GB1344399A - Measuring the charge density of an insulating layer on a semi conductor substrate - Google Patents
Measuring the charge density of an insulating layer on a semi conductor substrateInfo
- Publication number
- GB1344399A GB1344399A GB4127472A GB4127472A GB1344399A GB 1344399 A GB1344399 A GB 1344399A GB 4127472 A GB4127472 A GB 4127472A GB 4127472 A GB4127472 A GB 4127472A GB 1344399 A GB1344399 A GB 1344399A
- Authority
- GB
- United Kingdom
- Prior art keywords
- source
- charge density
- potential
- fet
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/316—Testing of analog circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20167771A | 1971-11-24 | 1971-11-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1344399A true GB1344399A (en) | 1974-01-23 |
Family
ID=22746824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4127472A Expired GB1344399A (en) | 1971-11-24 | 1972-09-06 | Measuring the charge density of an insulating layer on a semi conductor substrate |
Country Status (7)
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4223238A (en) * | 1978-08-17 | 1980-09-16 | Motorola, Inc. | Integrated circuit substrate charge pump |
US4237379A (en) * | 1979-06-22 | 1980-12-02 | Rca Corporation | Method for inspecting electrical devices |
JPS57186351A (en) * | 1981-05-12 | 1982-11-16 | Fujitsu Ltd | Semiconductor device |
US4435652A (en) | 1981-05-26 | 1984-03-06 | Honeywell, Inc. | Threshold voltage control network for integrated circuit field-effect trransistors |
US4567430A (en) * | 1981-09-08 | 1986-01-28 | Recognition Equipment Incorporated | Semiconductor device for automation of integrated photoarray characterization |
WO1988002123A1 (en) * | 1986-09-17 | 1988-03-24 | The General Electric Company, P.L.C. | Integrated circuits |
FR2617979B1 (fr) * | 1987-07-10 | 1989-11-10 | Thomson Semiconducteurs | Dispositif de detection de la depassivation d'un circuit integre |
US4942357A (en) * | 1989-08-07 | 1990-07-17 | Eastman Kodak Company | Method of testing a charge-coupled device |
CN115877164B (zh) * | 2023-03-03 | 2023-05-12 | 长鑫存储技术有限公司 | 可动离子电荷面密度的测试方法及装置、电子设备和介质 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648170A (en) * | 1969-08-08 | 1972-03-07 | Bell Telephone Labor Inc | Measurement of field effect transistor pinch-off voltage |
-
1971
- 1971-11-24 US US00201677A patent/US3750018A/en not_active Expired - Lifetime
-
1972
- 1972-09-06 GB GB4127472A patent/GB1344399A/en not_active Expired
- 1972-09-22 IT IT29530/72A patent/IT967703B/it active
- 1972-09-26 DE DE2247162A patent/DE2247162C3/de not_active Expired
- 1972-10-25 FR FR7238486A patent/FR2160829B1/fr not_active Expired
- 1972-10-27 JP JP47107277A patent/JPS5138223B2/ja not_active Expired
- 1972-11-14 CA CA156,422A patent/CA958074A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT967703B (it) | 1974-03-11 |
DE2247162B2 (de) | 1980-03-20 |
CA958074A (en) | 1974-11-19 |
DE2247162A1 (de) | 1973-05-30 |
FR2160829B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-04-23 |
JPS5138223B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-10-20 |
JPS4860877A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-08-25 |
DE2247162C3 (de) | 1980-10-30 |
FR2160829A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-07-06 |
US3750018A (en) | 1973-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1343038A (en) | Transistor integrated circuits | |
GB1396673A (en) | Stabilizing fet devices | |
JPS5457875A (en) | Semiconductor nonvolatile memory device | |
GB1457780A (en) | Semiconductor memory devices | |
GB1344399A (en) | Measuring the charge density of an insulating layer on a semi conductor substrate | |
SE7507147L (sv) | Felteffekttransistordon. | |
GB1148417A (en) | Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same | |
GB1078798A (en) | Improvements in or relating to field effect transistor devices | |
JPS56162875A (en) | Semiconductor device | |
US4081817A (en) | Semiconductor device | |
GB1476790A (en) | Semiconductor device including an insulated gate field effect transistor and method for its manufacture | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
US3816769A (en) | Method and circuit element for the selective charging of a semiconductor diffusion region | |
US3649385A (en) | Method of making a junction type field effect transistor | |
JPS5743455A (en) | Complementary type semiconductor device | |
GB1039416A (en) | Electronic signal translating circuits | |
JPS5670662A (en) | Insulated gate type field effect transistor | |
GB1135632A (en) | Improvements in and relating to semiconductor devices | |
JPS56105665A (en) | Semiconductor memory device | |
JPS6141153B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS5567160A (en) | Semiconductor memory storage | |
JPS5263686A (en) | Non-voltatile semiconductor memory device | |
JPS5736868A (en) | Manufacture of nonvolatile semiconductor memory device | |
JPS52149988A (en) | Semiconductor device | |
JPS57121271A (en) | Field effect transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |