MY7400255A - Complementary insulated gate field effect transistor integrated circuit - Google Patents

Complementary insulated gate field effect transistor integrated circuit

Info

Publication number
MY7400255A
MY7400255A MY255/74A MY7400255A MY7400255A MY 7400255 A MY7400255 A MY 7400255A MY 255/74 A MY255/74 A MY 255/74A MY 7400255 A MY7400255 A MY 7400255A MY 7400255 A MY7400255 A MY 7400255A
Authority
MY
Malaysia
Prior art keywords
integrated circuit
field effect
effect transistor
insulated gate
gate field
Prior art date
Application number
MY255/74A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of MY7400255A publication Critical patent/MY7400255A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
MY255/74A 1971-06-23 1974-12-30 Complementary insulated gate field effect transistor integrated circuit MY7400255A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15589871A 1971-06-23 1971-06-23

Publications (1)

Publication Number Publication Date
MY7400255A true MY7400255A (en) 1974-12-31

Family

ID=22557218

Family Applications (1)

Application Number Title Priority Date Filing Date
MY255/74A MY7400255A (en) 1971-06-23 1974-12-30 Complementary insulated gate field effect transistor integrated circuit

Country Status (9)

Country Link
AU (1) AU459158B2 (enExample)
BE (1) BE785149A (enExample)
DE (1) DE2230344A1 (enExample)
FR (1) FR2147940B1 (enExample)
GB (1) GB1334835A (enExample)
IT (1) IT956336B (enExample)
MY (1) MY7400255A (enExample)
NL (1) NL7208568A (enExample)
SE (1) SE383445B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944862A (ja) * 1982-09-07 1984-03-13 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
NL7208568A (enExample) 1972-12-28
BE785149A (fr) 1972-10-16
SE383445B (sv) 1976-03-08
FR2147940B1 (enExample) 1977-07-22
AU4350672A (en) 1973-12-20
IT956336B (it) 1973-10-10
FR2147940A1 (enExample) 1973-03-11
DE2230344A1 (de) 1973-01-11
GB1334835A (en) 1973-10-24
AU459158B2 (en) 1975-02-27

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