GB1358438A - Process for the manufacture of a semiconductor component or an integrated semiconductor circuit - Google Patents
Process for the manufacture of a semiconductor component or an integrated semiconductor circuitInfo
- Publication number
- GB1358438A GB1358438A GB5585371A GB5585371A GB1358438A GB 1358438 A GB1358438 A GB 1358438A GB 5585371 A GB5585371 A GB 5585371A GB 5585371 A GB5585371 A GB 5585371A GB 1358438 A GB1358438 A GB 1358438A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- layer
- mask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 3
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 1
- 239000000395 magnesium oxide Substances 0.000 abstract 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2059116A DE2059116C3 (de) | 1970-12-01 | 1970-12-01 | Verfahren zur Herstellung eines Halbleiterbauelementes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1358438A true GB1358438A (en) | 1974-07-03 |
Family
ID=5789659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5585371A Expired GB1358438A (en) | 1970-12-01 | 1971-12-01 | Process for the manufacture of a semiconductor component or an integrated semiconductor circuit |
Country Status (7)
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4395433A (en) | 1979-11-22 | 1983-07-26 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device having regions of different thermal conductivity |
| FR2522695A1 (fr) * | 1982-01-12 | 1983-09-09 | Rca Corp | Procede pour tirer du silicium monocristallin sur une couche formant masque |
| US4482422A (en) * | 1982-02-26 | 1984-11-13 | Rca Corporation | Method for growing a low defect monocrystalline layer on a mask |
| GB2142185A (en) * | 1983-06-22 | 1985-01-09 | Rca Corp | Mosfet fabrication method |
| US4549926A (en) * | 1982-01-12 | 1985-10-29 | Rca Corporation | Method for growing monocrystalline silicon on a mask layer |
| US4578142A (en) * | 1984-05-10 | 1986-03-25 | Rca Corporation | Method for growing monocrystalline silicon through mask layer |
| US4704186A (en) * | 1986-02-19 | 1987-11-03 | Rca Corporation | Recessed oxide method for making a silicon-on-insulator substrate |
| GB2228617A (en) * | 1989-02-27 | 1990-08-29 | Philips Electronic Associated | A method of manufacturing a semiconductor device having a mesa structure |
| US5273616A (en) * | 1980-04-10 | 1993-12-28 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| US5441012A (en) * | 1990-09-21 | 1995-08-15 | Anelva Corporation | Thin film deposition method for wafer |
| US5690736A (en) * | 1987-08-24 | 1997-11-25 | Canon Kabushiki Kaisha | Method of forming crystal |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2284981A1 (fr) * | 1974-09-10 | 1976-04-09 | Radiotechnique Compelec | Procede d'obtention d'un circuit integre semiconducteur |
-
1970
- 1970-12-01 DE DE2059116A patent/DE2059116C3/de not_active Expired
-
1971
- 1971-11-16 NL NL7115760A patent/NL7115760A/xx unknown
- 1971-11-26 IT IT31678/71A patent/IT941388B/it active
- 1971-11-29 BE BE775973A patent/BE775973A/xx unknown
- 1971-11-29 LU LU64363D patent/LU64363A1/xx unknown
- 1971-11-30 FR FR7142813A patent/FR2116424A1/fr not_active Withdrawn
- 1971-12-01 GB GB5585371A patent/GB1358438A/en not_active Expired
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4395433A (en) | 1979-11-22 | 1983-07-26 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device having regions of different thermal conductivity |
| US5273616A (en) * | 1980-04-10 | 1993-12-28 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| FR2522695A1 (fr) * | 1982-01-12 | 1983-09-09 | Rca Corp | Procede pour tirer du silicium monocristallin sur une couche formant masque |
| US4549926A (en) * | 1982-01-12 | 1985-10-29 | Rca Corporation | Method for growing monocrystalline silicon on a mask layer |
| US4482422A (en) * | 1982-02-26 | 1984-11-13 | Rca Corporation | Method for growing a low defect monocrystalline layer on a mask |
| GB2142185A (en) * | 1983-06-22 | 1985-01-09 | Rca Corp | Mosfet fabrication method |
| US4578142A (en) * | 1984-05-10 | 1986-03-25 | Rca Corporation | Method for growing monocrystalline silicon through mask layer |
| US4704186A (en) * | 1986-02-19 | 1987-11-03 | Rca Corporation | Recessed oxide method for making a silicon-on-insulator substrate |
| US5690736A (en) * | 1987-08-24 | 1997-11-25 | Canon Kabushiki Kaisha | Method of forming crystal |
| GB2228617A (en) * | 1989-02-27 | 1990-08-29 | Philips Electronic Associated | A method of manufacturing a semiconductor device having a mesa structure |
| US5441012A (en) * | 1990-09-21 | 1995-08-15 | Anelva Corporation | Thin film deposition method for wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7115760A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-06-05 |
| FR2116424A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-07-13 |
| BE775973A (fr) | 1972-03-16 |
| LU64363A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-06-19 |
| DE2059116B2 (de) | 1974-04-25 |
| DE2059116A1 (de) | 1972-07-06 |
| DE2059116C3 (de) | 1974-11-21 |
| IT941388B (it) | 1973-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |