AU5726799A - Asymmetrically blocking power semiconductor component - Google Patents

Asymmetrically blocking power semiconductor component

Info

Publication number
AU5726799A
AU5726799A AU57267/99A AU5726799A AU5726799A AU 5726799 A AU5726799 A AU 5726799A AU 57267/99 A AU57267/99 A AU 57267/99A AU 5726799 A AU5726799 A AU 5726799A AU 5726799 A AU5726799 A AU 5726799A
Authority
AU
Australia
Prior art keywords
power semiconductor
semiconductor component
blocking power
asymmetrically blocking
asymmetrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU57267/99A
Other languages
English (en)
Inventor
Martin Ruff
Hans-Joachim Schulze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of AU5726799A publication Critical patent/AU5726799A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
AU57267/99A 1998-07-13 1999-07-02 Asymmetrically blocking power semiconductor component Abandoned AU5726799A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19831337 1998-07-13
DE19831337 1998-07-13
PCT/DE1999/002038 WO2000004597A2 (de) 1998-07-13 1999-07-02 Asymmetrisch sperrendes leistungshalbleiterbauelement

Publications (1)

Publication Number Publication Date
AU5726799A true AU5726799A (en) 2000-02-07

Family

ID=7873887

Family Applications (1)

Application Number Title Priority Date Filing Date
AU57267/99A Abandoned AU5726799A (en) 1998-07-13 1999-07-02 Asymmetrically blocking power semiconductor component

Country Status (3)

Country Link
AU (1) AU5726799A (de)
DE (1) DE19981343B4 (de)
WO (1) WO2000004597A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10250608B4 (de) * 2002-10-30 2005-09-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung
DE102004045768B4 (de) * 2004-09-21 2007-01-04 Infineon Technologies Ag Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052661A (de) * 1963-01-30 1900-01-01
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
EP0262356B1 (de) * 1986-09-30 1993-03-31 Siemens Aktiengesellschaft Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit
DE59010606D1 (de) * 1989-03-29 1997-01-30 Siemens Ag Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit
JP3211604B2 (ja) * 1995-02-03 2001-09-25 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
DE19981343B4 (de) 2004-03-18
WO2000004597A3 (de) 2000-04-20
WO2000004597A2 (de) 2000-01-27

Similar Documents

Publication Publication Date Title
AU4562399A (en) Field-controlled high-power semiconductor devices
GB9920418D0 (en) Semiconductor devices
AU5701998A (en) Semiconductor protection devices
GB9815021D0 (en) Semiconductor power device manufacture
AU3120700A (en) Locking chuck
EP0827201A3 (de) Leistungs-Halbleiterbauelement
AU4125999A (en) Fast luminescent silicon
AU4118099A (en) Semiconductor device
GB9911467D0 (en) Semiconductor devices
AU1685300A (en) Semiconductor device
AU5998699A (en) Semiconductor device
AU2934699A (en) Demoludator circuits
EP0979914A3 (de) Schliesseinrichtung
AU3344999A (en) Semiconductor storage device
GB9826517D0 (en) Semiconductor devices
AU6224499A (en) Microelectronic chips
AU3628297A (en) Semiconductor fabrication
GB2344456B (en) Semiconductor devices
GB2341275B (en) Semiconductor devices
AU1512400A (en) Semiconductor energy detector
GB2344457B (en) Semiconductor devices
AU2640499A (en) Semiconductor device
AU6330399A (en) Semiconductor structure for semiconductor components
AU5726799A (en) Asymmetrically blocking power semiconductor component
GB9823778D0 (en) Semiconductor devices

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase