DE69203168T2 - Schaltung zur Temperaturmessung. - Google Patents

Schaltung zur Temperaturmessung.

Info

Publication number
DE69203168T2
DE69203168T2 DE69203168T DE69203168T DE69203168T2 DE 69203168 T2 DE69203168 T2 DE 69203168T2 DE 69203168 T DE69203168 T DE 69203168T DE 69203168 T DE69203168 T DE 69203168T DE 69203168 T2 DE69203168 T2 DE 69203168T2
Authority
DE
Germany
Prior art keywords
circuit
temperature measurement
measurement
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69203168T
Other languages
English (en)
Other versions
DE69203168D1 (de
Inventor
Brendan Patrick Kelly
Royce Lowis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB919115677A external-priority patent/GB9115677D0/en
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69203168D1 publication Critical patent/DE69203168D1/de
Application granted granted Critical
Publication of DE69203168T2 publication Critical patent/DE69203168T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
DE69203168T 1991-07-19 1992-07-10 Schaltung zur Temperaturmessung. Expired - Fee Related DE69203168T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB919115677A GB9115677D0 (en) 1991-07-19 1991-07-19 A temperature sensing circuit
GB919123784A GB9123784D0 (en) 1991-07-19 1991-11-08 A temperature sensing circuit

Publications (2)

Publication Number Publication Date
DE69203168D1 DE69203168D1 (de) 1995-08-03
DE69203168T2 true DE69203168T2 (de) 1996-02-01

Family

ID=26299272

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69203168T Expired - Fee Related DE69203168T2 (de) 1991-07-19 1992-07-10 Schaltung zur Temperaturmessung.

Country Status (4)

Country Link
US (1) US5336943A (de)
EP (1) EP0523799B1 (de)
JP (1) JP3184850B2 (de)
DE (1) DE69203168T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0735351B1 (de) * 1995-03-29 2002-06-05 Infineon Technologies AG Schaltungsanordnung zum Erfassen der Temperatur eines Leistungs-Halbleiterbauelements
JPH09119870A (ja) * 1995-10-26 1997-05-06 Nec Corp 温度検出方法、半導体装置及び温度検出回路
US5838187A (en) * 1997-02-10 1998-11-17 Lucent Technologies Inc. Integrated circuit thermal shutdown system utilizing a thermal sensor
US6088208A (en) * 1997-03-31 2000-07-11 Matsushita Electronics Corporation Electronic device, electronic switching apparatus including the same, and production method thereof
GB9716838D0 (en) * 1997-08-08 1997-10-15 Philips Electronics Nv Temperature sensing circuits
GB9721908D0 (en) * 1997-10-17 1997-12-17 Philips Electronics Nv Voltage regulator circuits and semiconductor circuit devices
KR100259349B1 (ko) * 1997-12-27 2000-06-15 김영환 백바이어스 전압레벨 검출기
DE19836577C1 (de) * 1998-08-12 2000-04-20 Siemens Ag Leistungsschaltkreis mit verminderter Störstrahlung
GB9818044D0 (en) * 1998-08-20 1998-10-14 Koninkl Philips Electronics Nv Power transistor device
DE19841202C1 (de) 1998-09-09 2000-03-02 Siemens Ag Temperatursensor
JP3319406B2 (ja) * 1998-09-18 2002-09-03 日本電気株式会社 比較増幅検出回路
US6612737B1 (en) * 1999-12-29 2003-09-02 Affymetrix, Inc. System and method for self-calibrating measurement
DE10066032B4 (de) * 2000-07-28 2010-01-28 Infineon Technologies Ag Schaltungsanordnung zur Steuerung der Verstärkung einer Verstärkerschaltung
DE10038693C2 (de) * 2000-07-28 2002-10-24 Infineon Technologies Ag Temperatursensor
TWI245122B (en) * 2001-06-29 2005-12-11 Winbond Electronics Corp Temperature measurement method and device with voltage variation compensation
DE10204487B4 (de) * 2002-01-30 2004-03-04 Infineon Technologies Ag Temperatursensor
GB2425419B (en) * 2002-10-01 2007-05-02 Wolfson Microelectronics Plc Temperature sensing apparatus and methods
TW200500611A (en) * 2003-06-30 2005-01-01 Sunplus Technology Co Ltd Voltage detection apparatus
US7023244B2 (en) * 2004-06-24 2006-04-04 Faraday Technology Corp. Voltage detection circuit
US20060028257A1 (en) * 2004-08-03 2006-02-09 Hong Huang System and method for over-temperature protection sensing employing MOSFET on-resistance Rds_on
US7680622B2 (en) * 2005-04-13 2010-03-16 Freescale Semiconductor, Inc. Protection of an integrated circuit and method thereof
DE102006005033B4 (de) * 2006-02-03 2013-12-05 Infineon Technologies Ag Halbleiterbauelementanordnung mit einem Leistungstransistor und einer Temperaturmessanordnung
US7734440B2 (en) * 2007-10-31 2010-06-08 Agere Systems Inc. On-chip over-temperature detection
US8082796B1 (en) 2008-01-28 2011-12-27 Silicon Microstructures, Inc. Temperature extraction from a pressure sensor
JP5312982B2 (ja) * 2009-02-26 2013-10-09 ルネサスエレクトロニクス株式会社 Ｒｆ電力増幅回路およびそれを使用したｒｆパワーモジュール
US8848330B2 (en) * 2011-07-29 2014-09-30 Infineon Technologies Austria Ag Circuit with a temperature protected electronic switch
US20150346037A1 (en) * 2014-05-29 2015-12-03 Infineon Technologies Ag Integrated temperature sensor
US9816872B2 (en) 2014-06-09 2017-11-14 Qualcomm Incorporated Low power low cost temperature sensor
US10158356B2 (en) * 2016-09-06 2018-12-18 Infineon Technologies Austria Ag Switch device
US10302509B2 (en) * 2016-12-12 2019-05-28 Invecas, Inc. Temperature sensing for integrated circuits
DE102019107805A1 (de) * 2019-03-27 2020-10-01 Seg Automotive Germany Gmbh Verfahren zum Überwachen einer Lebensdauer einer Stromrichterschaltung einer elektrischen Maschine

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004462A (en) * 1974-06-07 1977-01-25 National Semiconductor Corporation Temperature transducer
US4071813A (en) * 1974-09-23 1978-01-31 National Semiconductor Corporation Temperature sensor
US4201947A (en) * 1978-02-10 1980-05-06 Rca Corporation Long-tailed-pair connections of MOSFET's operated in sub-threshold region
JPS57148221A (en) * 1981-03-10 1982-09-13 Citizen Watch Co Ltd Temperature detecting device
EP0161906A3 (de) * 1984-05-09 1989-04-05 COLE, Martin Terence Feststoff-Anemometer und -Temperaturdetektoren

Also Published As

Publication number Publication date
DE69203168D1 (de) 1995-08-03
EP0523799A1 (de) 1993-01-20
US5336943A (en) 1994-08-09
JP3184850B2 (ja) 2001-07-09
EP0523799B1 (de) 1995-06-28
JPH05187926A (ja) 1993-07-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8328 Change in the person/name/address of the agent

Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN

8339 Ceased/non-payment of the annual fee