GB1365159A - Semiconductor devices for integrated circuits - Google Patents

Semiconductor devices for integrated circuits

Info

Publication number
GB1365159A
GB1365159A GB3636771A GB3636771A GB1365159A GB 1365159 A GB1365159 A GB 1365159A GB 3636771 A GB3636771 A GB 3636771A GB 3636771 A GB3636771 A GB 3636771A GB 1365159 A GB1365159 A GB 1365159A
Authority
GB
United Kingdom
Prior art keywords
regions
layer
polycrystalline
pattern
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3636771A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1365159A publication Critical patent/GB1365159A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10W10/041—
    • H10W10/40—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
GB3636771A 1970-08-10 1971-08-03 Semiconductor devices for integrated circuits Expired GB1365159A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6243770A 1970-08-10 1970-08-10

Publications (1)

Publication Number Publication Date
GB1365159A true GB1365159A (en) 1974-08-29

Family

ID=22042478

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3636771A Expired GB1365159A (en) 1970-08-10 1971-08-03 Semiconductor devices for integrated circuits

Country Status (8)

Country Link
US (2) US3825451A (enExample)
JP (1) JPS5024231B1 (enExample)
BE (1) BE771137A (enExample)
CA (1) CA931665A (enExample)
DE (6) DE2140054A1 (enExample)
FR (1) FR2102152A1 (enExample)
GB (1) GB1365159A (enExample)
NL (1) NL7111014A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911559A (en) * 1973-12-10 1975-10-14 Texas Instruments Inc Method of dielectric isolation to provide backside collector contact and scribing yield
US4573257A (en) * 1984-09-14 1986-03-04 Motorola, Inc. Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key
US4583282A (en) * 1984-09-14 1986-04-22 Motorola, Inc. Process for self-aligned buried layer, field guard, and isolation
US4574469A (en) * 1984-09-14 1986-03-11 Motorola, Inc. Process for self-aligned buried layer, channel-stop, and isolation
JPS61166071A (ja) * 1985-01-17 1986-07-26 Toshiba Corp 半導体装置及びその製造方法
US7687887B1 (en) * 2006-12-01 2010-03-30 National Semiconductor Corporation Method of forming a self-aligned bipolar transistor structure using a selectively grown emitter
DE102007010563A1 (de) * 2007-02-22 2008-08-28 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Selektives Wachstum von polykristallinem siliziumhaltigen Halbleitermaterial auf siliziumhaltiger Halbleiteroberfläche

Also Published As

Publication number Publication date
FR2102152A1 (enExample) 1972-04-07
DE2140023A1 (de) 1972-02-17
DE7130637U (de) 1971-12-02
US3825451A (en) 1974-07-23
DE7130660U (de) 1971-12-02
JPS5024231B1 (enExample) 1975-08-14
NL7111014A (enExample) 1972-02-14
DE2140043A1 (de) 1972-02-17
DE2140012A1 (de) 1972-02-17
DE2140054A1 (de) 1972-02-17
BE771137A (fr) 1972-02-10
CA931665A (en) 1973-08-07
US3825450A (en) 1974-07-23

Similar Documents

Publication Publication Date Title
US3525025A (en) Electrically isolated semiconductor devices in integrated circuits
US3502951A (en) Monolithic complementary semiconductor device
US3508980A (en) Method of fabricating an integrated circuit structure with dielectric isolation
US4454647A (en) Isolation for high density integrated circuits
US3954523A (en) Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation
GB1144328A (en) Solid-state circuit consisting of a semiconductor body with active components, passive components, and conducting paths
GB1421212A (en) Semiconductor device manufacture
US3925120A (en) A method for manufacturing a semiconductor device having a buried epitaxial layer
GB1198569A (en) Semiconductor Junction Device.
GB1059739A (en) Semiconductor element and device and method fabricating the same
GB1452884A (en) Semiconductor devices
US4252581A (en) Selective epitaxy method for making filamentary pedestal transistor
GB1024359A (en) Semiconductor structures poviding both unipolar transistor and bipolar transistor functions and method of making same
GB1365159A (en) Semiconductor devices for integrated circuits
US3928091A (en) Method for manufacturing a semiconductor device utilizing selective oxidation
US3660732A (en) Semiconductor structure with dielectric and air isolation and method
GB1260977A (en) Improvements in semiconductor devices
GB1310412A (en) Semiconductor devices
GB1366892A (en) Methods of making semiconductor devices
GB1296562A (enExample)
US4546537A (en) Method for producing a semiconductor device utilizing V-groove etching and thermal oxidation
GB1279588A (en) Improvements in or relating to the production of insulated semi-conductor regions in a composite body
US3815223A (en) Method for making semiconductor structure with dielectric and air isolation
US3815222A (en) Semiconductor structure and method for lowering the collector resistance
US5065210A (en) Lateral transistor structure for bipolar semiconductor integrated circuits

Legal Events

Date Code Title Description
49R Reference inserted (sect. 9/1949)
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees