GB1002697A - Improvements in or relating to the production of planar semi-conductor surfaces - Google Patents
Improvements in or relating to the production of planar semi-conductor surfacesInfo
- Publication number
- GB1002697A GB1002697A GB15105/62A GB1510562A GB1002697A GB 1002697 A GB1002697 A GB 1002697A GB 15105/62 A GB15105/62 A GB 15105/62A GB 1510562 A GB1510562 A GB 1510562A GB 1002697 A GB1002697 A GB 1002697A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- support
- conductor
- base
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 9
- 239000013078 crystal Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910003676 SiBr4 Inorganic materials 0.000 abstract 2
- 229910003915 SiCl2H2 Inorganic materials 0.000 abstract 2
- 229910003912 SiCl3H Inorganic materials 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 2
- 229910004480 SiI4 Inorganic materials 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000000227 grinding Methods 0.000 abstract 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 2
- 230000006698 induction Effects 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 2
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 abstract 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES73615A DE1239669B (de) | 1961-04-22 | 1961-04-22 | Verfahren zum Herstellen extrem planer Halbleiterflaechen |
| DES0074875 | 1961-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1002697A true GB1002697A (en) | 1965-08-25 |
Family
ID=25996418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB15105/62A Expired GB1002697A (en) | 1961-04-22 | 1962-04-18 | Improvements in or relating to the production of planar semi-conductor surfaces |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3200001A (enrdf_load_stackoverflow) |
| BE (1) | BE616590A (enrdf_load_stackoverflow) |
| CH (1) | CH395347A (enrdf_load_stackoverflow) |
| DE (1) | DE1239669B (enrdf_load_stackoverflow) |
| GB (1) | GB1002697A (enrdf_load_stackoverflow) |
| NL (1) | NL277330A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325314A (en) * | 1961-10-27 | 1967-06-13 | Siemens Ag | Semi-conductor product and method for making same |
| US3379584A (en) * | 1964-09-04 | 1968-04-23 | Texas Instruments Inc | Semiconductor wafer with at least one epitaxial layer and methods of making same |
| US3447902A (en) * | 1966-04-04 | 1969-06-03 | Motorola Inc | Single crystal silicon rods |
| US3585464A (en) * | 1967-10-19 | 1971-06-15 | Ibm | Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material |
| NL171309C (nl) * | 1970-03-02 | 1983-03-01 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium. |
| JP3444327B2 (ja) * | 1996-03-04 | 2003-09-08 | 信越半導体株式会社 | シリコン単結晶薄膜の製造方法 |
| DE102010040836A1 (de) * | 2010-09-15 | 2012-03-15 | Wacker Chemie Ag | Verfahren zur Herstellung von Silicium-Dünnstäben |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL233004A (enrdf_load_stackoverflow) * | 1954-05-18 | 1900-01-01 | ||
| DE1061745B (de) * | 1957-11-28 | 1959-07-23 | Siemens Ag | Verfahren und Vorrichtung zum Ausrichten eines Keimkristalls beim Ziehen von Einkristallen |
| DE1150366B (de) * | 1958-12-09 | 1963-06-20 | Siemens Ag | Verfahren zur Herstellung von Reinstsilicium |
| US2930722A (en) * | 1959-02-03 | 1960-03-29 | Bell Telephone Labor Inc | Method of treating silicon |
| NL262949A (enrdf_load_stackoverflow) * | 1960-04-02 | 1900-01-01 |
-
0
- NL NL277330D patent/NL277330A/xx unknown
-
1961
- 1961-04-22 DE DES73615A patent/DE1239669B/de active Pending
-
1962
- 1962-03-15 CH CH312162A patent/CH395347A/de unknown
- 1962-04-18 BE BE616590A patent/BE616590A/fr unknown
- 1962-04-18 GB GB15105/62A patent/GB1002697A/en not_active Expired
- 1962-04-19 US US188701A patent/US3200001A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3200001A (en) | 1965-08-10 |
| CH395347A (de) | 1965-07-15 |
| NL277330A (enrdf_load_stackoverflow) | |
| BE616590A (fr) | 1962-10-18 |
| DE1239669B (de) | 1967-05-03 |
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