IT1150674B - Procedimento per la produzione di un semiconduttore amorfo e dispositivi che contengono tale semiconduttore - Google Patents

Procedimento per la produzione di un semiconduttore amorfo e dispositivi che contengono tale semiconduttore

Info

Publication number
IT1150674B
IT1150674B IT20100/82A IT2010082A IT1150674B IT 1150674 B IT1150674 B IT 1150674B IT 20100/82 A IT20100/82 A IT 20100/82A IT 2010082 A IT2010082 A IT 2010082A IT 1150674 B IT1150674 B IT 1150674B
Authority
IT
Italy
Prior art keywords
semiconductor
amorphic
procedure
production
devices containing
Prior art date
Application number
IT20100/82A
Other languages
English (en)
Other versions
IT8220100A0 (it
Inventor
Alan G Macdiarmid
Zoltan J Kiss
Original Assignee
Chronar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chronar Corp filed Critical Chronar Corp
Publication of IT8220100A0 publication Critical patent/IT8220100A0/it
Application granted granted Critical
Publication of IT1150674B publication Critical patent/IT1150674B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02425Conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02441Group 14 semiconducting materials
    • H01L21/0245Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
IT20100/82A 1981-03-11 1982-03-11 Procedimento per la produzione di un semiconduttore amorfo e dispositivi che contengono tale semiconduttore IT1150674B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24270781A 1981-03-11 1981-03-11

Publications (2)

Publication Number Publication Date
IT8220100A0 IT8220100A0 (it) 1982-03-11
IT1150674B true IT1150674B (it) 1986-12-17

Family

ID=22915870

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20100/82A IT1150674B (it) 1981-03-11 1982-03-11 Procedimento per la produzione di un semiconduttore amorfo e dispositivi che contengono tale semiconduttore

Country Status (11)

Country Link
EP (1) EP0075007A4 (it)
JP (1) JPS58500360A (it)
KR (1) KR910002764B1 (it)
CA (1) CA1187622A (it)
ES (1) ES8402462A1 (it)
HU (1) HU187713B (it)
IN (1) IN156594B (it)
IT (1) IT1150674B (it)
NO (1) NO823744L (it)
OA (1) OA07249A (it)
WO (1) WO1982003069A1 (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1245109A (en) * 1983-10-31 1988-11-22 Hsien-Kun Chu Method of forming amorphous polymeric halosilane films and products produced therefrom
FR2555206B1 (fr) * 1983-11-22 1986-05-09 Thomson Csf Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede
DE3441044A1 (de) * 1984-11-09 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen
US4637895A (en) * 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
US4923719A (en) * 1988-08-22 1990-05-08 Allied-Signal Inc. Method of coating silicon carbide fibers
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
AU7447896A (en) * 1995-10-18 1997-05-07 Specialty Coating Systems, Inc. Processes for the preparation of octafluoro-{2,2}paracyclophane
EP0862664B1 (en) * 1995-10-27 2003-01-02 Specialty Coating Systems, Inc. Method and apparatus for the deposition of parylene af4 onto semiconductor wafers
US5806319A (en) * 1997-03-13 1998-09-15 Wary; John Method and apparatus for cryogenically cooling a deposition chamber
US6051276A (en) * 1997-03-14 2000-04-18 Alpha Metals, Inc. Internally heated pyrolysis zone
US5841005A (en) * 1997-03-14 1998-11-24 Dolbier, Jr.; William R. Parylene AF4 synthesis
WO2007044429A2 (en) 2005-10-05 2007-04-19 Nanogram Corporation Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions
US7799376B2 (en) * 2007-07-27 2010-09-21 Dalsa Semiconductor Inc. Method of controlling film stress in MEMS devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB524765I5 (it) * 1966-02-03 1900-01-01
US3490961A (en) * 1966-12-21 1970-01-20 Sprague Electric Co Method of producing silicon body
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4237150A (en) * 1979-04-18 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Method of producing hydrogenated amorphous silicon film
US4237151A (en) * 1979-06-26 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Thermal decomposition of silane to form hydrogenated amorphous Si film
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member

Also Published As

Publication number Publication date
WO1982003069A1 (en) 1982-09-16
CA1187622A (en) 1985-05-21
EP0075007A1 (en) 1983-03-30
JPS58500360A (ja) 1983-03-10
EP0075007A4 (en) 1984-06-05
IN156594B (it) 1985-09-14
NO823744L (no) 1982-11-10
IT8220100A0 (it) 1982-03-11
ES510893A0 (es) 1984-02-01
OA07249A (fr) 1984-08-31
ES8402462A1 (es) 1984-02-01
KR910002764B1 (ko) 1991-05-04
HU187713B (en) 1986-02-28

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