FR2606551B1 - Procede de formation de contacts ohmiques sur du silicium - Google Patents

Procede de formation de contacts ohmiques sur du silicium

Info

Publication number
FR2606551B1
FR2606551B1 FR8616030A FR8616030A FR2606551B1 FR 2606551 B1 FR2606551 B1 FR 2606551B1 FR 8616030 A FR8616030 A FR 8616030A FR 8616030 A FR8616030 A FR 8616030A FR 2606551 B1 FR2606551 B1 FR 2606551B1
Authority
FR
France
Prior art keywords
silicon
ohmic contacts
forming ohmic
forming
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8616030A
Other languages
English (en)
Other versions
FR2606551A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHROBOCZEK JAN
Original Assignee
CHROBOCZEK JAN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHROBOCZEK JAN filed Critical CHROBOCZEK JAN
Priority to FR8616030A priority Critical patent/FR2606551B1/fr
Publication of FR2606551A1 publication Critical patent/FR2606551A1/fr
Application granted granted Critical
Publication of FR2606551B1 publication Critical patent/FR2606551B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
FR8616030A 1986-11-07 1986-11-07 Procede de formation de contacts ohmiques sur du silicium Expired FR2606551B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8616030A FR2606551B1 (fr) 1986-11-07 1986-11-07 Procede de formation de contacts ohmiques sur du silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8616030A FR2606551B1 (fr) 1986-11-07 1986-11-07 Procede de formation de contacts ohmiques sur du silicium

Publications (2)

Publication Number Publication Date
FR2606551A1 FR2606551A1 (fr) 1988-05-13
FR2606551B1 true FR2606551B1 (fr) 1989-03-10

Family

ID=9340927

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8616030A Expired FR2606551B1 (fr) 1986-11-07 1986-11-07 Procede de formation de contacts ohmiques sur du silicium

Country Status (1)

Country Link
FR (1) FR2606551B1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2767287A (en) * 1952-12-31 1956-10-16 Sprague Electric Co Electrode for crystalline negative resistance elements
NL94553C (fr) * 1954-12-28
NL245806A (fr) * 1959-01-17
DE1230919B (de) * 1965-07-17 1966-12-22 Telefunken Patent Verfahren zur sperrschichtfreien Kontaktierung von p-leitenden Zonen eines Halbleiterkoerpers mit einem Gold-Gallium-Lot
GB1337283A (en) * 1969-12-26 1973-11-14 Hitachi Ltd Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
FR2606551A1 (fr) 1988-05-13

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse