DE2062897A1 - Halbleitervorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE2062897A1
DE2062897A1 DE19702062897 DE2062897A DE2062897A1 DE 2062897 A1 DE2062897 A1 DE 2062897A1 DE 19702062897 DE19702062897 DE 19702062897 DE 2062897 A DE2062897 A DE 2062897A DE 2062897 A1 DE2062897 A1 DE 2062897A1
Authority
DE
Germany
Prior art keywords
semiconductor
alloy
contact
gold
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702062897
Other languages
German (de)
English (en)
Inventor
Kenji Kokubunji Miyamoto Nonmasa Kodaira Tokio Akeyama (Japan) M
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2062897A1 publication Critical patent/DE2062897A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53247—Noble-metal alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13021—Disposition the bump connector being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19702062897 1969-12-26 1970-12-21 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Pending DE2062897A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP441769 1969-12-26
JP10441769 1969-12-26

Publications (1)

Publication Number Publication Date
DE2062897A1 true DE2062897A1 (de) 1971-07-15

Family

ID=26338176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702062897 Pending DE2062897A1 (de) 1969-12-26 1970-12-21 Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (1) US3686698A (enExample)
DE (1) DE2062897A1 (enExample)
FR (1) FR2074233A5 (enExample)
GB (1) GB1337283A (enExample)
NL (1) NL7018311A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2603745A1 (de) * 1976-01-31 1977-08-11 Licentia Gmbh Mehrschichtiger metallanschlusskontakt
DE2634263A1 (de) * 1976-07-30 1978-02-02 Licentia Gmbh Mehrschichtiger metallanschlusskontakt
DE3025859A1 (de) * 1980-07-08 1982-01-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufbringen einer metallschicht auf einen halbleiterkoerper

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789498A (fr) * 1971-09-29 1973-01-15 Siemens Ag Contact metal-semiconducteur de faible superficie
JPS59213145A (ja) * 1983-05-18 1984-12-03 Toshiba Corp 半導体装置及びその製造方法
US4742023A (en) * 1986-08-28 1988-05-03 Fujitsu Limited Method for producing a semiconductor device
FR2606551B1 (fr) * 1986-11-07 1989-03-10 Arnaud D Avitaya Francois Procede de formation de contacts ohmiques sur du silicium
US4937672A (en) 1989-04-14 1990-06-26 Rca Licensing Corporation Audio switching for an audio/video system having S-VIDEO capability
EP0411165B1 (en) * 1989-07-26 1997-04-02 International Business Machines Corporation Method of forming of an integrated circuit chip packaging structure
US5244833A (en) * 1989-07-26 1993-09-14 International Business Machines Corporation Method for manufacturing an integrated circuit chip bump electrode using a polymer layer and a photoresist layer
US5349239A (en) * 1991-07-04 1994-09-20 Sharp Kabushiki Kaisha Vertical type construction transistor
US5411400A (en) * 1992-09-28 1995-05-02 Motorola, Inc. Interconnect system for a semiconductor chip and a substrate
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
US6100194A (en) * 1998-06-22 2000-08-08 Stmicroelectronics, Inc. Silver metallization by damascene method
JP2002124654A (ja) * 2000-10-13 2002-04-26 Mitsubishi Electric Corp 固体撮像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172829A (en) * 1961-01-24 1965-03-09 Of an alloy to a support
DE1263190B (de) * 1961-07-12 1968-03-14 Siemens Ag Halbleiteranordnung mit einem in ein Gehaeuse eingeschlossenen Halbleiterkoerper
DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
NL297607A (enExample) * 1962-09-07
GB1095047A (en) * 1964-09-09 1967-12-13 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
US3408271A (en) * 1965-03-01 1968-10-29 Hughes Aircraft Co Electrolytic plating of metal bump contacts to semiconductor devices upon nonconductive substrates
US3510734A (en) * 1967-10-18 1970-05-05 Hughes Aircraft Co Impatt diode
US3496428A (en) * 1968-04-11 1970-02-17 Itt Diffusion barrier for semiconductor contacts

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2603745A1 (de) * 1976-01-31 1977-08-11 Licentia Gmbh Mehrschichtiger metallanschlusskontakt
DE2634263A1 (de) * 1976-07-30 1978-02-02 Licentia Gmbh Mehrschichtiger metallanschlusskontakt
DE3025859A1 (de) * 1980-07-08 1982-01-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufbringen einer metallschicht auf einen halbleiterkoerper

Also Published As

Publication number Publication date
GB1337283A (en) 1973-11-14
NL7018311A (enExample) 1971-06-29
US3686698A (en) 1972-08-29
FR2074233A5 (enExample) 1971-10-01

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Legal Events

Date Code Title Description
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