GB1052661A - - Google Patents

Info

Publication number
GB1052661A
GB1052661A GB1052661DA GB1052661A GB 1052661 A GB1052661 A GB 1052661A GB 1052661D A GB1052661D A GB 1052661DA GB 1052661 A GB1052661 A GB 1052661A
Authority
GB
United Kingdom
Prior art keywords
junction
jan
semi
conductor
resistivity side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of GB1052661A publication Critical patent/GB1052661A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/978Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
GB1052661D 1963-01-30 Expired GB1052661A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25503763A 1963-01-30 1963-01-30

Publications (1)

Publication Number Publication Date
GB1052661A true GB1052661A (https=) 1900-01-01

Family

ID=22966575

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1052661D Expired GB1052661A (https=) 1963-01-30

Country Status (5)

Country Link
US (1) US3491272A (https=)
DE (1) DE1281584B (https=)
FR (1) FR1386650A (https=)
GB (1) GB1052661A (https=)
SE (3) SE371043B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3532946A (en) * 1967-01-26 1970-10-06 Bbc Brown Boveri & Cie Semiconductor element having pnpn structure and bevelled lateral surface

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6603372A (https=) * 1965-03-25 1966-09-26
GB1230368A (https=) * 1968-12-05 1971-04-28
US3628107A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with peripheral protective junction
US3800190A (en) * 1970-11-02 1974-03-26 Bbc Brown Boveri & Cie Cooling system for power semiconductor devices
US3943547A (en) * 1970-12-26 1976-03-09 Hitachi, Ltd. Semiconductor device
DE2340107A1 (de) * 1973-07-06 1975-01-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
NL180265C (nl) * 1976-06-21 1987-01-16 Gen Electric Halfgeleiderinrichting voor hoge spanning.
DE2849184A1 (de) 1978-11-13 1980-05-22 Bbc Brown Boveri & Cie Verfahren zur herstellung eines scheibenfoermigen silizium-halbleiterbauelementes mit negativer anschraegung
EP0303046B1 (de) * 1987-08-11 1992-01-02 BBC Brown Boveri AG Gate-Turn-Off-Thyristor
DE4209220A1 (de) * 1992-03-21 1993-09-23 Deutsche Forsch Luft Raumfahrt Ablagerungsfreier brenner
US5398630A (en) * 1992-11-10 1995-03-21 Us Shipbuilding Corporation, Inc. Simplified midbody section for marine vessels and method and apparatus for construction
WO2000004597A2 (de) * 1998-07-13 2000-01-27 Siemens Aktiengesellschaft Asymmetrisch sperrendes leistungshalbleiterbauelement
US7268339B1 (en) * 2005-09-27 2007-09-11 Radiation Monitoring Devices, Inc. Large area semiconductor detector with internal gain
WO2017094180A1 (ja) * 2015-12-04 2017-06-08 三菱電機株式会社 パワー半導体装置
EP4006990B1 (en) 2020-11-27 2023-04-05 Hitachi Energy Switzerland AG Semiconductor device with a side surface having different partial regions

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
NL224173A (https=) * 1957-01-18
US2989424A (en) * 1958-03-31 1961-06-20 Westinghouse Electric Corp Method of providing an oxide protective coating for semiconductors
NL134389C (https=) * 1958-07-02
NL242556A (https=) * 1958-08-27
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
FR1243865A (fr) * 1959-09-08 1960-10-21 Telecommunications Sa Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium
FR1273633A (fr) * 1959-11-21 1961-10-13 Siemens Ag Procédé d'obtention d'éléments semi-conducteurs
US3260634A (en) * 1961-02-17 1966-07-12 Motorola Inc Method of etching a semiconductor wafer to provide tapered dice
US3189799A (en) * 1961-06-14 1965-06-15 Microwave Ass Semiconductor devices and method of fabricating them
NL280641A (https=) * 1961-07-07
US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3532946A (en) * 1967-01-26 1970-10-06 Bbc Brown Boveri & Cie Semiconductor element having pnpn structure and bevelled lateral surface

Also Published As

Publication number Publication date
SE325959B (https=) 1970-07-13
FR1386650A (fr) 1965-01-22
SE371043B (https=) 1974-11-04
DE1281584B (de) 1968-10-31
US3491272A (en) 1970-01-20
SE363428B (https=) 1974-01-14

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