GB1172772A - Semiconductor Devices. - Google Patents
Semiconductor Devices.Info
- Publication number
- GB1172772A GB1172772A GB33412/67A GB3341267A GB1172772A GB 1172772 A GB1172772 A GB 1172772A GB 33412/67 A GB33412/67 A GB 33412/67A GB 3341267 A GB3341267 A GB 3341267A GB 1172772 A GB1172772 A GB 1172772A
- Authority
- GB
- United Kingdom
- Prior art keywords
- exposed
- gold
- semi
- annulus
- perforations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,172,772. Semi-conductor devices. WESTINGHOUSE BRAKE ENGLISH ELECTRIC SEMI-CONDUCTORS Ltd. 10 July, 1968 [20 July, 1967], No. 33412/67. Heading H1K. In a multizone multi junction semi-conductor device an inner region is exposed through one or more perforations in an alloyed emitter zone, the exposed surface of the region being abraded. In an embodiment, a regularly perforated goldantimony annulus is alloyed to one surface of a silicon wafer already containing two parallel junctions. The surface exposed through the perforations is sand-blasted to enhance the carrier recombination rate and successive layers of nickel and gold then vapour deposited over the annulus (with the rest of the body waxmasked). The nickel-gold layer is then sintered at a temperature of less than 450 C. in a hydrogen atmosphere to increase its adhesion to the body. The layer makes ohmic contact to both the gold-antimony electrode and the exposed surface.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB33412/67A GB1172772A (en) | 1967-07-20 | 1967-07-20 | Semiconductor Devices. |
NL6809885A NL6809885A (en) | 1967-07-20 | 1968-07-12 | |
DE1764663A DE1764663B2 (en) | 1967-07-20 | 1968-07-13 | Method for manufacturing a semiconductor component |
US744660A US3633271A (en) | 1967-07-20 | 1968-07-15 | Semiconductor devices |
FR1574472D FR1574472A (en) | 1967-07-20 | 1968-07-17 | |
AT699268A AT281121B (en) | 1967-07-20 | 1968-07-19 | A method of manufacturing a multi-zone and multi-junction semiconductor device |
CH1083268A CH497047A (en) | 1967-07-20 | 1968-07-19 | Method for producing a semiconductor device having a plurality of zones and a plurality of pn junctions |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB33412/67A GB1172772A (en) | 1967-07-20 | 1967-07-20 | Semiconductor Devices. |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1172772A true GB1172772A (en) | 1969-12-03 |
Family
ID=10352623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB33412/67A Expired GB1172772A (en) | 1967-07-20 | 1967-07-20 | Semiconductor Devices. |
Country Status (7)
Country | Link |
---|---|
US (1) | US3633271A (en) |
AT (1) | AT281121B (en) |
CH (1) | CH497047A (en) |
DE (1) | DE1764663B2 (en) |
FR (1) | FR1574472A (en) |
GB (1) | GB1172772A (en) |
NL (1) | NL6809885A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE759754A (en) * | 1969-12-02 | 1971-05-17 | Licentia Gmbh | THYRISTOR WITH SHORT-CIRCUIT TRANSMITTER ON ONE OF THE MAIN FACES BUT THYRISTOR DISC AND THYRISTOR PRODUCTION PROCESS |
US3964090A (en) * | 1971-12-24 | 1976-06-15 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. | Semiconductor controlled rectifier |
FR2268355B1 (en) * | 1974-04-16 | 1978-01-20 | Thomson Csf |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2973569A (en) * | 1953-06-26 | 1961-03-07 | Sylvania Electric Prod | Semiconductor assembly methods |
US3336160A (en) * | 1963-11-06 | 1967-08-15 | Gen Motors Corp | Method of making contacts on semiconductors |
DE1239778B (en) * | 1963-11-16 | 1967-05-03 | Siemens Ag | Switchable semiconductor component of the pnpn type |
-
1967
- 1967-07-20 GB GB33412/67A patent/GB1172772A/en not_active Expired
-
1968
- 1968-07-12 NL NL6809885A patent/NL6809885A/xx unknown
- 1968-07-13 DE DE1764663A patent/DE1764663B2/en not_active Withdrawn
- 1968-07-15 US US744660A patent/US3633271A/en not_active Expired - Lifetime
- 1968-07-17 FR FR1574472D patent/FR1574472A/fr not_active Expired
- 1968-07-19 CH CH1083268A patent/CH497047A/en not_active IP Right Cessation
- 1968-07-19 AT AT699268A patent/AT281121B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR1574472A (en) | 1969-07-11 |
AT281121B (en) | 1970-05-11 |
CH497047A (en) | 1970-09-30 |
NL6809885A (en) | 1969-01-22 |
DE1764663A1 (en) | 1971-10-07 |
DE1764663B2 (en) | 1978-05-18 |
US3633271A (en) | 1972-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |