FR2083421A1 - - Google Patents

Info

Publication number
FR2083421A1
FR2083421A1 FR7109677A FR7109677A FR2083421A1 FR 2083421 A1 FR2083421 A1 FR 2083421A1 FR 7109677 A FR7109677 A FR 7109677A FR 7109677 A FR7109677 A FR 7109677A FR 2083421 A1 FR2083421 A1 FR 2083421A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7109677A
Other languages
French (fr)
Other versions
FR2083421B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2083421A1 publication Critical patent/FR2083421A1/fr
Application granted granted Critical
Publication of FR2083421B1 publication Critical patent/FR2083421B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7109677A 1970-03-19 1971-03-19 Expired FR2083421B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702013220 DE2013220A1 (de) 1970-03-19 1970-03-19 Verfahren zum Herstellen einer Transistor anordnung aus Silicium

Publications (2)

Publication Number Publication Date
FR2083421A1 true FR2083421A1 (enExample) 1971-12-17
FR2083421B1 FR2083421B1 (enExample) 1977-01-21

Family

ID=5765627

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7109677A Expired FR2083421B1 (enExample) 1970-03-19 1971-03-19

Country Status (8)

Country Link
US (1) US3754321A (enExample)
AT (1) AT312054B (enExample)
CH (1) CH522954A (enExample)
DE (1) DE2013220A1 (enExample)
FR (1) FR2083421B1 (enExample)
GB (1) GB1310806A (enExample)
NL (1) NL7103588A (enExample)
SE (1) SE378154B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999318A (en) * 1986-11-12 1991-03-12 Hitachi, Ltd. Method for forming metal layer interconnects using stepped via walls

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1942374A1 (de) * 1968-08-20 1970-02-26 Hewlett Packard Co Verfahren zur Schaffung Ohmscher Kontakte an verschiedenen Zonen einer Halbleiterscheibe

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
ES374318A1 (es) * 1968-12-10 1972-03-16 Matsushita Electronics Corp Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1942374A1 (de) * 1968-08-20 1970-02-26 Hewlett Packard Co Verfahren zur Schaffung Ohmscher Kontakte an verschiedenen Zonen einer Halbleiterscheibe

Also Published As

Publication number Publication date
FR2083421B1 (enExample) 1977-01-21
AT312054B (de) 1973-12-10
US3754321A (en) 1973-08-28
GB1310806A (en) 1973-03-21
CH522954A (de) 1972-05-15
DE2013220A1 (de) 1971-11-25
NL7103588A (enExample) 1971-09-21
SE378154B (enExample) 1975-08-18

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Legal Events

Date Code Title Description
ST Notification of lapse