GB1250584A - - Google Patents
Info
- Publication number
- GB1250584A GB1250584A GB1250584DA GB1250584A GB 1250584 A GB1250584 A GB 1250584A GB 1250584D A GB1250584D A GB 1250584DA GB 1250584 A GB1250584 A GB 1250584A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- nickel
- phosphorus
- conductivity type
- nickel layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Weting (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681816084 DE1816084C3 (de) | 1968-12-20 | Verfahren zum Herstellen eines aus Silicium bestehenden Halbleiterbauelements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1250584A true GB1250584A (enExample) | 1971-10-20 |
Family
ID=5716947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1250584D Expired GB1250584A (enExample) | 1968-12-20 | 1969-12-19 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3713913A (enExample) |
| AT (1) | AT308200B (enExample) |
| CH (1) | CH509665A (enExample) |
| FR (1) | FR2026657A1 (enExample) |
| GB (1) | GB1250584A (enExample) |
| NL (1) | NL6918857A (enExample) |
| SE (1) | SE344848B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5062385A (enExample) * | 1973-10-02 | 1975-05-28 | ||
| US4233093A (en) * | 1979-04-12 | 1980-11-11 | Pel Chow | Process for the manufacture of PNP transistors high power |
-
1969
- 1969-12-12 US US00884617A patent/US3713913A/en not_active Expired - Lifetime
- 1969-12-16 CH CH1869769A patent/CH509665A/de not_active IP Right Cessation
- 1969-12-16 NL NL6918857A patent/NL6918857A/xx unknown
- 1969-12-17 FR FR6943693A patent/FR2026657A1/fr not_active Withdrawn
- 1969-12-18 AT AT1180369A patent/AT308200B/de not_active IP Right Cessation
- 1969-12-19 GB GB1250584D patent/GB1250584A/en not_active Expired
- 1969-12-22 SE SE17796/69A patent/SE344848B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2026657A1 (enExample) | 1970-09-18 |
| NL6918857A (enExample) | 1970-06-23 |
| SE344848B (enExample) | 1972-05-02 |
| CH509665A (de) | 1971-06-30 |
| DE1816084A1 (de) | 1970-06-25 |
| US3713913A (en) | 1973-01-30 |
| AT308200B (de) | 1973-06-25 |
| DE1816084B2 (de) | 1976-08-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |