GB1334835A - Complementary insulated gate field effect transistor integrated circuits - Google Patents
Complementary insulated gate field effect transistor integrated circuitsInfo
- Publication number
- GB1334835A GB1334835A GB2815872A GB2815872A GB1334835A GB 1334835 A GB1334835 A GB 1334835A GB 2815872 A GB2815872 A GB 2815872A GB 2815872 A GB2815872 A GB 2815872A GB 1334835 A GB1334835 A GB 1334835A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gate electrode
- integrated circuits
- complementary
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15589871A | 1971-06-23 | 1971-06-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1334835A true GB1334835A (en) | 1973-10-24 |
Family
ID=22557218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2815872A Expired GB1334835A (en) | 1971-06-23 | 1972-06-15 | Complementary insulated gate field effect transistor integrated circuits |
Country Status (9)
| Country | Link |
|---|---|
| AU (1) | AU459158B2 (enExample) |
| BE (1) | BE785149A (enExample) |
| DE (1) | DE2230344A1 (enExample) |
| FR (1) | FR2147940B1 (enExample) |
| GB (1) | GB1334835A (enExample) |
| IT (1) | IT956336B (enExample) |
| MY (1) | MY7400255A (enExample) |
| NL (1) | NL7208568A (enExample) |
| SE (1) | SE383445B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944862A (ja) * | 1982-09-07 | 1984-03-13 | Toshiba Corp | 半導体装置 |
-
1972
- 1972-06-07 IT IT25371/72A patent/IT956336B/it active
- 1972-06-15 GB GB2815872A patent/GB1334835A/en not_active Expired
- 1972-06-16 AU AU43506/72A patent/AU459158B2/en not_active Expired
- 1972-06-20 BE BE785149A patent/BE785149A/xx unknown
- 1972-06-20 FR FR7222197A patent/FR2147940B1/fr not_active Expired
- 1972-06-21 DE DE2230344A patent/DE2230344A1/de active Pending
- 1972-06-21 SE SE7208214A patent/SE383445B/xx unknown
- 1972-06-22 NL NL7208568A patent/NL7208568A/xx unknown
-
1974
- 1974-12-30 MY MY255/74A patent/MY7400255A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7208568A (enExample) | 1972-12-28 |
| BE785149A (fr) | 1972-10-16 |
| SE383445B (sv) | 1976-03-08 |
| FR2147940B1 (enExample) | 1977-07-22 |
| AU4350672A (en) | 1973-12-20 |
| IT956336B (it) | 1973-10-10 |
| FR2147940A1 (enExample) | 1973-03-11 |
| DE2230344A1 (de) | 1973-01-11 |
| MY7400255A (en) | 1974-12-31 |
| AU459158B2 (en) | 1975-02-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |