GB1254362A - A method of providing ohmic contacts on gallium arsenide - Google Patents

A method of providing ohmic contacts on gallium arsenide

Info

Publication number
GB1254362A
GB1254362A GB38730/69A GB3873069A GB1254362A GB 1254362 A GB1254362 A GB 1254362A GB 38730/69 A GB38730/69 A GB 38730/69A GB 3873069 A GB3873069 A GB 3873069A GB 1254362 A GB1254362 A GB 1254362A
Authority
GB
United Kingdom
Prior art keywords
arsenic
gallium arsenide
contact material
contact
vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38730/69A
Inventor
George King
John William Frederick Rayner
Anthony Charles Powell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB38730/69A priority Critical patent/GB1254362A/en
Priority to US43871A priority patent/US3647536A/en
Publication of GB1254362A publication Critical patent/GB1254362A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,254,362. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. 29 July, 1970 [1 Aug., 1969], No. 38730/69. Heading H1K. An ohmic contact is made to a gallium arsenide body by depositing a contact material on the body, and subsequently alloying it to the body in the presence of arsenic vapour. An inert or reducing gas, e.g. hydrogen, may also be present, the arsenic vapour being provided from an arsenic metal source heated to between 350 and 400‹ C. The alloying process may take place at 610‹ C., in not more than five minutes. The contact material may be a layer of tin followed by a layer of silver, both deposited by evaporation at a pressure of less than 10<SP>-5</SP> torr, or by sputtering. The body may be thoroughly cleaned prior to contact material deposition. The device, which may be a Gunn-effect oscillator, may be bonded at one contact to a copper heat sink, again in the presence of arsenic vapour.
GB38730/69A 1969-08-01 1969-08-01 A method of providing ohmic contacts on gallium arsenide Expired GB1254362A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB38730/69A GB1254362A (en) 1969-08-01 1969-08-01 A method of providing ohmic contacts on gallium arsenide
US43871A US3647536A (en) 1969-08-01 1970-06-05 Ohmic contacts for gallium arsenide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB38730/69A GB1254362A (en) 1969-08-01 1969-08-01 A method of providing ohmic contacts on gallium arsenide

Publications (1)

Publication Number Publication Date
GB1254362A true GB1254362A (en) 1971-11-24

Family

ID=10405339

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38730/69A Expired GB1254362A (en) 1969-08-01 1969-08-01 A method of providing ohmic contacts on gallium arsenide

Country Status (2)

Country Link
US (1) US3647536A (en)
GB (1) GB1254362A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890455A (en) * 1972-06-23 1975-06-17 Ibm Method of electrolessly plating alloys

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2995475A (en) * 1958-11-04 1961-08-08 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3127285A (en) * 1961-02-21 1964-03-31 Vapor condensation doping method

Also Published As

Publication number Publication date
US3647536A (en) 1972-03-07

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