GB849447A - Improvements in or relating to semi-conductor devices and processes for their manufacture - Google Patents
Improvements in or relating to semi-conductor devices and processes for their manufactureInfo
- Publication number
- GB849447A GB849447A GB955557A GB955557A GB849447A GB 849447 A GB849447 A GB 849447A GB 955557 A GB955557 A GB 955557A GB 955557 A GB955557 A GB 955557A GB 849447 A GB849447 A GB 849447A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wires
- semi
- coated
- crystal
- march
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
849,447. Semi-conductor devices. SIEMENS & HALSKE A. G. March 22, 1957 [March 23, 1956], No. 9555/57. Class 37 A semi-conductor device comprises a plurality of electrodes produced by alloying sets of wires to the surface of the crystal each set comprising a plurality of wires coated with the same material, the material of at least one set differing from that of the other set(s). Fig. 1 shows a molybdenum wire 3 coated with gold and antimony and a molybdenum wire 4 coated with indium wound around two spaced conducting rods 1 and 2. Fig. 2 shows the assembly after these wires have been alloyed to the surface of an N-type germanium or silicon crystal 5, the wires being cut so that rod 2 and wires 3 constitute an emitter electrode and rod I and wires 4 the base electrode. The collector electrode may be produced on the same or opposite surface of the crystal by the same process to form a transistor. A hook collector or drift transistor may be provided by using donor and acceptor materials with different diffusion coefficients and concentrations. Tungsten wires, and silver coatings may be used for the electrodes, and the alloying process may be applied simultaneously to a plurality of crystals placed between the wires.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES48077A DE1207507B (en) | 1956-03-23 | 1956-03-23 | Process for the production of a planar alloy transistor consisting of germanium or silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB849447A true GB849447A (en) | 1960-09-28 |
Family
ID=37198682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB955557A Expired GB849447A (en) | 1956-03-23 | 1957-03-22 | Improvements in or relating to semi-conductor devices and processes for their manufacture |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH348208A (en) |
| DE (1) | DE1207507B (en) |
| FR (1) | FR1166785A (en) |
| GB (1) | GB849447A (en) |
| NL (1) | NL215555A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8288192B2 (en) | 2008-05-02 | 2012-10-16 | Canon Kabushiki Kaisha | Method of manufacturing a capacitive electromechanical transducer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1279199C2 (en) * | 1961-12-15 | 1975-08-07 | Semikron, Gesellschaft für Gleichrichterbau und Elektronik mbH, 8500 Nürnberg | METHOD FOR PRODUCING A LARGER NUMBER OF SEMICONDUCTOR RECTIFIER ARRANGEMENTS AT THE SAME TIME |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE137800C (en) * | ||||
| BE500302A (en) * | 1949-11-30 | |||
| AT181629B (en) * | 1950-09-14 | 1955-04-12 | Western Electric Co | Device for signal conversion with a body made of semiconducting material and method for producing the same |
| BE525387A (en) * | 1952-12-29 | 1900-01-01 |
-
0
- NL NL215555D patent/NL215555A/xx unknown
-
1956
- 1956-03-23 DE DES48077A patent/DE1207507B/en active Granted
-
1957
- 1957-02-15 FR FR1166785D patent/FR1166785A/en not_active Expired
- 1957-03-19 CH CH348208D patent/CH348208A/en unknown
- 1957-03-22 GB GB955557A patent/GB849447A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8288192B2 (en) | 2008-05-02 | 2012-10-16 | Canon Kabushiki Kaisha | Method of manufacturing a capacitive electromechanical transducer |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1207507B (en) | 1965-12-23 |
| DE1207507C2 (en) | 1966-07-14 |
| NL215555A (en) | |
| CH348208A (en) | 1960-08-15 |
| FR1166785A (en) | 1958-11-14 |
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