GB1225088A - - Google Patents

Info

Publication number
GB1225088A
GB1225088A GB1225088DA GB1225088A GB 1225088 A GB1225088 A GB 1225088A GB 1225088D A GB1225088D A GB 1225088DA GB 1225088 A GB1225088 A GB 1225088A
Authority
GB
United Kingdom
Prior art keywords
layer
plate
thick
regions
normally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1225088A publication Critical patent/GB1225088A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Silicon Compounds (AREA)
  • Thyristors (AREA)
GB1225088D 1968-10-17 1969-10-16 Expired GB1225088A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681803489 DE1803489A1 (de) 1968-10-17 1968-10-17 Verfahren zum Herstellen eines Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
GB1225088A true GB1225088A (enExample) 1971-03-17

Family

ID=5710695

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1225088D Expired GB1225088A (enExample) 1968-10-17 1969-10-16

Country Status (7)

Country Link
US (1) US3665594A (enExample)
JP (1) JPS4839866B1 (enExample)
CH (1) CH498490A (enExample)
DE (1) DE1803489A1 (enExample)
FR (1) FR2020901B1 (enExample)
GB (1) GB1225088A (enExample)
SE (1) SE341950B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886583A (en) * 1971-07-01 1975-05-27 Motorola Inc Insulated gate-field-effect transistor
FR2159632A5 (enExample) * 1971-11-05 1973-06-22 Thomson Csf
JPS532189U (enExample) * 1976-06-23 1978-01-10
JPS5322669U (enExample) * 1976-08-05 1978-02-25
JPS5946415B2 (ja) * 1978-04-28 1984-11-12 株式会社日立製作所 半導体装置の製造方法
US4293587A (en) * 1978-11-09 1981-10-06 Zilog, Inc. Low resistance backside preparation for semiconductor integrated circuit chips
US4278195A (en) * 1978-12-01 1981-07-14 Honeywell Inc. Method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel and apparatus using such _a bonding technique
NL8004139A (nl) * 1980-07-18 1982-02-16 Philips Nv Halfgeleiderinrichting.
IT1210953B (it) * 1982-11-19 1989-09-29 Ates Componenti Elettron Metodo per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile.
EP0381411A3 (en) * 1989-02-01 1992-03-11 Plessey Semiconductors Limited Methods of joining components
US5178319A (en) * 1991-04-02 1993-01-12 At&T Bell Laboratories Compression bonding methods
CA2210063A1 (en) * 1997-07-08 1999-01-08 Ibm Canada Limited-Ibm Canada Limitee Method of manufacturing wire segments of homogeneous composition
KR100499722B1 (ko) * 2000-02-29 2005-07-07 오므론 가부시키가이샤 칩형 반도체 소자
SE520148C3 (sv) * 2000-11-24 2003-07-16 Sandvik Ab Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
FR1258010A (fr) * 1959-06-30 1961-04-07 Fairchild Semiconductor Procédé de fabrication de transistors
US3196330A (en) * 1960-06-10 1965-07-20 Gen Electric Semiconductor devices and methods of making same
NL275554A (enExample) * 1961-04-19 1900-01-01
US3330030A (en) * 1961-09-29 1967-07-11 Texas Instruments Inc Method of making semiconductor devices
FR1396813A (fr) * 1963-05-29 1965-04-23 Siemens Ag Procédé de fabrication d'un dispositif électrique semi-conducteur
US3375143A (en) * 1964-09-29 1968-03-26 Melpar Inc Method of making tunnel diode
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3461462A (en) * 1965-12-02 1969-08-12 United Aircraft Corp Method for bonding silicon semiconductor devices
US3537174A (en) * 1968-10-07 1970-11-03 Gen Electric Process for forming tungsten barrier electrical connection

Also Published As

Publication number Publication date
DE1803489A1 (de) 1970-05-27
CH498490A (de) 1970-10-31
FR2020901B1 (enExample) 1974-02-22
SE341950B (enExample) 1972-01-17
JPS4839866B1 (enExample) 1973-11-27
US3665594A (en) 1972-05-30
FR2020901A1 (enExample) 1970-07-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees