15 | Wary; John | Method and apparatus for cryogenically cooling a deposition chamber |
US6051276A (en) * | 1997-03-14 | 2000-04-18 | Alpha Metals, Inc. | Internally heated pyrolysis zone |
US5841005A (en) * | 1997-03-14 | 1998-11-24 | Dolbier, Jr.; William R. | Parylene AF4 synthesis |
WO2007044429A2 (en) | 2005-10-05 | 2007-04-19 | Nanogram Corporation | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
US7799376B2 (en) * | 2007-07-27 | 2010-09-21 | Dalsa Semiconductor Inc. | Method of controlling film stress in MEMS devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USB524765I5 (es) * | 1966-02-03 | 1900-01-01 | ||
US3490961A (en) * | 1966-12-21 | 1970-01-20 | Sprague Electric Co | Method of producing silicon body |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4237150A (en) * | 1979-04-18 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Method of producing hydrogenated amorphous silicon film |
US4237151A (en) * | 1979-06-26 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Thermal decomposition of silane to form hydrogenated amorphous Si film |
JPS5767938A (en) * | 1980-10-16 | 1982-04-24 | Canon Inc | Production of photoconductive member |
-
1982
- 1982-03-10 ES ES510893A patent/ES510893A0/es active Granted
- 1982-03-10 CA CA000398016A patent/CA1187622A/en not_active Expired
- 1982-03-10 HU HU821672A patent/HU187713B/hu unknown
- 1982-03-10 EP EP19820901328 patent/EP0075007A4/en not_active Withdrawn
- 1982-03-10 WO PCT/US1982/000299 patent/WO1982003069A1/en not_active Application Discontinuation
- 1982-03-10 JP JP57501373A patent/JPS58500360A/ja active Pending
- 1982-03-11 KR KR8201088A patent/KR910002764B1/ko active
- 1982-03-11 IT IT20100/82A patent/IT1150674B/it active
- 1982-03-15 IN IN291/CAL/82A patent/IN156594B/en unknown
- 1982-11-10 NO NO823744A patent/NO823744L/no unknown
- 1982-11-11 OA OA57842A patent/OA07249A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
CA1187622A (en) | 1985-05-21 |
IN156594B (es) | 1985-09-14 |
OA07249A (fr) | 1984-08-31 |
NO823744L (no) | 1982-11-10 |
WO1982003069A1 (en) | 1982-09-16 |
HU187713B (en) | 1986-02-28 |
IT1150674B (it) | 1986-12-17 |
EP0075007A1 (en) | 1983-03-30 |
IT8220100A0 (it) | 1982-03-11 |
KR910002764B1 (ko) | 1991-05-04 |
EP0075007A4 (en) | 1984-06-05 |
JPS58500360A (ja) | 1983-03-10 |
ES510893A0 (es) | 1984-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19981103 |