GB1373718A - Non-crucible zone melting - Google Patents

Non-crucible zone melting

Info

Publication number
GB1373718A
GB1373718A GB335972A GB335972A GB1373718A GB 1373718 A GB1373718 A GB 1373718A GB 335972 A GB335972 A GB 335972A GB 335972 A GB335972 A GB 335972A GB 1373718 A GB1373718 A GB 1373718A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
tangent
angle
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB335972A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1373718A publication Critical patent/GB1373718A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB335972A 1971-03-22 1972-01-25 Non-crucible zone melting Expired GB1373718A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2113720A DE2113720C3 (de) 1971-03-22 1971-03-22 Verfahren zur Durchmesserregelung beim tiegellosen Zonenschmelzen von Halbleiterstäben

Publications (1)

Publication Number Publication Date
GB1373718A true GB1373718A (en) 1974-11-13

Family

ID=5802339

Family Applications (1)

Application Number Title Priority Date Filing Date
GB335972A Expired GB1373718A (en) 1971-03-22 1972-01-25 Non-crucible zone melting

Country Status (11)

Country Link
US (1) US3757071A (enExample)
JP (1) JPS5233042B1 (enExample)
BE (1) BE781067A (enExample)
CA (1) CA970255A (enExample)
CH (1) CH538885A (enExample)
DE (1) DE2113720C3 (enExample)
DK (1) DK140822B (enExample)
FR (1) FR2130453B1 (enExample)
GB (1) GB1373718A (enExample)
IT (1) IT962055B (enExample)
NL (1) NL7115341A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2332968C3 (de) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
US4185233A (en) * 1978-03-30 1980-01-22 General Electric Company High efficiency ballast system for gaseous discharge lamps
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPH0651599B2 (ja) * 1987-12-05 1994-07-06 信越半導体株式会社 浮遊帯域制御方法
IL163974A0 (en) * 2003-09-10 2005-12-18 Dana Corp Method for monitoring the performance of a magnetic pulse forming or welding process
DE102012108009B4 (de) * 2012-08-30 2016-09-01 Topsil Semiconductor Materials A/S Modellprädiktive Regelung des Zonenschmelz-Verfahrens
JP2014240338A (ja) * 2013-06-12 2014-12-25 信越半導体株式会社 半導体単結晶棒の製造方法
JP6642234B2 (ja) * 2016-04-20 2020-02-05 株式会社Sumco 単結晶の製造方法および装置

Also Published As

Publication number Publication date
US3757071A (en) 1973-09-04
DE2113720C3 (de) 1980-09-11
JPS5233042B1 (enExample) 1977-08-25
CH538885A (de) 1973-07-15
CA970255A (en) 1975-07-01
BE781067A (fr) 1972-07-17
NL7115341A (enExample) 1972-09-26
DK140822B (da) 1979-11-26
DE2113720A1 (de) 1972-09-28
DE2113720B2 (de) 1980-01-10
DK140822C (enExample) 1980-05-12
FR2130453B1 (enExample) 1975-04-11
IT962055B (it) 1973-12-20
FR2130453A1 (enExample) 1972-11-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee