GB1300186A - Method for passivating mesa pn junction structures - Google Patents
Method for passivating mesa pn junction structuresInfo
- Publication number
- GB1300186A GB1300186A GB29961/71A GB2996171A GB1300186A GB 1300186 A GB1300186 A GB 1300186A GB 29961/71 A GB29961/71 A GB 29961/71A GB 2996171 A GB2996171 A GB 2996171A GB 1300186 A GB1300186 A GB 1300186A
- Authority
- GB
- United Kingdom
- Prior art keywords
- mesa
- silicon
- layer
- silicon nitride
- passivating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5717870A | 1970-07-22 | 1970-07-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1300186A true GB1300186A (en) | 1972-12-20 |
Family
ID=22008987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB29961/71A Expired GB1300186A (en) | 1970-07-22 | 1971-06-25 | Method for passivating mesa pn junction structures |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE770277A (enExample) |
| DE (1) | DE2136239A1 (enExample) |
| FR (1) | FR2099527B1 (enExample) |
| GB (1) | GB1300186A (enExample) |
| NL (1) | NL7110058A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2119568A (en) * | 1982-04-26 | 1983-11-16 | Raytheon Co | Method of forming a protective layer in a semiconductor structure |
| GB2192093A (en) * | 1986-06-17 | 1987-12-31 | Plessey Co Plc | A local oxidation of silicon process |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2466859A1 (fr) * | 1979-10-05 | 1981-04-10 | Thomson Csf | Procede de sillonnage et de glassivation par masquage au nitrure de silicium et composants semi-conducteurs obtenus |
-
1971
- 1971-06-25 GB GB29961/71A patent/GB1300186A/en not_active Expired
- 1971-07-20 DE DE19712136239 patent/DE2136239A1/de active Pending
- 1971-07-20 BE BE770277A patent/BE770277A/xx unknown
- 1971-07-21 NL NL7110058A patent/NL7110058A/xx unknown
- 1971-07-22 FR FR7126923A patent/FR2099527B1/fr not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2119568A (en) * | 1982-04-26 | 1983-11-16 | Raytheon Co | Method of forming a protective layer in a semiconductor structure |
| GB2192093A (en) * | 1986-06-17 | 1987-12-31 | Plessey Co Plc | A local oxidation of silicon process |
| GB2192093B (en) * | 1986-06-17 | 1989-12-13 | Plessey Co Plc | A local oxidation of silicon process |
Also Published As
| Publication number | Publication date |
|---|---|
| BE770277A (fr) | 1972-01-20 |
| FR2099527A1 (enExample) | 1972-03-17 |
| FR2099527B1 (enExample) | 1974-04-05 |
| NL7110058A (enExample) | 1972-01-25 |
| DE2136239A1 (de) | 1972-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |