GB942232A - Improvements in semi-conductor devices - Google Patents

Improvements in semi-conductor devices

Info

Publication number
GB942232A
GB942232A GB5266/62A GB526662A GB942232A GB 942232 A GB942232 A GB 942232A GB 5266/62 A GB5266/62 A GB 5266/62A GB 526662 A GB526662 A GB 526662A GB 942232 A GB942232 A GB 942232A
Authority
GB
United Kingdom
Prior art keywords
semi
spacers
conductor
solder
supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5266/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB942232A publication Critical patent/GB942232A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
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    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
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    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

942,232. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Feb. 12, 1962 [Feb. 15, 1961], No. 5266/62. Heading H1K. In a semi-conductor device a semi-conductor body 6, Fig. 5, is secured to a current supply member 1 by a layer of solder 10 the spacing between the semi-conductor body and the supply member being determined by spacing members 16 provided in the layer of solder. The spacers may be of molybdenum, iron, silicon, germanium, or ceramic material in the form of pellets, or wire formed, e.g. into an annulus or U-shape, or a number of wires may be employed and they may be welded to the current supply members, alternatively the spacers may be formed by cold working the supply electrode surface. If the material of the spacers is soluble in solder the spacers may be plated, e.g. by silver plating. The spacers may be provided between the semi-conductor material and all its supply members as in Fig. 15. The spacers allow the solder to absorb stresses due to differences in thermal expansion of the semi-conductor and the supply electrode.
GB5266/62A 1961-02-15 1962-02-12 Improvements in semi-conductor devices Expired GB942232A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP26593A DE1226715B (en) 1961-02-15 1961-02-15 Semiconductor component with a surface-like semiconductor element soldered to power supply lines and method for its manufacture

Publications (1)

Publication Number Publication Date
GB942232A true GB942232A (en) 1963-11-20

Family

ID=7370506

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5266/62A Expired GB942232A (en) 1961-02-15 1962-02-12 Improvements in semi-conductor devices

Country Status (3)

Country Link
DE (1) DE1226715B (en)
GB (1) GB942232A (en)
NL (1) NL274757A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106488663A (en) * 2015-08-31 2017-03-08 英飞凌科技股份有限公司 Using spacing keeper, the first weldment is welded on the method on the second weldment

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2228703A1 (en) * 1972-06-13 1974-01-10 Licentia Gmbh PROCESS FOR MANUFACTURING A SPECIFIED SOLDER THICKNESS IN THE MANUFACTURING OF SEMI-CONDUCTOR COMPONENTS
FR2452786A1 (en) * 1979-03-30 1980-10-24 Silicium Semiconducteur Ssc Power semiconductor heat sink soldering system - with thin layer preventing adherence of solder applied to semiconductor perimeter
DE19546285A1 (en) * 1995-12-12 1997-06-19 Telefunken Microelectron Electronic module with circuit on substrate surface
DE102013110812B3 (en) 2013-09-30 2014-10-09 Semikron Elektronik Gmbh & Co. Kg A method for producing a further developed shaped metal body and method for producing a power semiconductor device with a solder joint using this further formed metal moldings.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL85899C (en) * 1950-10-06
NL269872A (en) * 1954-12-16 1900-01-01
FR1172000A (en) * 1955-08-10 1959-02-04 Ibm Junction semiconductor structure
FR1213484A (en) * 1958-08-04 1960-04-01 Thomson Houston Comp Francaise Non-isotropic conductive medium for intense heat flow

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106488663A (en) * 2015-08-31 2017-03-08 英飞凌科技股份有限公司 Using spacing keeper, the first weldment is welded on the method on the second weldment
CN106488663B (en) * 2015-08-31 2019-08-23 英飞凌科技股份有限公司 The method being welded on the first weldment using spacing retainer on the second weldment

Also Published As

Publication number Publication date
NL274757A (en) 1900-01-01
DE1226715B (en) 1966-10-13

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