WO2000004597A2 - Asymmetrisch sperrendes leistungshalbleiterbauelement - Google Patents
Asymmetrisch sperrendes leistungshalbleiterbauelement Download PDFInfo
- Publication number
- WO2000004597A2 WO2000004597A2 PCT/DE1999/002038 DE9902038W WO0004597A2 WO 2000004597 A2 WO2000004597 A2 WO 2000004597A2 DE 9902038 W DE9902038 W DE 9902038W WO 0004597 A2 WO0004597 A2 WO 0004597A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- region
- semiconductor body
- main direction
- basic doping
- doped
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 230000000903 blocking effect Effects 0.000 title description 11
- 239000002019 doping agent Substances 0.000 claims abstract description 18
- 230000001154 acute effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000035876 healing Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
Definitions
- the present invention relates to an asymmetrically blocking semiconductor component which can be used in m circuits with high voltages and currents.
- a goal in the development of modern circuits is to reduce the number of required components such as. B. semiconductor devices, capacitors or resistors.
- B. semiconductor devices, capacitors or resistors attempts are being made to reduce protective circuits, which leads to increased loads on the components. Increased demands must therefore be made of the resilience of these components with a strong increase or decrease in current or voltage.
- EP 0 262 356 B1 describes a method for producing a pn junction of high dielectric strength, in which the edge region of a doped region which is formed on the top side of a semiconductor body and whose boundary surface forms a pn junction which forms on the edge
- the top of the semiconductor body is curved, and is gradually provided with a gradually decreasing doping concentration on the outside.
- a semiconductor layer on the upper side is used as the dopant source and the dose of diffusion of the dopant is increasingly reduced towards the outside through recesses of different widths which are milled out of this semiconductor layer.
- EP 0 389 863 B1 describes a method for producing a pn junction of high dielectric strength, in which the method from EP 0 262 356 B1 is supplemented in that the semiconductor material is removed from the top in the edge region.
- the etching depth is dimensioned such that the surface breakdown voltage of the pn junction biased in the blocking direction is set to a predetermined value.
- the object of the present invention is to provide an asymmetrically blocking power semiconductor component which is suitable for minimizing the total power loss due to low thickness of the component and low doping of the base material.
- a laterally delimited region on an upper side of a semiconductor body provided with a basic doping which in comparison to the basic doping of the semiconductor material is highly doped for the same sign, is laterally defined by a special Targeted edge area completed. This edge area reduces the maximum field strength occurring at the edge of the current path during operation of the component.
- a main direction of the current path occurring in the component during operation of the component runs essentially perpendicular to this upper side of the semiconductor body and is determined by the laterally delimited region and by a further highly doped region which, from the laterally delimited region, has a basic doping Area arranged separately from the top and for which the opposite sign of the electrical conductivity is doped. That at least the first-mentioned highly doped region is laterally delimited means that it is delimited transversely to this main direction of the current path within the semiconductor body and that the interface of this region runs at the edge towards the top of the semiconductor body.
- a central area with the basic doping of the semiconductor body is located between the above-mentioned highly doped areas.
- a pn junction is formed by the region highly doped for the sign of the conductivity opposite to the basic doping and by adjoining semiconductor material doped for the sign of the conductivity of the basic doping and extends transversely to the main direction of the current path.
- the edge region adjacent to the laterally delimited region in the direction transverse to the main direction of the current path is doped for the same sign of conductivity.
- the edge area has a smaller dimension in the main direction or a smaller gradient of the concentration of the dopant in the main direction compared to the laterally delimited area, so that the effective thickness of the central area provided with the basic doping is greater than adjacent to the edge area in the central part of the component provided for the current flow, ie adjacent to the laterally delimited area in the main direction.
- Executions of the component according to the invention look like; these are generally any asymmetrical blocking components such as diodes, asymmetrical (i.e. one-sided blocking) transistors and thyristors, in particular GTOs (gate turn off thyristors), as well as monolithically integrated systems such as e.g. B. reverse conducting thyristors.
- asymmetrical blocking components such as diodes, asymmetrical (i.e. one-sided blocking) transistors and thyristors, in particular GTOs (gate turn off thyristors), as well as monolithically integrated systems such as e.g. B. reverse conducting thyristors.
- GTOs gate turn off thyristors
- monolithically integrated systems such as e.g. B. reverse conducting thyristors.
- the typical dimensions entered in FIG. 1 for the thicknesses of the individual doped regions are likewise only to be understood as examples.
- Figure 1 shows the edge region of a power diode in cross section.
- the diode which is rotationally symmetrical in this example results from a rotation of the cross section shown about the left boundary line 22.
- a semiconductor body 1 has a basic doping, which in this case results from a low doping concentration for there is.
- highly doped regions for mutually opposite conductivity types are formed on mutually opposite upper sides.
- the n + region 2 is delimited laterally m on the plane of the upper side 11 of the semiconductor body.
- the oppositely doped p + region 3 extends over the entire opposite top 12 of the component.
- Contacts 6, 7 for electrical connection are applied to the outer surfaces of these areas. These contacts are preferably made of metal.
- a main direction 4 for the current path during operation of the component is determined by the arrangement of the doped regions 2, 3. This main direction 4 is shown here in the technical current direction.
- the laterally delimited doped region 2 is surrounded by another doped region of the same sign of conductivity as the edge region 5.
- This edge region 5 adjoins the laterally delimited region 2 and is doped n-conducting in accordance with this region 2.
- the edge region 5 is reduced in its dimension in the main direction 4 compared to the n + region 2.
- the region of the n ⁇ basic doping is therefore somewhat thicker than in the region of the current path.
- the effective thickness of the central region 8 (base region) of the semiconductor body 1, which has the basic doping and is located between the highly doped regions 2, 3 (emitter regions), can therefore be chosen to be sufficiently thin to meet essential electrical parameters such as, for. B. to optimize the forward voltage or the storage charge, while laterally the laterally limited area 2, the higher effective thickness of the central area 8 there results in a reduction in the electric field strength. This ensures that a breakthrough occurs in the reverse direction, not in the edge region, but in the central region of the component, and the ideal breakdown voltage specified essentially by means of the basic doping of the semiconductor material can be achieved.
- the effective thickness is essentially predetermined by the thickness of the central region 8 (base region) of the basic doping and is influenced only to a very small extent by the thicknesses of the highly doped regions 2, 3 (emitter regions).
- a preferred embodiment provides an edge area with at most one third of the thickness of the laterally delimited area 2.
- the edge region 5 can, as shown in the example, have a reduced dimension in the main direction 4 compared to the adjacent highly doped region 2.
- the desired effect is also achieved according to the invention in that the gradient of the concentration of the dopant in the main direction 4 in the edge region 5 is set lower than in the adjacent highly doped region 2. This cannot be done by the geometric contours shown in the figure represent.
- the upper and lower boundaries of regions 2 and 5 shown in the figure can be at the same height in this alternative exemplary embodiment.
- the dimension of the edge region 5, as shown in the figure can be reduced in the main direction (ie, viewed from the top of the semiconductor body, the concentration of the dopant in the edge region already drops before reaching the level of the lower limit of the laterally limited area 2 in the figure to the value in the central area 8).
- the semiconductor body on the side of the pn junction 38 is delimited by an acute-angled edge 10 (termination of the pn junction by a so-called positive angle).
- the inside angle a between the top 12 and the side surface 21 (jacket of the truncated cone forming the semiconductor body) or between the plane of the pn junction 38 and this side surface 21 is typically approximately 40 °.
- the field strength on the surface can be further reduced to an uncritical value.
- the surface field strength can be reduced more by such an etching process.
- the result of this diode is that the breakdown does not occur in the reverse direction during operation in the reverse direction, but in the central area of the component, and thus the ideal breakdown voltage which is essentially predetermined by the basic doping of the semiconductor body 1 can be set.
- the breakdown voltage of the diode is not significantly influenced by the curvature of the boundary of the n + region 2 at the edge.
- the specified structure can be z. B. realize in such a way that a diffusion process for doping region 2 (emitter region) is carried out first.
- the temperature and the diffusion time are adapted to the desired dimension of the central n + region 2, taking into account the diffusion constant of the dopant.
- a semiconductor body made of silicon can be used to form the n + doping using a mask z.
- B. a POCl 3 diffusion with subsequent tempering step for healing or a phosphorus ion implantation with subsequent tempering step for healing.
- the dopant is driven in and annealed, for. B. at 1240 ° C for half an hour.
- z. B a full-surface phosphorus ion implantation or a POCl 3 assignment of the component with a subsequent driving and healing step.
- the process parameters it must be taken into account that when the edge region 5 is produced, the dopant of the central region 2 penetrates further into the semiconductor body, so that the dimension of the region 2 increases in the main direction 4.
- doping can first be introduced and cured over the entire surface, the depth of penetration and the concentration corresponding to the desired values in the edge region 5.
- the central region 2 is produced in the desired dimensions by further introduction of dopant and annealing. It should be taken into account that this healing also changes the penetration depth and the concentration of the dopant in the edge region 5, but in a manner known per se to the person skilled in the art.
- the gradient of the diffusion for n-conduction in the edge region 5 is chosen to be lower than in the region 2 in order to allow the electrical field strength in the edge region to decrease somewhat more gently. It can also be advantageous if, as shown in the figure, the top 11 of the semiconductor body is chamfered towards the edge 9 in the region of the edge region 5. The thickness of the
- Edge area 5 then decreases continuously towards the outer edge 9 of the component.
- FIG. 2 shows, as a further example, a cross section corresponding to FIG. 1 through a GTO according to the invention.
- the laterally delimited region is an n-type doped buffer zone 15 with an anode short 14 in which p + -type doped regions 13 are embedded as anodes.
- On the opposite upper side there are n + -conductively doped cathodes 16 with etched trenches 17 provided for the gate.
- the area with dashed lines may or may not be present. For electrical connection there are contacts in the respective areas which are not shown in FIG. 2.
- either the diode or the thyristor has an edge termination, which is formed within the semiconductor body in an obvious modification of the exemplary embodiment described.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19981343A DE19981343B4 (de) | 1998-07-13 | 1999-07-02 | Asymmetrisch sperrendes Leistungshalbleiterbauelement |
DE19981343D DE19981343D2 (de) | 1998-07-13 | 1999-07-02 | Asymmetrisch sperrendes Leistungshalbleiterbauelement |
AU57267/99A AU5726799A (en) | 1998-07-13 | 1999-07-02 | Asymmetrically blocking power semiconductor component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19831337.3 | 1998-07-13 | ||
DE19831337 | 1998-07-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000004597A2 true WO2000004597A2 (de) | 2000-01-27 |
WO2000004597A3 WO2000004597A3 (de) | 2000-04-20 |
Family
ID=7873887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1999/002038 WO2000004597A2 (de) | 1998-07-13 | 1999-07-02 | Asymmetrisch sperrendes leistungshalbleiterbauelement |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU5726799A (de) |
DE (1) | DE19981343B4 (de) |
WO (1) | WO2000004597A2 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10250608A1 (de) * | 2002-10-30 | 2004-05-19 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung |
DE102004045768A1 (de) * | 2004-09-21 | 2006-04-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements und Halbleiterbauelement mit einem Randabschluss |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1464244A1 (de) * | 1963-09-25 | 1969-01-02 | Licentia Gmbh | Halbleiteranordnung aus drei oder mehr Schichten abwechselnder Leitfaehigkeit |
US3491272A (en) * | 1963-01-30 | 1970-01-20 | Gen Electric | Semiconductor devices with increased voltage breakdown characteristics |
EP0144876A2 (de) * | 1983-12-07 | 1985-06-19 | BBC Brown Boveri AG | Halbleiterbauelement |
EP0262356A2 (de) * | 1986-09-30 | 1988-04-06 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit |
EP0389863A1 (de) * | 1989-03-29 | 1990-10-03 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
EP0725444A1 (de) * | 1995-02-03 | 1996-08-07 | Hitachi, Ltd. | Thyristor und Verfahren zur Herstellung desselben |
-
1999
- 1999-07-02 DE DE19981343A patent/DE19981343B4/de not_active Expired - Fee Related
- 1999-07-02 WO PCT/DE1999/002038 patent/WO2000004597A2/de active Application Filing
- 1999-07-02 AU AU57267/99A patent/AU5726799A/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3491272A (en) * | 1963-01-30 | 1970-01-20 | Gen Electric | Semiconductor devices with increased voltage breakdown characteristics |
DE1464244A1 (de) * | 1963-09-25 | 1969-01-02 | Licentia Gmbh | Halbleiteranordnung aus drei oder mehr Schichten abwechselnder Leitfaehigkeit |
EP0144876A2 (de) * | 1983-12-07 | 1985-06-19 | BBC Brown Boveri AG | Halbleiterbauelement |
EP0262356A2 (de) * | 1986-09-30 | 1988-04-06 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit |
EP0389863A1 (de) * | 1989-03-29 | 1990-10-03 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
EP0725444A1 (de) * | 1995-02-03 | 1996-08-07 | Hitachi, Ltd. | Thyristor und Verfahren zur Herstellung desselben |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10250608A1 (de) * | 2002-10-30 | 2004-05-19 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung |
DE10250608B4 (de) * | 2002-10-30 | 2005-09-29 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung |
DE102004045768A1 (de) * | 2004-09-21 | 2006-04-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements und Halbleiterbauelement mit einem Randabschluss |
DE102004045768B4 (de) * | 2004-09-21 | 2007-01-04 | Infineon Technologies Ag | Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements |
Also Published As
Publication number | Publication date |
---|---|
DE19981343B4 (de) | 2004-03-18 |
WO2000004597A3 (de) | 2000-04-20 |
AU5726799A (en) | 2000-02-07 |
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