DE3780907D1 - Dotierter halbleiterdurchkontakt zum kontaktieren. - Google Patents
Dotierter halbleiterdurchkontakt zum kontaktieren.Info
- Publication number
- DE3780907D1 DE3780907D1 DE8787402316T DE3780907T DE3780907D1 DE 3780907 D1 DE3780907 D1 DE 3780907D1 DE 8787402316 T DE8787402316 T DE 8787402316T DE 3780907 T DE3780907 T DE 3780907T DE 3780907 D1 DE3780907 D1 DE 3780907D1
- Authority
- DE
- Germany
- Prior art keywords
- contact
- doped semiconductor
- semiconductor contact
- doped
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3146—Carbon layers, e.g. diamond-like layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/934—Sheet resistance, i.e. dopant parameters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/920,251 US4722913A (en) | 1986-10-17 | 1986-10-17 | Doped semiconductor vias to contacts |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3780907D1 true DE3780907D1 (de) | 1992-09-10 |
DE3780907T2 DE3780907T2 (de) | 1992-12-24 |
Family
ID=25443438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787402316T Expired - Fee Related DE3780907T2 (de) | 1986-10-17 | 1987-10-16 | Dotierter halbleiterdurchkontakt zum kontaktieren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4722913A (de) |
EP (1) | EP0265331B1 (de) |
JP (1) | JPS63120442A (de) |
KR (1) | KR960004589B1 (de) |
DE (1) | DE3780907T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972250A (en) * | 1987-03-02 | 1990-11-20 | Microwave Technology, Inc. | Protective coating useful as passivation layer for semiconductor devices |
US4843034A (en) * | 1987-06-12 | 1989-06-27 | Massachusetts Institute Of Technology | Fabrication of interlayer conductive paths in integrated circuits |
JPH07114237B2 (ja) * | 1987-08-26 | 1995-12-06 | 株式会社東芝 | 半導体装置 |
JP2546696B2 (ja) * | 1987-12-17 | 1996-10-23 | 富士通株式会社 | シリコン炭化層構造 |
EP0327336B1 (de) * | 1988-02-01 | 1997-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Elektronische Anordnungen mit Kohlenstoffschichten |
US5272361A (en) * | 1989-06-30 | 1993-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Field effect semiconductor device with immunity to hot carrier effects |
JPH03192754A (ja) * | 1989-12-22 | 1991-08-22 | Omron Corp | 半導体素子およびその製造方法 |
JPH05343350A (ja) * | 1992-06-08 | 1993-12-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5514902A (en) | 1993-09-16 | 1996-05-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having MOS transistor |
US6927826B2 (en) * | 1997-03-26 | 2005-08-09 | Semiconductor Energy Labaratory Co., Ltd. | Display device |
JPH10268360A (ja) | 1997-03-26 | 1998-10-09 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US6350672B1 (en) * | 1997-07-28 | 2002-02-26 | United Microelectronics Corp. | Interconnect structure with gas dielectric compatible with unlanded vias |
JPH11307782A (ja) | 1998-04-24 | 1999-11-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US6713234B2 (en) * | 1999-02-18 | 2004-03-30 | Micron Technology, Inc. | Fabrication of semiconductor devices using anti-reflective coatings |
US6475836B1 (en) * | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3922708A (en) * | 1974-03-04 | 1975-11-25 | Ibm | Method of producing high value ion implanted resistors |
US4214918A (en) * | 1978-10-12 | 1980-07-29 | Stanford University | Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam |
US4392298A (en) * | 1981-07-27 | 1983-07-12 | Bell Telephone Laboratories, Incorporated | Integrated circuit device connection process |
US4511445A (en) * | 1982-06-18 | 1985-04-16 | At&T Bell Laboratories | Process of enhancing conductivity of material |
US4472210A (en) * | 1983-01-07 | 1984-09-18 | Rca Corporation | Method of making a semiconductor device to improve conductivity of amorphous silicon films |
-
1986
- 1986-10-17 US US06/920,251 patent/US4722913A/en not_active Expired - Lifetime
-
1987
- 1987-10-16 JP JP62261530A patent/JPS63120442A/ja active Pending
- 1987-10-16 DE DE8787402316T patent/DE3780907T2/de not_active Expired - Fee Related
- 1987-10-16 KR KR1019870011470A patent/KR960004589B1/ko not_active IP Right Cessation
- 1987-10-16 EP EP87402316A patent/EP0265331B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR880005662A (ko) | 1988-06-29 |
KR960004589B1 (ko) | 1996-04-09 |
EP0265331A1 (de) | 1988-04-27 |
JPS63120442A (ja) | 1988-05-24 |
US4722913A (en) | 1988-02-02 |
DE3780907T2 (de) | 1992-12-24 |
EP0265331B1 (de) | 1992-08-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SGS-THOMSON MICROELECTRONICS INC. (N.D.GES.DES STA |
|
8339 | Ceased/non-payment of the annual fee |