ES551592A0 - Procedimiento para la fabricacion de dispositivos semi-conductores - Google Patents

Procedimiento para la fabricacion de dispositivos semi-conductores

Info

Publication number
ES551592A0
ES551592A0 ES551592A ES551592A ES551592A0 ES 551592 A0 ES551592 A0 ES 551592A0 ES 551592 A ES551592 A ES 551592A ES 551592 A ES551592 A ES 551592A ES 551592 A0 ES551592 A0 ES 551592A0
Authority
ES
Spain
Prior art keywords
semi
procedure
manufacture
conductor devices
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES551592A
Other languages
English (en)
Other versions
ES8707022A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES551592A0 publication Critical patent/ES551592A0/es
Publication of ES8707022A1 publication Critical patent/ES8707022A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
ES551592A 1985-02-04 1986-02-03 Procedimiento para la fabricacion de dispositivos semi-conductores Expired ES8707022A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/697,645 US4683024A (en) 1985-02-04 1985-02-04 Device fabrication method using spin-on glass resins

Publications (2)

Publication Number Publication Date
ES551592A0 true ES551592A0 (es) 1987-07-01
ES8707022A1 ES8707022A1 (es) 1987-07-01

Family

ID=24801937

Family Applications (1)

Application Number Title Priority Date Filing Date
ES551592A Expired ES8707022A1 (es) 1985-02-04 1986-02-03 Procedimiento para la fabricacion de dispositivos semi-conductores

Country Status (7)

Country Link
US (1) US4683024A (es)
EP (1) EP0211044B1 (es)
JP (1) JPH073578B2 (es)
KR (1) KR930010222B1 (es)
CA (1) CA1298761C (es)
ES (1) ES8707022A1 (es)
WO (1) WO1986004695A1 (es)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8703039A (nl) * 1987-12-16 1989-07-17 Philips Nv Werkwijze voor het patroonmatig vervaardigen van een dunne laag uit een oxidisch supergeleidend materiaal.
US5169494A (en) * 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
US5198298A (en) * 1989-10-24 1993-03-30 Advanced Micro Devices, Inc. Etch stop layer using polymers
US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
US5126287A (en) * 1990-06-07 1992-06-30 Mcnc Self-aligned electron emitter fabrication method and devices formed thereby
JPH0452644A (ja) * 1990-06-21 1992-02-20 Nec Corp 多層レジストパターン形成方法
EP0463870B1 (en) * 1990-06-26 1999-02-24 Fujitsu Limited Method of plasma treating a resist using hydrogen gas
JP2665404B2 (ja) * 1991-02-18 1997-10-22 シャープ株式会社 半導体装置の製造方法
DE69233684D1 (de) * 1991-02-22 2007-04-12 Canon Kk Elektrischer Verbindungskörper und Herstellungsverfahren dafür
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
JP2699695B2 (ja) * 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5264076A (en) * 1992-12-17 1993-11-23 At&T Bell Laboratories Integrated circuit process using a "hard mask"
US5561339A (en) * 1993-03-11 1996-10-01 Fed Corporation Field emission array magnetic sensor devices
EP0691032A1 (en) * 1993-03-11 1996-01-10 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
US5903098A (en) * 1993-03-11 1999-05-11 Fed Corporation Field emission display device having multiplicity of through conductive vias and a backside connector
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
US5770350A (en) * 1993-11-09 1998-06-23 Lg Semicon Co. Ltd. Method for forming pattern using multilayer resist
JPH0817174B2 (ja) * 1993-11-10 1996-02-21 キヤノン販売株式会社 絶縁膜の改質方法
KR970009858B1 (ko) * 1994-01-12 1997-06-18 엘지반도체 주식회사 다층 레지스트 패턴 형성방법
US5583393A (en) * 1994-03-24 1996-12-10 Fed Corporation Selectively shaped field emission electron beam source, and phosphor array for use therewith
US5565384A (en) * 1994-04-28 1996-10-15 Texas Instruments Inc Self-aligned via using low permittivity dielectric
US5629583A (en) * 1994-07-25 1997-05-13 Fed Corporation Flat panel display assembly comprising photoformed spacer structure, and method of making the same
US5482894A (en) * 1994-08-23 1996-01-09 Texas Instruments Incorporated Method of fabricating a self-aligned contact using organic dielectric materials
DE4432294A1 (de) 1994-09-12 1996-03-14 Telefunken Microelectron Verfahren zur Reduzierung der Oberflächenrekombinationsgeschwindigkeit in Silizium
US5844351A (en) * 1995-08-24 1998-12-01 Fed Corporation Field emitter device, and veil process for THR fabrication thereof
US5828288A (en) * 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US5688158A (en) * 1995-08-24 1997-11-18 Fed Corporation Planarizing process for field emitter displays and other electron source applications
US5549786A (en) * 1995-08-29 1996-08-27 Advanced Micro Devices, Inc. Highly selective, highly uniform plasma etch process for spin-on glass
US6444564B1 (en) 1998-11-23 2002-09-03 Advanced Micro Devices, Inc. Method and product for improved use of low k dielectric material among integrated circuit interconnect structures
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
US6872506B2 (en) * 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
JP5368674B2 (ja) * 2003-10-15 2013-12-18 ブルーワー サイエンス アイ エヌ シー． 現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
EP2245512B1 (en) * 2008-01-29 2019-09-11 Brewer Science, Inc. On-track process for patterning hardmask by multiple dark field exposures
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
JPS57168247A (en) * 1981-04-09 1982-10-16 Fujitsu Ltd Formation of negative pattern
JPS5953841A (ja) * 1982-09-22 1984-03-28 Hitachi Ltd パタ−ン形成方法
US4560641A (en) * 1982-03-26 1985-12-24 Hitachi, Ltd. Method for forming fine multilayer resist patterns
JPS58165321A (ja) * 1982-03-26 1983-09-30 Hitachi Ltd パタ−ン形成方法

Also Published As

Publication number Publication date
KR880700319A (ko) 1988-02-22
JPH073578B2 (ja) 1995-01-18
ES8707022A1 (es) 1987-07-01
WO1986004695A1 (en) 1986-08-14
EP0211044A1 (en) 1987-02-25
KR930010222B1 (ko) 1993-10-15
US4683024A (en) 1987-07-28
EP0211044B1 (en) 1991-07-03
CA1298761C (en) 1992-04-14
JPS62501586A (ja) 1987-06-25

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20020506