DE3587451D1 - Halbleiteruebergitterstruktur. - Google Patents

Halbleiteruebergitterstruktur.

Info

Publication number
DE3587451D1
DE3587451D1 DE8585112133T DE3587451T DE3587451D1 DE 3587451 D1 DE3587451 D1 DE 3587451D1 DE 8585112133 T DE8585112133 T DE 8585112133T DE 3587451 T DE3587451 T DE 3587451T DE 3587451 D1 DE3587451 D1 DE 3587451D1
Authority
DE
Germany
Prior art keywords
transfer structure
semiconductor transfer
semiconductor
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585112133T
Other languages
English (en)
Other versions
DE3587451T2 (de
Inventor
Kentaro Onabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3587451D1 publication Critical patent/DE3587451D1/de
Publication of DE3587451T2 publication Critical patent/DE3587451T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/342—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing short period superlattices [SPS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biophysics (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE85112133T 1984-09-25 1985-09-24 Halbleiterübergitterstruktur. Expired - Fee Related DE3587451T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59200207A JPH0728080B2 (ja) 1984-09-25 1984-09-25 半導体超格子構造体

Publications (2)

Publication Number Publication Date
DE3587451D1 true DE3587451D1 (de) 1993-08-19
DE3587451T2 DE3587451T2 (de) 1994-01-20

Family

ID=16420584

Family Applications (1)

Application Number Title Priority Date Filing Date
DE85112133T Expired - Fee Related DE3587451T2 (de) 1984-09-25 1985-09-24 Halbleiterübergitterstruktur.

Country Status (4)

Country Link
US (1) US4675708A (de)
EP (1) EP0176087B1 (de)
JP (1) JPH0728080B2 (de)
DE (1) DE3587451T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136803A (ja) * 1984-12-07 1986-06-24 極東開発工業株式会社 塵芥収集車の押込機構
JPH0669109B2 (ja) * 1984-12-07 1994-08-31 シャ−プ株式会社 光半導体装置
JPS61210679A (ja) * 1985-03-15 1986-09-18 Sony Corp 半導体装置
JPS61244086A (ja) * 1985-04-22 1986-10-30 Sharp Corp 半導体レ−ザ素子
KR900002687B1 (ko) * 1985-12-16 1990-04-23 후지쓰가부시끼가이샤 Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법
JPS63153887A (ja) * 1986-08-08 1988-06-27 Sharp Corp 半導体レ−ザ素子
US4769341A (en) * 1986-12-29 1988-09-06 American Telephone And Telegraph Company, At&T Bell Laboratories Method of fabricating non-silicon materials on silicon substrate using an alloy of Sb and Group IV semiconductors
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
JP2612572B2 (ja) * 1987-04-14 1997-05-21 キヤノン株式会社 電子放出素子
US4980750A (en) * 1987-12-29 1990-12-25 Nec Corporation Semiconductor crystal
US4905056A (en) * 1988-09-30 1990-02-27 Berndt Dale F Superlattice precision voltage reference
WO1997040560A2 (en) * 1996-04-24 1997-10-30 Philips Electronics N.V. Radiation-emitting semiconductor diode, and method of manufacturing same
US6570179B1 (en) 1998-01-14 2003-05-27 Mp Technologies, Llc III-V semiconductors separate confinement superlattice optoelectronic devices
GB2344932A (en) 1998-12-15 2000-06-21 Sharp Kk Semiconductor Laser with gamma and X electron barriers
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
JPH0669109B2 (ja) * 1984-12-07 1994-08-31 シャ−プ株式会社 光半導体装置

Also Published As

Publication number Publication date
DE3587451T2 (de) 1994-01-20
US4675708A (en) 1987-06-23
JPS6178189A (ja) 1986-04-21
EP0176087A3 (en) 1988-06-01
EP0176087B1 (de) 1993-07-14
JPH0728080B2 (ja) 1995-03-29
EP0176087A2 (de) 1986-04-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee