GB1234976A - Improvements in or relating to the manufacture of semiconductor devices - Google Patents
Improvements in or relating to the manufacture of semiconductor devicesInfo
- Publication number
- GB1234976A GB1234976A GB3876068A GB3876068A GB1234976A GB 1234976 A GB1234976 A GB 1234976A GB 3876068 A GB3876068 A GB 3876068A GB 3876068 A GB3876068 A GB 3876068A GB 1234976 A GB1234976 A GB 1234976A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafers
- gold
- baffle
- titanium
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000012864 cross contamination Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,234,976. Vacuum deposition. GENERAL ELECTRIC CO. Ltd. Sept.3, 1969 [Aug.13, 1968], No. 38760/68, Heading C7F. [Also in Division H1] An electrical contact is provided on a silicon carbide body by heating it to at least 100‹C. (preferably above 250‹C.) in vacuo, maintaining these conditions while a layer of titanium and an overlayer of a protective metal e.g. silver or gold are deposited and then cooling to room temperature. The contacts may be defined by depositing through a mask or by form-etching a layer deposited overall. In the embodiment silicon carbide wafers are disposed over apertures in a heated steel plate above sources of titanium and silver contained respectively in a molybdenum spiral and a tantalum boat, the wafers having been pre-treated in a mixture of potassium dichromate and phospharic acid, degreased and finally rinsed in hydrofluoric acid. The spiral and boat, separated by a baffle to prevent cross-contamination, are successively heated to deposit the two metals to thicknesses of .1Á and 1Á respectively, a baffle being placed in front of the wafers in the early stages of each evaporation to arrest impurities. Finally tinned copper wires are soldered to the coated areas or gold wires if gold is used as protective metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3876068A GB1234976A (en) | 1968-08-13 | 1968-08-13 | Improvements in or relating to the manufacture of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3876068A GB1234976A (en) | 1968-08-13 | 1968-08-13 | Improvements in or relating to the manufacture of semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1234976A true GB1234976A (en) | 1971-06-09 |
Family
ID=10405532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3876068A Expired GB1234976A (en) | 1968-08-13 | 1968-08-13 | Improvements in or relating to the manufacture of semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1234976A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991009421A1 (en) * | 1989-12-07 | 1991-06-27 | General Instrument Corporation | Packaged diode for high temperature operation |
-
1968
- 1968-08-13 GB GB3876068A patent/GB1234976A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991009421A1 (en) * | 1989-12-07 | 1991-06-27 | General Instrument Corporation | Packaged diode for high temperature operation |
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