GB1253779A - Improvements in or relating to the deposition of gallium phosphide - Google Patents

Improvements in or relating to the deposition of gallium phosphide

Info

Publication number
GB1253779A
GB1253779A GB37466/70A GB3746670A GB1253779A GB 1253779 A GB1253779 A GB 1253779A GB 37466/70 A GB37466/70 A GB 37466/70A GB 3746670 A GB3746670 A GB 3746670A GB 1253779 A GB1253779 A GB 1253779A
Authority
GB
United Kingdom
Prior art keywords
gallium phosphide
deposition
relating
substrate temperature
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37466/70A
Inventor
Jacob Sosniak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1253779A publication Critical patent/GB1253779A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

1,253,779. Sputtering gallium phosphide. WESTERN ELECTRIC CO. Inc. Aug.4, 1970 [Aug.8, 1969], No.37466/70. Heading C7F. Polycrystalline gallium phosphide is sputtered on to a substrate of e.g. glass, ceramic or high melting point metals, at a substrate temperature range of 25 to 650‹C. at a rate varying from 80Š per minute at a substrate temperature of 650‹ C. to 380A per minute at a substrate temperature of 25‹C. The coating may be annealed at 600 to 700‹C., and it may contain a dopant e.g. Zn.
GB37466/70A 1969-08-08 1970-08-04 Improvements in or relating to the deposition of gallium phosphide Expired GB1253779A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84861269A 1969-08-08 1969-08-08

Publications (1)

Publication Number Publication Date
GB1253779A true GB1253779A (en) 1971-11-17

Family

ID=25303788

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37466/70A Expired GB1253779A (en) 1969-08-08 1970-08-04 Improvements in or relating to the deposition of gallium phosphide

Country Status (8)

Country Link
US (1) US3607699A (en)
JP (1) JPS50513B1 (en)
BE (1) BE754400A (en)
DE (1) DE2039514A1 (en)
FR (1) FR2056548A5 (en)
GB (1) GB1253779A (en)
NL (1) NL7011436A (en)
SE (1) SE351789B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894893A (en) * 1968-03-30 1975-07-15 Kyodo Denshi Gijyutsu Kk Method for the production of monocrystal-polycrystal semiconductor devices
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
JPS53123659A (en) * 1977-04-05 1978-10-28 Futaba Denshi Kogyo Kk Method of producing compound semiconductor wafer
US4761300A (en) * 1983-06-29 1988-08-02 Stauffer Chemical Company Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer
US5473456A (en) * 1993-10-27 1995-12-05 At&T Corp. Method for growing transparent conductive gallium-indium-oxide films by sputtering
US6258620B1 (en) 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices

Also Published As

Publication number Publication date
DE2039514A1 (en) 1971-02-18
SE351789B (en) 1972-12-11
FR2056548A5 (en) 1971-05-14
JPS50513B1 (en) 1975-01-09
NL7011436A (en) 1971-02-10
US3607699A (en) 1971-09-21
BE754400A (en) 1971-01-18

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