GB1358438A - Process for the manufacture of a semiconductor component or an integrated semiconductor circuit - Google Patents

Process for the manufacture of a semiconductor component or an integrated semiconductor circuit

Info

Publication number
GB1358438A
GB1358438A GB5585371A GB5585371A GB1358438A GB 1358438 A GB1358438 A GB 1358438A GB 5585371 A GB5585371 A GB 5585371A GB 5585371 A GB5585371 A GB 5585371A GB 1358438 A GB1358438 A GB 1358438A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
layer
mask
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5585371A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1358438A publication Critical patent/GB1358438A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
GB5585371A 1970-12-01 1971-12-01 Process for the manufacture of a semiconductor component or an integrated semiconductor circuit Expired GB1358438A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2059116A DE2059116C3 (de) 1970-12-01 1970-12-01 Verfahren zur Herstellung eines Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
GB1358438A true GB1358438A (en) 1974-07-03

Family

ID=5789659

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5585371A Expired GB1358438A (en) 1970-12-01 1971-12-01 Process for the manufacture of a semiconductor component or an integrated semiconductor circuit

Country Status (7)

Country Link
BE (1) BE775973A (enExample)
DE (1) DE2059116C3 (enExample)
FR (1) FR2116424A1 (enExample)
GB (1) GB1358438A (enExample)
IT (1) IT941388B (enExample)
LU (1) LU64363A1 (enExample)
NL (1) NL7115760A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395433A (en) 1979-11-22 1983-07-26 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having regions of different thermal conductivity
FR2522695A1 (fr) * 1982-01-12 1983-09-09 Rca Corp Procede pour tirer du silicium monocristallin sur une couche formant masque
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
GB2142185A (en) * 1983-06-22 1985-01-09 Rca Corp Mosfet fabrication method
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4704186A (en) * 1986-02-19 1987-11-03 Rca Corporation Recessed oxide method for making a silicon-on-insulator substrate
GB2228617A (en) * 1989-02-27 1990-08-29 Philips Electronic Associated A method of manufacturing a semiconductor device having a mesa structure
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5441012A (en) * 1990-09-21 1995-08-15 Anelva Corporation Thin film deposition method for wafer
US5690736A (en) * 1987-08-24 1997-11-25 Canon Kabushiki Kaisha Method of forming crystal

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284981A1 (fr) * 1974-09-10 1976-04-09 Radiotechnique Compelec Procede d'obtention d'un circuit integre semiconducteur

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395433A (en) 1979-11-22 1983-07-26 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having regions of different thermal conductivity
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
FR2522695A1 (fr) * 1982-01-12 1983-09-09 Rca Corp Procede pour tirer du silicium monocristallin sur une couche formant masque
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
GB2142185A (en) * 1983-06-22 1985-01-09 Rca Corp Mosfet fabrication method
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4704186A (en) * 1986-02-19 1987-11-03 Rca Corporation Recessed oxide method for making a silicon-on-insulator substrate
US5690736A (en) * 1987-08-24 1997-11-25 Canon Kabushiki Kaisha Method of forming crystal
GB2228617A (en) * 1989-02-27 1990-08-29 Philips Electronic Associated A method of manufacturing a semiconductor device having a mesa structure
US5441012A (en) * 1990-09-21 1995-08-15 Anelva Corporation Thin film deposition method for wafer

Also Published As

Publication number Publication date
BE775973A (fr) 1972-03-16
LU64363A1 (enExample) 1972-06-19
NL7115760A (enExample) 1972-06-05
FR2116424A1 (enExample) 1972-07-13
DE2059116B2 (de) 1974-04-25
IT941388B (it) 1973-03-01
DE2059116A1 (de) 1972-07-06
DE2059116C3 (de) 1974-11-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees