FR1375366A - Dispositif semi-conducteur de commutation - Google Patents

Dispositif semi-conducteur de commutation

Info

Publication number
FR1375366A
FR1375366A FR953006A FR953006A FR1375366A FR 1375366 A FR1375366 A FR 1375366A FR 953006 A FR953006 A FR 953006A FR 953006 A FR953006 A FR 953006A FR 1375366 A FR1375366 A FR 1375366A
Authority
FR
France
Prior art keywords
switching device
semiconductor switching
semiconductor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR953006A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1375366A publication Critical patent/FR1375366A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR953006A 1962-11-07 1963-11-07 Dispositif semi-conducteur de commutation Expired FR1375366A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US235986A US3280386A (en) 1962-11-07 1962-11-07 Semiconductor a.c. switch device

Publications (1)

Publication Number Publication Date
FR1375366A true FR1375366A (fr) 1964-10-16

Family

ID=22887667

Family Applications (1)

Application Number Title Priority Date Filing Date
FR953006A Expired FR1375366A (fr) 1962-11-07 1963-11-07 Dispositif semi-conducteur de commutation

Country Status (4)

Country Link
US (1) US3280386A (fr)
BE (1) BE639633A (fr)
FR (1) FR1375366A (fr)
GB (1) GB1016095A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0702412A1 (fr) * 1993-06-01 1996-03-20 Komatsu Ltd. Dispositif a semi-conducteur ayant une resistance elevee a la rupture

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3360712A (en) * 1963-12-27 1967-12-26 Gen Electric Time ratio control and inverter power circuits
US3399390A (en) * 1964-05-28 1968-08-27 Rca Corp Integrated semiconductor diode matrix
US3440438A (en) * 1965-11-17 1969-04-22 Webcor Inc Semiconductor controlled rectifier current control
US3430072A (en) * 1966-01-11 1969-02-25 Us Navy Sample and hold circuit
US3562610A (en) * 1967-05-25 1971-02-09 Westinghouse Electric Corp Controlled rectifier with improved switching characteristics
US3418489A (en) * 1967-08-09 1968-12-24 Lon H Romanski Switching circuit
US3628107A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with peripheral protective junction
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US4187515A (en) * 1974-08-15 1980-02-05 Tokyo Shibaura Electric Co., Ltd. Semiconductor controlled rectifier
US3972014A (en) * 1974-11-11 1976-07-27 Hutson Jearld L Four quadrant symmetrical semiconductor switch
US4021837A (en) * 1975-04-21 1977-05-03 Hutson Jearld L Symmetrical semiconductor switch having carrier lifetime degrading structure
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
US4286279A (en) * 1976-09-20 1981-08-25 Hutson Jearld L Multilayer semiconductor switching devices
JPS63238716A (ja) * 1986-11-14 1988-10-04 Nec Corp スイッチ回路
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3196330A (en) * 1960-06-10 1965-07-20 Gen Electric Semiconductor devices and methods of making same
US3123750A (en) * 1961-10-31 1964-03-03 Multiple junction semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0702412A1 (fr) * 1993-06-01 1996-03-20 Komatsu Ltd. Dispositif a semi-conducteur ayant une resistance elevee a la rupture
EP0702412A4 (fr) * 1993-06-01 1999-06-09 Komatsu Mfg Co Ltd Dispositif a semi-conducteur ayant une resistance elevee a la rupture

Also Published As

Publication number Publication date
US3280386A (en) 1966-10-18
GB1016095A (en) 1966-01-05
BE639633A (fr)

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