FR1231538A - Process for the manufacture of semiconductor devices with electrodes containing aluminum - Google Patents

Process for the manufacture of semiconductor devices with electrodes containing aluminum

Info

Publication number
FR1231538A
FR1231538A FR801644A FR801644A FR1231538A FR 1231538 A FR1231538 A FR 1231538A FR 801644 A FR801644 A FR 801644A FR 801644 A FR801644 A FR 801644A FR 1231538 A FR1231538 A FR 1231538A
Authority
FR
France
Prior art keywords
manufacture
semiconductor devices
containing aluminum
electrodes containing
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR801644A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1231538A publication Critical patent/FR1231538A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/915—Amphoteric doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Wire Processing (AREA)
  • Wire Bonding (AREA)
FR801644A 1958-08-01 1959-07-31 Process for the manufacture of semiconductor devices with electrodes containing aluminum Expired FR1231538A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL230165 1958-08-01

Publications (1)

Publication Number Publication Date
FR1231538A true FR1231538A (en) 1960-09-29

Family

ID=19751298

Family Applications (1)

Application Number Title Priority Date Filing Date
FR801644A Expired FR1231538A (en) 1958-08-01 1959-07-31 Process for the manufacture of semiconductor devices with electrodes containing aluminum

Country Status (6)

Country Link
US (1) US3181226A (en)
CH (1) CH374428A (en)
DE (1) DE1103468B (en)
FR (1) FR1231538A (en)
GB (1) GB926482A (en)
NL (2) NL230165A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3154437A (en) * 1961-01-17 1964-10-27 Philco Corp Method for introducing an activator impurity substance into a portion of a body of crystalline semiconductive material and for bonding a lead member to said portion
DE1180852B (en) * 1961-10-09 1964-11-05 Siemens Ag Method for the production of semiconductor arrangements with at least one pn junction produced by alloying

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6108164B2 (en) * 2012-11-07 2017-04-05 日本電産株式会社 Solder joint structure and solder joint method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT181629B (en) * 1950-09-14 1955-04-12 Western Electric Co Device for signal conversion with a body made of semiconducting material and method for producing the same
NL191674A (en) * 1953-10-26
US2918719A (en) * 1953-12-30 1959-12-29 Rca Corp Semi-conductor devices and methods of making them
BE537167A (en) * 1954-04-07
US2788432A (en) * 1955-05-19 1957-04-09 Hughes Aircraft Co Continuous fusion furnace
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
US2833678A (en) * 1955-09-27 1958-05-06 Rca Corp Methods of surface alloying with aluminum-containing solder
US2862840A (en) * 1956-09-26 1958-12-02 Gen Electric Semiconductor devices
DE1073110B (en) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Process for the production of rectifying or ohmic connection contacts on silicon carbide bodies
NL113333C (en) * 1957-09-19
US2947925A (en) * 1958-02-21 1960-08-02 Motorola Inc Transistor and method of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3154437A (en) * 1961-01-17 1964-10-27 Philco Corp Method for introducing an activator impurity substance into a portion of a body of crystalline semiconductive material and for bonding a lead member to said portion
DE1180852B (en) * 1961-10-09 1964-11-05 Siemens Ag Method for the production of semiconductor arrangements with at least one pn junction produced by alloying

Also Published As

Publication number Publication date
NL230165A (en) 1900-01-01
DE1103468B (en) 1961-03-30
CH374428A (en) 1964-01-15
US3181226A (en) 1965-05-04
GB926482A (en) 1963-05-22
NL110945C (en) 1900-01-01

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