DE2247162C3 - Verfahren zur Bestimmung der Ladungsdichte in einer Isolierschicht - Google Patents
Verfahren zur Bestimmung der Ladungsdichte in einer IsolierschichtInfo
- Publication number
- DE2247162C3 DE2247162C3 DE2247162A DE2247162A DE2247162C3 DE 2247162 C3 DE2247162 C3 DE 2247162C3 DE 2247162 A DE2247162 A DE 2247162A DE 2247162 A DE2247162 A DE 2247162A DE 2247162 C3 DE2247162 C3 DE 2247162C3
- Authority
- DE
- Germany
- Prior art keywords
- source
- voltage
- substrate
- insulating layer
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 26
- 230000005669 field effect Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/316—Testing of analog circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20167771A | 1971-11-24 | 1971-11-24 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE2247162A1 DE2247162A1 (de) | 1973-05-30 |
DE2247162B2 DE2247162B2 (de) | 1980-03-20 |
DE2247162C3 true DE2247162C3 (de) | 1980-10-30 |
Family
ID=22746824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2247162A Expired DE2247162C3 (de) | 1971-11-24 | 1972-09-26 | Verfahren zur Bestimmung der Ladungsdichte in einer Isolierschicht |
Country Status (7)
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4223238A (en) * | 1978-08-17 | 1980-09-16 | Motorola, Inc. | Integrated circuit substrate charge pump |
US4237379A (en) * | 1979-06-22 | 1980-12-02 | Rca Corporation | Method for inspecting electrical devices |
JPS57186351A (en) * | 1981-05-12 | 1982-11-16 | Fujitsu Ltd | Semiconductor device |
US4435652A (en) | 1981-05-26 | 1984-03-06 | Honeywell, Inc. | Threshold voltage control network for integrated circuit field-effect trransistors |
US4567430A (en) * | 1981-09-08 | 1986-01-28 | Recognition Equipment Incorporated | Semiconductor device for automation of integrated photoarray characterization |
WO1988002123A1 (en) * | 1986-09-17 | 1988-03-24 | The General Electric Company, P.L.C. | Integrated circuits |
FR2617979B1 (fr) * | 1987-07-10 | 1989-11-10 | Thomson Semiconducteurs | Dispositif de detection de la depassivation d'un circuit integre |
US4942357A (en) * | 1989-08-07 | 1990-07-17 | Eastman Kodak Company | Method of testing a charge-coupled device |
CN115877164B (zh) * | 2023-03-03 | 2023-05-12 | 长鑫存储技术有限公司 | 可动离子电荷面密度的测试方法及装置、电子设备和介质 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648170A (en) * | 1969-08-08 | 1972-03-07 | Bell Telephone Labor Inc | Measurement of field effect transistor pinch-off voltage |
-
1971
- 1971-11-24 US US00201677A patent/US3750018A/en not_active Expired - Lifetime
-
1972
- 1972-09-06 GB GB4127472A patent/GB1344399A/en not_active Expired
- 1972-09-22 IT IT29530/72A patent/IT967703B/it active
- 1972-09-26 DE DE2247162A patent/DE2247162C3/de not_active Expired
- 1972-10-25 FR FR7238486A patent/FR2160829B1/fr not_active Expired
- 1972-10-27 JP JP47107277A patent/JPS5138223B2/ja not_active Expired
- 1972-11-14 CA CA156,422A patent/CA958074A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT967703B (it) | 1974-03-11 |
DE2247162B2 (de) | 1980-03-20 |
CA958074A (en) | 1974-11-19 |
DE2247162A1 (de) | 1973-05-30 |
FR2160829B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-04-23 |
JPS5138223B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-10-20 |
JPS4860877A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-08-25 |
FR2160829A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-07-06 |
GB1344399A (en) | 1974-01-23 |
US3750018A (en) | 1973-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2854901C2 (de) | Integrierte Konstantspannungsgenerator-Schaltung | |
DE3024348C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
DE69832954T2 (de) | Temperaturmessschaltung | |
DE3135269C2 (de) | Halbleiteranordnung mit herabgesetzter Oberflächenfeldstärke | |
DE69203168T2 (de) | Schaltung zur Temperaturmessung. | |
DE2611338C3 (de) | Feldeffekttransistor mit sehr kurzer Kanallange | |
DE2951835C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
DE2526429A1 (de) | Duennfilmwiderstand | |
DE2242026A1 (de) | Mis-feldeffekttransistor | |
DE1464390B2 (de) | Feldeffekttransistor | |
DE2342637A1 (de) | Zenerdiode mit drei elektrischen anschlussbereichen | |
DE2238348B2 (de) | Operationsverstärker | |
DE1807857A1 (de) | Metall-Halbleitertransistor | |
DE2247162C3 (de) | Verfahren zur Bestimmung der Ladungsdichte in einer Isolierschicht | |
DE1564151C3 (de) | Verfahren zum Herstellen einer Vielzahl von Feldeffekt-Transistoren | |
DE2740203A1 (de) | Ladungsuebertragungsanordnung | |
DE19917370C1 (de) | In einer integrierten halbleiterschaltung gebildeter weitgehend spannungsunabhängiger elektrischer Widerstand | |
DE2727944C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
DE3230510C2 (de) | Variabler MIS-Widerstand | |
DE2635218A1 (de) | Anordnung zum schutz eines transistors | |
DE69610775T2 (de) | Geschalteter magnetfeldempfindlicher feldeffekttransistor | |
DE1762435B2 (de) | Hochverstaerkende integrierte verstarkerschaltung mit einem mos feldeffekttransistor | |
DE3879557T2 (de) | Halbleiteranordnung mit einer Ladungsübertragungsanordnung. | |
DE2520713A1 (de) | Sensorkreis | |
DE2416883A1 (de) | Isolierschicht-halbleiteranordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OD | Request for examination | ||
C3 | Grant after two publication steps (3rd publication) | ||
8339 | Ceased/non-payment of the annual fee |