GB926482A - Improvements in or relating to methods of manufacturing semi-conductive devices - Google Patents

Improvements in or relating to methods of manufacturing semi-conductive devices

Info

Publication number
GB926482A
GB926482A GB26025/59A GB2602559A GB926482A GB 926482 A GB926482 A GB 926482A GB 26025/59 A GB26025/59 A GB 26025/59A GB 2602559 A GB2602559 A GB 2602559A GB 926482 A GB926482 A GB 926482A
Authority
GB
United Kingdom
Prior art keywords
aluminium
wire
indium
wafer
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26025/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB926482A publication Critical patent/GB926482A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/915—Amphoteric doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Processing (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Wire Bonding (AREA)

Abstract

926,482. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. July 29, 1959 [Aug. 1, 1958], No. 26025/59. Class 37. A method of making a semi-conductor device comprises alloying an aluminium free metal to a germanium body and subsequently immersing an aluminium or aluminium-containing member in the aluminium free metal while it is molten and reheating the assembly to mix the aluminium with said metal. In one embodiment a pellet 6 of indium containing 0.5% by weight of gallium is alloyed to N-type germanium wafer 3 in the graphite jig 1, 4, by heating at 500‹ C. in hydrogen for 10 minutes in the presence of a trace of hydrogen chloride. After an aluminium wire has been inserted in the molten indium the heating cycle is repeated to form a PN junction. The wire is cut off after cooling and a transistor formed from the body by soldering a gold-coated molybdenum plate to the other face of the wafer with indium to form a second PN junction and soldering nickel strips to the indium pellet and the main part of the wafer. As an alternative, connection to the indium pellet is made by immersing a nickel wire in it with the aluminium wire, the wire being held in position if desired by a guide plug fitting in the jig. A further alternative is to use a nickel, tungsten, or molybdenum wire coated with aluminium, or with a coil of aluminium wound about its lower end, instead of the plain aluminium wire. Specification 803,017 is referred to.
GB26025/59A 1958-08-01 1959-07-29 Improvements in or relating to methods of manufacturing semi-conductive devices Expired GB926482A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL230165 1958-08-01

Publications (1)

Publication Number Publication Date
GB926482A true GB926482A (en) 1963-05-22

Family

ID=19751298

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26025/59A Expired GB926482A (en) 1958-08-01 1959-07-29 Improvements in or relating to methods of manufacturing semi-conductive devices

Country Status (6)

Country Link
US (1) US3181226A (en)
CH (1) CH374428A (en)
DE (1) DE1103468B (en)
FR (1) FR1231538A (en)
GB (1) GB926482A (en)
NL (2) NL230165A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3154437A (en) * 1961-01-17 1964-10-27 Philco Corp Method for introducing an activator impurity substance into a portion of a body of crystalline semiconductive material and for bonding a lead member to said portion
NL283969A (en) * 1961-10-09
JP6108164B2 (en) * 2012-11-07 2017-04-05 日本電産株式会社 Solder joint structure and solder joint method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT181629B (en) * 1950-09-14 1955-04-12 Western Electric Co Device for signal conversion with a body made of semiconducting material and method for producing the same
NL92060C (en) * 1953-10-26
US2918719A (en) * 1953-12-30 1959-12-29 Rca Corp Semi-conductor devices and methods of making them
BE537167A (en) * 1954-04-07
US2788432A (en) * 1955-05-19 1957-04-09 Hughes Aircraft Co Continuous fusion furnace
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
US2833678A (en) * 1955-09-27 1958-05-06 Rca Corp Methods of surface alloying with aluminum-containing solder
US2862840A (en) * 1956-09-26 1958-12-02 Gen Electric Semiconductor devices
DE1073110B (en) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Process for the production of rectifying or ohmic connection contacts on silicon carbide bodies
NL113333C (en) * 1957-09-19
US2947925A (en) * 1958-02-21 1960-08-02 Motorola Inc Transistor and method of making the same

Also Published As

Publication number Publication date
US3181226A (en) 1965-05-04
DE1103468B (en) 1961-03-30
NL230165A (en) 1900-01-01
NL110945C (en) 1900-01-01
CH374428A (en) 1964-01-15
FR1231538A (en) 1960-09-29

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