GB1254362A - A method of providing ohmic contacts on gallium arsenide - Google Patents
A method of providing ohmic contacts on gallium arsenideInfo
- Publication number
- GB1254362A GB1254362A GB38730/69A GB3873069A GB1254362A GB 1254362 A GB1254362 A GB 1254362A GB 38730/69 A GB38730/69 A GB 38730/69A GB 3873069 A GB3873069 A GB 3873069A GB 1254362 A GB1254362 A GB 1254362A
- Authority
- GB
- United Kingdom
- Prior art keywords
- arsenic
- gallium arsenide
- contact material
- contact
- vapour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Abstract
1,254,362. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. 29 July, 1970 [1 Aug., 1969], No. 38730/69. Heading H1K. An ohmic contact is made to a gallium arsenide body by depositing a contact material on the body, and subsequently alloying it to the body in the presence of arsenic vapour. An inert or reducing gas, e.g. hydrogen, may also be present, the arsenic vapour being provided from an arsenic metal source heated to between 350 and 400 C. The alloying process may take place at 610 C., in not more than five minutes. The contact material may be a layer of tin followed by a layer of silver, both deposited by evaporation at a pressure of less than 10<SP>-5</SP> torr, or by sputtering. The body may be thoroughly cleaned prior to contact material deposition. The device, which may be a Gunn-effect oscillator, may be bonded at one contact to a copper heat sink, again in the presence of arsenic vapour.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB38730/69A GB1254362A (en) | 1969-08-01 | 1969-08-01 | A method of providing ohmic contacts on gallium arsenide |
US43871A US3647536A (en) | 1969-08-01 | 1970-06-05 | Ohmic contacts for gallium arsenide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB38730/69A GB1254362A (en) | 1969-08-01 | 1969-08-01 | A method of providing ohmic contacts on gallium arsenide |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1254362A true GB1254362A (en) | 1971-11-24 |
Family
ID=10405339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB38730/69A Expired GB1254362A (en) | 1969-08-01 | 1969-08-01 | A method of providing ohmic contacts on gallium arsenide |
Country Status (2)
Country | Link |
---|---|
US (1) | US3647536A (en) |
GB (1) | GB1254362A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3890455A (en) * | 1972-06-23 | 1975-06-17 | Ibm | Method of electrolessly plating alloys |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2995475A (en) * | 1958-11-04 | 1961-08-08 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
US3127285A (en) * | 1961-02-21 | 1964-03-31 | Vapor condensation doping method |
-
1969
- 1969-08-01 GB GB38730/69A patent/GB1254362A/en not_active Expired
-
1970
- 1970-06-05 US US43871A patent/US3647536A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3647536A (en) | 1972-03-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1297467A (en) | ||
GB1174613A (en) | Metallic Connection Layers on Semiconductor Components | |
GB1157581A (en) | Improvements in and relating to Ohmic Contacts. | |
GB1267828A (en) | Contact formation process | |
GB1333106A (en) | Semiconductor devices | |
GB1304269A (en) | ||
GB1052856A (en) | ||
ES480898A1 (en) | Gold-tin-gold ohmic contact to N-type group III-V semiconductors | |
GB967673A (en) | Method of making connections to semiconductive bodies | |
US3402081A (en) | Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby | |
GB1479154A (en) | Germanium doped gaas devices | |
EP0132323A3 (en) | Sputtered semiconducting films of catenated phosphorus material | |
GB1244618A (en) | A method of forming a metal contact on an element and a vacuum deposition system that may be used in performing this method | |
GB1073069A (en) | Process for producing a superconductor | |
GB1254362A (en) | A method of providing ohmic contacts on gallium arsenide | |
GB1050659A (en) | ||
JPS57152166A (en) | Manufacture of schottky barrier gate field effect transistor | |
GB1246946A (en) | Method of forming the electrode of a semiconductor device | |
ES409995A1 (en) | Process for bonding copper or iron to titanium or tantalum | |
GB1009455A (en) | Improvements in or relating to electrical contacts | |
JPS5547379A (en) | Manufacture of boron nitride coated film by chemical vapor deposition | |
GB1537298A (en) | Method of producing a metal layer on a substrate | |
GB1227519A (en) | ||
GB1269130A (en) | Improvements relating to ohmic contacts for semiconductor devices | |
JPS5662339A (en) | Production of semiconductor device |