FR1243865A - Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium - Google Patents

Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium

Info

Publication number
FR1243865A
FR1243865A FR804544A FR804544A FR1243865A FR 1243865 A FR1243865 A FR 1243865A FR 804544 A FR804544 A FR 804544A FR 804544 A FR804544 A FR 804544A FR 1243865 A FR1243865 A FR 1243865A
Authority
FR
France
Prior art keywords
realization
improvement
switching diodes
silicon switching
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR804544A
Other languages
English (en)
Inventor
Jean-Claude Solera
Maurice-Raymond Charles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR804544A priority Critical patent/FR1243865A/fr
Application granted granted Critical
Publication of FR1243865A publication Critical patent/FR1243865A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR804544A 1959-09-08 1959-09-08 Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium Expired FR1243865A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR804544A FR1243865A (fr) 1959-09-08 1959-09-08 Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR804544A FR1243865A (fr) 1959-09-08 1959-09-08 Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium

Publications (1)

Publication Number Publication Date
FR1243865A true FR1243865A (fr) 1960-10-21

Family

ID=8718921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR804544A Expired FR1243865A (fr) 1959-09-08 1959-09-08 Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium

Country Status (1)

Country Link
FR (1) FR1243865A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207512B (de) * 1961-03-01 1965-12-23 Telefunken Patent Verfahren zum Herstellen von Halbleiter-bauelementen mit einem plaettchenfoermigen Halbleiterkoerper
DE1246890B (de) * 1960-09-20 1967-08-10 Western Electric Co Diffusionsverfahren zum Herstellen eines Halbleiterbauelements
DE1273699B (de) * 1963-05-30 1968-07-25 Licentia Gmbh Verfahren zum Kontaktieren von mindestens zwei benachbarten Zonen entgegengesetzten Leitungstyps eines steuerbaren Halbleiterbauelementes
US3491272A (en) * 1963-01-30 1970-01-20 Gen Electric Semiconductor devices with increased voltage breakdown characteristics

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1246890B (de) * 1960-09-20 1967-08-10 Western Electric Co Diffusionsverfahren zum Herstellen eines Halbleiterbauelements
DE1207512B (de) * 1961-03-01 1965-12-23 Telefunken Patent Verfahren zum Herstellen von Halbleiter-bauelementen mit einem plaettchenfoermigen Halbleiterkoerper
US3491272A (en) * 1963-01-30 1970-01-20 Gen Electric Semiconductor devices with increased voltage breakdown characteristics
DE1273699B (de) * 1963-05-30 1968-07-25 Licentia Gmbh Verfahren zum Kontaktieren von mindestens zwei benachbarten Zonen entgegengesetzten Leitungstyps eines steuerbaren Halbleiterbauelementes

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