GB1254362A - A method of providing ohmic contacts on gallium arsenide - Google Patents

A method of providing ohmic contacts on gallium arsenide

Info

Publication number
GB1254362A
GB1254362A GB38730/69A GB3873069A GB1254362A GB 1254362 A GB1254362 A GB 1254362A GB 38730/69 A GB38730/69 A GB 38730/69A GB 3873069 A GB3873069 A GB 3873069A GB 1254362 A GB1254362 A GB 1254362A
Authority
GB
United Kingdom
Prior art keywords
arsenic
gallium arsenide
contact material
contact
vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38730/69A
Inventor
George King
John William Frederick Rayner
Anthony Charles Powell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB38730/69A priority Critical patent/GB1254362A/en
Priority to US43871A priority patent/US3647536A/en
Publication of GB1254362A publication Critical patent/GB1254362A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/02Contacts, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/909Controlled atmosphere

Abstract

1,254,362. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. 29 July, 1970 [1 Aug., 1969], No. 38730/69. Heading H1K. An ohmic contact is made to a gallium arsenide body by depositing a contact material on the body, and subsequently alloying it to the body in the presence of arsenic vapour. An inert or reducing gas, e.g. hydrogen, may also be present, the arsenic vapour being provided from an arsenic metal source heated to between 350 and 400‹ C. The alloying process may take place at 610‹ C., in not more than five minutes. The contact material may be a layer of tin followed by a layer of silver, both deposited by evaporation at a pressure of less than 10<SP>-5</SP> torr, or by sputtering. The body may be thoroughly cleaned prior to contact material deposition. The device, which may be a Gunn-effect oscillator, may be bonded at one contact to a copper heat sink, again in the presence of arsenic vapour.
GB38730/69A 1969-08-01 1969-08-01 A method of providing ohmic contacts on gallium arsenide Expired GB1254362A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB38730/69A GB1254362A (en) 1969-08-01 1969-08-01 A method of providing ohmic contacts on gallium arsenide
US43871A US3647536A (en) 1969-08-01 1970-06-05 Ohmic contacts for gallium arsenide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB38730/69A GB1254362A (en) 1969-08-01 1969-08-01 A method of providing ohmic contacts on gallium arsenide

Publications (1)

Publication Number Publication Date
GB1254362A true GB1254362A (en) 1971-11-24

Family

ID=10405339

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38730/69A Expired GB1254362A (en) 1969-08-01 1969-08-01 A method of providing ohmic contacts on gallium arsenide

Country Status (2)

Country Link
US (1) US3647536A (en)
GB (1) GB1254362A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890455A (en) * 1972-06-23 1975-06-17 Ibm Method of electrolessly plating alloys

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2995475A (en) * 1958-11-04 1961-08-08 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3127285A (en) * 1961-02-21 1964-03-31 Vapor condensation doping method

Also Published As

Publication number Publication date
US3647536A (en) 1972-03-07

Similar Documents

Publication Publication Date Title
GB1297467A (en)
GB1174613A (en) Metallic Connection Layers on Semiconductor Components
GB1157581A (en) Improvements in and relating to Ohmic Contacts.
GB1267828A (en) Contact formation process
GB1333106A (en) Semiconductor devices
GB1304269A (en)
GB1052856A (en)
ES480898A1 (en) Gold-tin-gold ohmic contact to N-type group III-V semiconductors
GB967673A (en) Method of making connections to semiconductive bodies
US3402081A (en) Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby
GB1479154A (en) Germanium doped gaas devices
EP0132323A3 (en) Sputtered semiconducting films of catenated phosphorus material
GB1244618A (en) A method of forming a metal contact on an element and a vacuum deposition system that may be used in performing this method
GB1073069A (en) Process for producing a superconductor
GB1254362A (en) A method of providing ohmic contacts on gallium arsenide
GB1050659A (en)
JPS57152166A (en) Manufacture of schottky barrier gate field effect transistor
GB1246946A (en) Method of forming the electrode of a semiconductor device
ES409995A1 (en) Process for bonding copper or iron to titanium or tantalum
GB1009455A (en) Improvements in or relating to electrical contacts
JPS5547379A (en) Manufacture of boron nitride coated film by chemical vapor deposition
GB1537298A (en) Method of producing a metal layer on a substrate
GB1227519A (en)
GB1269130A (en) Improvements relating to ohmic contacts for semiconductor devices
JPS5662339A (en) Production of semiconductor device