GB1310806A - Transistors - Google Patents

Transistors

Info

Publication number
GB1310806A
GB1310806A GB2481871*A GB2481871A GB1310806A GB 1310806 A GB1310806 A GB 1310806A GB 2481871 A GB2481871 A GB 2481871A GB 1310806 A GB1310806 A GB 1310806A
Authority
GB
United Kingdom
Prior art keywords
emitter
electrode
region
base
alloyed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2481871*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1310806A publication Critical patent/GB1310806A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
GB2481871*A 1970-03-19 1971-04-19 Transistors Expired GB1310806A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702013220 DE2013220A1 (de) 1970-03-19 1970-03-19 Verfahren zum Herstellen einer Transistor anordnung aus Silicium

Publications (1)

Publication Number Publication Date
GB1310806A true GB1310806A (en) 1973-03-21

Family

ID=5765627

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2481871*A Expired GB1310806A (en) 1970-03-19 1971-04-19 Transistors

Country Status (8)

Country Link
US (1) US3754321A (enExample)
AT (1) AT312054B (enExample)
CH (1) CH522954A (enExample)
DE (1) DE2013220A1 (enExample)
FR (1) FR2083421B1 (enExample)
GB (1) GB1310806A (enExample)
NL (1) NL7103588A (enExample)
SE (1) SE378154B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999318A (en) * 1986-11-12 1991-03-12 Hitachi, Ltd. Method for forming metal layer interconnects using stepped via walls

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
ES374318A1 (es) * 1968-12-10 1972-03-16 Matsushita Electronics Corp Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.

Also Published As

Publication number Publication date
AT312054B (de) 1973-12-10
US3754321A (en) 1973-08-28
NL7103588A (enExample) 1971-09-21
FR2083421A1 (enExample) 1971-12-17
DE2013220A1 (de) 1971-11-25
SE378154B (enExample) 1975-08-18
FR2083421B1 (enExample) 1977-01-21
CH522954A (de) 1972-05-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees