GB1337283A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
GB1337283A
GB1337283A GB5944970A GB5944970A GB1337283A GB 1337283 A GB1337283 A GB 1337283A GB 5944970 A GB5944970 A GB 5944970A GB 5944970 A GB5944970 A GB 5944970A GB 1337283 A GB1337283 A GB 1337283A
Authority
GB
United Kingdom
Prior art keywords
silver
gold
layer
deposited
antimony
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5944970A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1337283A publication Critical patent/GB1337283A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H10W20/4435—Noble-metal alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding

Landscapes

  • Electrodes Of Semiconductors (AREA)
GB5944970A 1969-12-26 1970-12-15 Method of manufacturing a semiconductor device Expired GB1337283A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10441769 1969-12-26
JP441769 1969-12-26

Publications (1)

Publication Number Publication Date
GB1337283A true GB1337283A (en) 1973-11-14

Family

ID=26338176

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5944970A Expired GB1337283A (en) 1969-12-26 1970-12-15 Method of manufacturing a semiconductor device

Country Status (5)

Country Link
US (1) US3686698A (enExample)
DE (1) DE2062897A1 (enExample)
FR (1) FR2074233A5 (enExample)
GB (1) GB1337283A (enExample)
NL (1) NL7018311A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789498A (fr) * 1971-09-29 1973-01-15 Siemens Ag Contact metal-semiconducteur de faible superficie
DE2634263A1 (de) * 1976-07-30 1978-02-02 Licentia Gmbh Mehrschichtiger metallanschlusskontakt
DE2603745C3 (de) * 1976-01-31 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Mehrschichtiger Metallanschlußkontakt und Verfahren zu seiner Herstellung
DE3025859C2 (de) * 1980-07-08 1987-01-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer Elektrode auf einem Halbleiterkörper
JPS59213145A (ja) * 1983-05-18 1984-12-03 Toshiba Corp 半導体装置及びその製造方法
US4742023A (en) * 1986-08-28 1988-05-03 Fujitsu Limited Method for producing a semiconductor device
FR2606551B1 (fr) * 1986-11-07 1989-03-10 Arnaud D Avitaya Francois Procede de formation de contacts ohmiques sur du silicium
US4937672A (en) 1989-04-14 1990-06-26 Rca Licensing Corporation Audio switching for an audio/video system having S-VIDEO capability
DE68927931T2 (de) * 1989-07-26 1997-09-18 Ibm Verfahren zur Herstellung einer Packungsstruktur für einen integrierten Schaltungschip
US5244833A (en) * 1989-07-26 1993-09-14 International Business Machines Corporation Method for manufacturing an integrated circuit chip bump electrode using a polymer layer and a photoresist layer
US5349239A (en) * 1991-07-04 1994-09-20 Sharp Kabushiki Kaisha Vertical type construction transistor
US5411400A (en) * 1992-09-28 1995-05-02 Motorola, Inc. Interconnect system for a semiconductor chip and a substrate
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
US6100194A (en) * 1998-06-22 2000-08-08 Stmicroelectronics, Inc. Silver metallization by damascene method
JP2002124654A (ja) * 2000-10-13 2002-04-26 Mitsubishi Electric Corp 固体撮像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172829A (en) * 1961-01-24 1965-03-09 Of an alloy to a support
DE1263190B (de) * 1961-07-12 1968-03-14 Siemens Ag Halbleiteranordnung mit einem in ein Gehaeuse eingeschlossenen Halbleiterkoerper
DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
NL297607A (enExample) * 1962-09-07
GB1095047A (en) * 1964-09-09 1967-12-13 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
US3408271A (en) * 1965-03-01 1968-10-29 Hughes Aircraft Co Electrolytic plating of metal bump contacts to semiconductor devices upon nonconductive substrates
US3510734A (en) * 1967-10-18 1970-05-05 Hughes Aircraft Co Impatt diode
US3496428A (en) * 1968-04-11 1970-02-17 Itt Diffusion barrier for semiconductor contacts

Also Published As

Publication number Publication date
DE2062897A1 (de) 1971-07-15
NL7018311A (enExample) 1971-06-29
US3686698A (en) 1972-08-29
FR2074233A5 (enExample) 1971-10-01

Similar Documents

Publication Publication Date Title
GB1337283A (en) Method of manufacturing a semiconductor device
GB721671A (en) Signal translating devices utilizing semiconductive bodies and methods of making them
GB954478A (en) Semiconductor capacitor devices
GB1010192A (en) Improvements in or relating to semi-conductor devices
GB1023531A (en) Improvements in or relating to semiconductor devices
GB1445443A (en) Mesa type thyristor and method of making same
GB949646A (en) Improvements in or relating to semiconductor devices
GB1312510A (en) Method of manufacturing a multi-layer semiconductor device
GB1215539A (en) Hybrid junction semiconductor device and method of making the same
GB1303235A (enExample)
GB1020097A (en) Semiconductor switching device and method of manufacture
GB1268406A (en) Improvements in and relating to pressure sensitive semiconductor devices and method of manufacturing the same
GB1341124A (en) Semiconductor device
GB1063210A (en) Method of producing semiconductor devices
GB1260567A (en) Improvements in or relating to semiconductor devices
GB989205A (en) Improvements in or relating to semi-conductor structures
GB1197315A (en) Semiconductor Device
GB1110321A (en) Improvements in or relating to semiconductor devices
GB1172772A (en) Semiconductor Devices.
GB1031473A (en) Controlled rectifiers
GB1039257A (en) Semiconductor devices
GB1313386A (en) Ohmic contacts for semiconductor devices
GB1250584A (enExample)
GB927625A (en) Improvements in or relating to semi-conductor devices
GB1267044A (enExample)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee