GB1174613A - Metallic Connection Layers on Semiconductor Components - Google Patents

Metallic Connection Layers on Semiconductor Components

Info

Publication number
GB1174613A
GB1174613A GB03037/67A GB1303767A GB1174613A GB 1174613 A GB1174613 A GB 1174613A GB 03037/67 A GB03037/67 A GB 03037/67A GB 1303767 A GB1303767 A GB 1303767A GB 1174613 A GB1174613 A GB 1174613A
Authority
GB
United Kingdom
Prior art keywords
layer
deposition
semi
layers
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB03037/67A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1174613A publication Critical patent/GB1174613A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
GB03037/67A 1966-03-19 1967-03-20 Metallic Connection Layers on Semiconductor Components Expired GB1174613A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES102622A DE1283970B (de) 1966-03-19 1966-03-19 Metallischer Kontakt an einem Halbleiterbauelement

Publications (1)

Publication Number Publication Date
GB1174613A true GB1174613A (en) 1969-12-17

Family

ID=7524571

Family Applications (1)

Application Number Title Priority Date Filing Date
GB03037/67A Expired GB1174613A (en) 1966-03-19 1967-03-20 Metallic Connection Layers on Semiconductor Components

Country Status (8)

Country Link
US (1) US3633076A (https=)
BE (1) BE694479A (https=)
CH (1) CH457627A (https=)
DE (1) DE1283970B (https=)
FR (1) FR1515415A (https=)
GB (1) GB1174613A (https=)
NL (1) NL6702273A (https=)
SE (1) SE312864B (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263381A (en) * 1968-05-17 1972-02-09 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
CH497792A (de) * 1968-06-28 1970-10-15 Ibm Verfahren zur Herstellung von Halbleitervorrichtungen
BE763522A (fr) * 1970-03-03 1971-07-16 Licentia Gmbh Serie de couches de contact pour des elements de construction semi-conducteurs
US3769688A (en) * 1972-04-21 1973-11-06 Rca Corp Method of making an electrically-insulating seal between a metal body and a semiconductor device
JPS5745061B2 (https=) * 1972-05-02 1982-09-25
US4106860A (en) * 1973-09-07 1978-08-15 Bbc Brown Boveri & Company Limited Liquid-crystal cell
JPS5341064B2 (https=) * 1974-02-25 1978-10-31
US4096510A (en) * 1974-08-19 1978-06-20 Matsushita Electric Industrial Co., Ltd. Thermal printing head
JPS5341066B2 (https=) * 1974-09-24 1978-10-31
JPS51142988A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Semiconductor devices
US4042951A (en) * 1975-09-25 1977-08-16 Texas Instruments Incorporated Gold-germanium alloy contacts for a semiconductor device
US4065588A (en) * 1975-11-20 1977-12-27 Rca Corporation Method of making gold-cobalt contact for silicon devices
DE2807350C2 (de) * 1977-03-02 1983-01-13 Sharp K.K., Osaka Flüssigkristall-Anzeigevorrichtung in Baueinheit mit einem integrierten Schaltkreis
FR2431900A1 (fr) * 1978-07-25 1980-02-22 Thomson Csf Systeme de soudure d'un laser a semiconducteur sur un socle metallique
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
DE2926785C2 (de) * 1979-07-03 1985-12-12 HIGRATHERM electric GmbH, 7100 Heilbronn Bipolarer Transistor und Verfahren zu seiner Herstellung
NL8004139A (nl) * 1980-07-18 1982-02-16 Philips Nv Halfgeleiderinrichting.
DE3039658A1 (de) * 1980-10-21 1982-05-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Mit edelmetall beschichtetes molybdaen und verfahren zu seiner herstellung
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
US4482913A (en) * 1982-02-24 1984-11-13 Westinghouse Electric Corp. Semiconductor device soldered to a graphite substrate
JPS60119777A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
US4736236A (en) * 1984-03-08 1988-04-05 Olin Corporation Tape bonding material and structure for electronic circuit fabrication
US4737839A (en) * 1984-03-19 1988-04-12 Trilogy Computer Development Partners, Ltd. Semiconductor chip mounting system
DE3781861T2 (de) * 1986-10-27 1993-04-01 Electric Power Res Inst Herstellung einer mehrschichtigen leistungshalbleiterschaltung mit mehrfachen parallelen kontaktfingern.
US4974056A (en) * 1987-05-22 1990-11-27 International Business Machines Corporation Stacked metal silicide gate structure with barrier
US5367195A (en) * 1993-01-08 1994-11-22 International Business Machines Corporation Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
US5503286A (en) * 1994-06-28 1996-04-02 International Business Machines Corporation Electroplated solder terminal
US6897141B2 (en) * 2002-10-23 2005-05-24 Ocube Digital Co., Ltd. Solder terminal and fabricating method thereof
US9093385B2 (en) * 2013-05-28 2015-07-28 Infineon Technologies Ag Method for processing a semiconductor workpiece with metallization

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
FR1246813A (fr) * 1959-10-10 1960-11-25 Perfectionnements à la fabrication des éléments semi-conducteurs
BE637621A (https=) * 1962-05-25 1900-01-01
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
NL134170C (https=) * 1963-12-17 1900-01-01
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making
GB1104804A (en) * 1964-04-28 1968-02-28 Texas Instruments Inc Improvements relating to semiconductor devices
US3341753A (en) * 1964-10-21 1967-09-12 Texas Instruments Inc Metallic contacts for semiconductor devices

Also Published As

Publication number Publication date
CH457627A (de) 1968-06-15
FR1515415A (fr) 1968-03-01
DE1283970B (de) 1968-11-28
BE694479A (https=) 1967-07-31
SE312864B (https=) 1969-07-28
US3633076A (en) 1972-01-04
NL6702273A (https=) 1967-09-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees