BE775973A - Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice - Google Patents
Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductriceInfo
- Publication number
- BE775973A BE775973A BE775973A BE775973A BE775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A
- Authority
- BE
- Belgium
- Prior art keywords
- making
- insulating substrate
- partly covered
- semiconductor layer
- substrate partly
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2059116A DE2059116C3 (de) | 1970-12-01 | 1970-12-01 | Verfahren zur Herstellung eines Halbleiterbauelementes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE775973A true BE775973A (fr) | 1972-03-16 |
Family
ID=5789659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE775973A BE775973A (fr) | 1970-12-01 | 1971-11-29 | Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice |
Country Status (7)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2284981A1 (fr) * | 1974-09-10 | 1976-04-09 | Radiotechnique Compelec | Procede d'obtention d'un circuit integre semiconducteur |
| JPS5674921A (en) | 1979-11-22 | 1981-06-20 | Toshiba Corp | Manufacturing method of semiconductor and apparatus thereof |
| US5273616A (en) * | 1980-04-10 | 1993-12-28 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| IN157312B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1982-01-12 | 1986-03-01 | Rca Corp | |
| US4549926A (en) * | 1982-01-12 | 1985-10-29 | Rca Corporation | Method for growing monocrystalline silicon on a mask layer |
| US4482422A (en) * | 1982-02-26 | 1984-11-13 | Rca Corporation | Method for growing a low defect monocrystalline layer on a mask |
| GB2142185A (en) * | 1983-06-22 | 1985-01-09 | Rca Corp | Mosfet fabrication method |
| US4578142A (en) * | 1984-05-10 | 1986-03-25 | Rca Corporation | Method for growing monocrystalline silicon through mask layer |
| US4704186A (en) * | 1986-02-19 | 1987-11-03 | Rca Corporation | Recessed oxide method for making a silicon-on-insulator substrate |
| EP0307108A1 (en) * | 1987-08-24 | 1989-03-15 | Canon Kabushiki Kaisha | Method of forming crystal |
| GB2228617A (en) * | 1989-02-27 | 1990-08-29 | Philips Electronic Associated | A method of manufacturing a semiconductor device having a mesa structure |
| TW205603B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1990-09-21 | 1993-05-11 | Anelva Corp |
-
1970
- 1970-12-01 DE DE2059116A patent/DE2059116C3/de not_active Expired
-
1971
- 1971-11-16 NL NL7115760A patent/NL7115760A/xx unknown
- 1971-11-26 IT IT31678/71A patent/IT941388B/it active
- 1971-11-29 BE BE775973A patent/BE775973A/xx unknown
- 1971-11-29 LU LU64363D patent/LU64363A1/xx unknown
- 1971-11-30 FR FR7142813A patent/FR2116424A1/fr not_active Withdrawn
- 1971-12-01 GB GB5585371A patent/GB1358438A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1358438A (en) | 1974-07-03 |
| DE2059116A1 (de) | 1972-07-06 |
| DE2059116C3 (de) | 1974-11-21 |
| IT941388B (it) | 1973-03-01 |
| NL7115760A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-06-05 |
| LU64363A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-06-19 |
| DE2059116B2 (de) | 1974-04-25 |
| FR2116424A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| BE788374A (fr) | Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat | |
| BE792614A (fr) | Procede de realisation d'une couche d'oxyde sur un semi-conducteur | |
| AT294919B (de) | Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht | |
| BE775973A (fr) | Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice | |
| BE826941A (fr) | Procede pour deposer selectivement une couche de verre sur des dispositifs semi-conducteurs | |
| CA968674A (en) | Method of depositing an epitaxial semiconductor layer from the liquid phase | |
| BE831381A (fr) | Procede de dopage d'une couche de semi-conducteur | |
| IT973425B (it) | Procedimento e composizione per applicare un materiale conduttore su un sottostrato ad esempio per la produzione di microcircuiti elettronici | |
| BE791374A (fr) | Procede pour realiser un depot metallique a la surface d'un substrat | |
| IT970349B (it) | Procedimento per la realizzazione di un rivestimento stabilizzante e o isolante su superfici semicon duttrici | |
| BE859202A (fr) | Procede pour la formation d'une couche pourvue d'une structure sur un substrat | |
| KR780000506B1 (en) | Etching method of si3 n4 layer | |
| IT948377B (it) | Dispositivo di vaporizzazione per applicare uno strato metallico su un sostrato oblungo | |
| BE777392A (fr) | Procede de fabrication d'un composant a semiconducteurs | |
| FR2380636B1 (fr) | Procede pour former une couche electriquement isolante sur un substrat | |
| AU4801772A (en) | Thin layer semiconductor device | |
| BE782119A (fr) | Procede de fabrication de circuits en couche mince | |
| BE798391A (fr) | Procede pour la realisation sur un substrat d'une couche metallique suivant un dessin ou modele | |
| BE765972A (fr) | Procede de formation d'un depot conducteur sur un substrat | |
| BE794166A (fr) | Procede permettant la fabrication d'un dispositif comportant une couche constituant une resistance | |
| BE763769A (fr) | Procede pour realiser une couche isolante permettant d'etancheifier desconstructions | |
| IT972512B (it) | Processo automatico per selezio nare circuiti per il montaggio su chip lsi | |
| BE789587A (fr) | Procede permettant la metallisation d'un ecran muni d'une couche luminescente | |
| IT973476B (it) | Procedimento per produrre pavimenti omogenei su sottofond | |
| CA970257A (en) | Insulating layer on a semiconductor substrate |