DE1281584B - Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium oder Germanium mit einem oder mehreren diffundierten PN-UEbergaengen - Google Patents

Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium oder Germanium mit einem oder mehreren diffundierten PN-UEbergaengen

Info

Publication number
DE1281584B
DE1281584B DEG39696A DEG0039696A DE1281584B DE 1281584 B DE1281584 B DE 1281584B DE G39696 A DEG39696 A DE G39696A DE G0039696 A DEG0039696 A DE G0039696A DE 1281584 B DE1281584 B DE 1281584B
Authority
DE
Germany
Prior art keywords
junction
semiconductor
semiconductor body
zone
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEG39696A
Other languages
German (de)
English (en)
Inventor
Robert Llewellyn Davies
Gerald Charles Huth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE1281584B publication Critical patent/DE1281584B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
DEG39696A 1963-01-30 1964-01-25 Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium oder Germanium mit einem oder mehreren diffundierten PN-UEbergaengen Pending DE1281584B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25503763A 1963-01-30 1963-01-30

Publications (1)

Publication Number Publication Date
DE1281584B true DE1281584B (de) 1968-10-31

Family

ID=22966575

Family Applications (1)

Application Number Title Priority Date Filing Date
DEG39696A Pending DE1281584B (de) 1963-01-30 1964-01-25 Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium oder Germanium mit einem oder mehreren diffundierten PN-UEbergaengen

Country Status (5)

Country Link
US (1) US3491272A (https=)
DE (1) DE1281584B (https=)
FR (1) FR1386650A (https=)
GB (1) GB1052661A (https=)
SE (3) SE371043B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4254590A (en) 1978-11-13 1981-03-10 Bbc Brown Boveri & Company Limited Method for the production of a disk-shaped silicon semiconductor component with negative beveling

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6603372A (https=) * 1965-03-25 1966-09-26
DE1589496A1 (de) * 1967-01-26 1970-03-26 Bbc Brown Boveri & Cie Halbleiterelement mit abgeschraegter Seitenflaeche und Verfahren zum Herstellen
GB1230368A (https=) * 1968-12-05 1971-04-28
US3628107A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with peripheral protective junction
US3800190A (en) * 1970-11-02 1974-03-26 Bbc Brown Boveri & Cie Cooling system for power semiconductor devices
US3943547A (en) * 1970-12-26 1976-03-09 Hitachi, Ltd. Semiconductor device
DE2340107A1 (de) * 1973-07-06 1975-01-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
NL180265C (nl) * 1976-06-21 1987-01-16 Gen Electric Halfgeleiderinrichting voor hoge spanning.
EP0303046B1 (de) * 1987-08-11 1992-01-02 BBC Brown Boveri AG Gate-Turn-Off-Thyristor
DE4209220A1 (de) * 1992-03-21 1993-09-23 Deutsche Forsch Luft Raumfahrt Ablagerungsfreier brenner
US5398630A (en) * 1992-11-10 1995-03-21 Us Shipbuilding Corporation, Inc. Simplified midbody section for marine vessels and method and apparatus for construction
WO2000004597A2 (de) * 1998-07-13 2000-01-27 Siemens Aktiengesellschaft Asymmetrisch sperrendes leistungshalbleiterbauelement
US7268339B1 (en) * 2005-09-27 2007-09-11 Radiation Monitoring Devices, Inc. Large area semiconductor detector with internal gain
WO2017094180A1 (ja) * 2015-12-04 2017-06-08 三菱電機株式会社 パワー半導体装置
EP4006990B1 (en) 2020-11-27 2023-04-05 Hitachi Energy Switzerland AG Semiconductor device with a side surface having different partial regions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB876332A (en) * 1958-08-27 1961-08-30 Siemens Ag Improvements in or relating to semi-conductor devices and methods of producing such devices
GB883468A (en) * 1959-03-11 1961-11-29 Maurice Gilbert Anatole Bernar Improvements in or relating to semi-conductor devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
NL224173A (https=) * 1957-01-18
US2989424A (en) * 1958-03-31 1961-06-20 Westinghouse Electric Corp Method of providing an oxide protective coating for semiconductors
NL134389C (https=) * 1958-07-02
FR1243865A (fr) * 1959-09-08 1960-10-21 Telecommunications Sa Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium
FR1273633A (fr) * 1959-11-21 1961-10-13 Siemens Ag Procédé d'obtention d'éléments semi-conducteurs
US3260634A (en) * 1961-02-17 1966-07-12 Motorola Inc Method of etching a semiconductor wafer to provide tapered dice
US3189799A (en) * 1961-06-14 1965-06-15 Microwave Ass Semiconductor devices and method of fabricating them
NL280641A (https=) * 1961-07-07
US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB876332A (en) * 1958-08-27 1961-08-30 Siemens Ag Improvements in or relating to semi-conductor devices and methods of producing such devices
GB883468A (en) * 1959-03-11 1961-11-29 Maurice Gilbert Anatole Bernar Improvements in or relating to semi-conductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4254590A (en) 1978-11-13 1981-03-10 Bbc Brown Boveri & Company Limited Method for the production of a disk-shaped silicon semiconductor component with negative beveling

Also Published As

Publication number Publication date
GB1052661A (https=) 1900-01-01
SE325959B (https=) 1970-07-13
FR1386650A (fr) 1965-01-22
SE371043B (https=) 1974-11-04
US3491272A (en) 1970-01-20
SE363428B (https=) 1974-01-14

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