US3200001A - Method for producing extremely planar semiconductor surfaces - Google Patents

Method for producing extremely planar semiconductor surfaces Download PDF

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Publication number
US3200001A
US3200001A US188701A US18870162A US3200001A US 3200001 A US3200001 A US 3200001A US 188701 A US188701 A US 188701A US 18870162 A US18870162 A US 18870162A US 3200001 A US3200001 A US 3200001A
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Prior art keywords
semiconductor
carrier
carrier plates
crystal
semiconductor material
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Expired - Lifetime
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US188701A
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English (en)
Inventor
Merkel Hans
Leibenzeder Siegfried
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Siemens Schuckertwerke AG
Siemens Corp
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Siemens Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Definitions

  • the preferred direction of growth for example in the above-mentioned floating-zone pulling, need not at all be identical with a given crystallographic orientation of the crystal. In practice, this identity is very rarely attained, but diverges to a greater or lesser extent.
  • the pulling direction i.e. the longitudinal axis of the rod
  • the crystallographic (111)-direction may depart from the crystallographic (111)-direction by several angular degrees, for example up to about
  • the true crystallographic orientation was determined for such a rod, and the slices severed from such a rod were so placed as to obtain (111)-surfaces.
  • the rod was not subdivided by cutting in a direction perpendicularly to the pulling direction, but it was out under such an angle that the subsequent surfaces that formed a substratum for further growth were, as much as possible, oriented with crystallographic acfit ice
  • the crystallographic orientation can be neglected, which represents a considerable technological simplification. Furthermore, by virtue of the invention, better substratum surfaces for subsequent growth are achieved.
  • FIG. 1 shows an apparatus for depositing semiconductor material according to our invention
  • FIG. 2 represents the image of the surface of a silicon layer grown according to our inven tion obtained by means of an interference microscope.
  • a silicon carrier or substratum is prepared from a silicon rod pulled or converted to monocrystalline constitution by zone melting or crystal pulling from a melt in the direction, for example, that is, the longitudinal axis of a rod is within about 6 of the (100) direction of the crystal. Plates or wafers having a diameter of approximately 12 mm. are cut out of such a rod, the cutting faces extending perpendicular to the pulling direction;
  • the surface of these plates then defines an angle of about 6 with the crystallographic (100) surface.
  • the cut surface is ground, polished, etched and then heated in a hydrogen current.
  • An aqueous solution of hydrofluoric acid and nitric acid is particularly suitable as the etching liquid. It is preferable to add slight quantities of a commercially available wetting agent to this solution.
  • the etching liquid for example may consist of 5% hydrofluoric acid, 33% nitric acid, 2% of a commercial wetting agent, for example a mixture of a fattyalcohol sulfonates and alkyl aryl sulfonates, the remaining 60% being distilled water.
  • the heating in hydrogen current is preferably effected at a temperature between 1100 and 1400 C. for a period between 10 minutes and three hours.
  • the treated plates are subsequently placed into a silicon pyrolytic precipitation reactor, as shown in FIG. 1, in which hydrogen passes through inlet 1, through semiconductor compound evaporator 2, which may be maintained at 0 C., where the hydrogen picks up a quantity of semiconductor compound (shown in the drawing to be SiCl but other semiconductor compounds are equally suitable), through line 4 into inlet 12 of the reaction vessel.
  • semiconductor compound evaporator 2 which may be maintained at 0 C., where the hydrogen picks up a quantity of semiconductor compound (shown in the drawing to be SiCl but other semiconductor compounds are equally suitable)
  • stopcocks 5 and 6 may be completely or partially closed and stopcock 7 completely or partially opened so as to control the proportions of the entering gas.
  • the reaction vessel 8 comprises a quartz tube 11 with gas inlet 12; closure cap 13 with gas outlet 14. Fused into the closure cap 13 is a quartz tube 15 with a planar cover 16 on which the holder 17 is fastened.
  • silicon rod 18 which acts as a heater.
  • the silicon disc 19 is placed upon the rod to serve as a carrier.
  • a graphite plunger 2% is pushed into the quartz tube 15.
  • the high-frequency coil 21 is displaceable in the vertical direction by means not shown. It is first placed in such a position that the graphite plunger 2% as well as the lower portion of the silicon rod 18 are situated in the high-free quency field. The graphite plunger is heated rapidly. Shortly thereafter, the lower portion of the silicon rod 18 starts glowing.
  • the high-frequency coil and thus the heated zone is then moved upwardly along the silicon rod to the position shown in the illustration.
  • the temperature of the silicon disc 19 can be observed through a quartz window 22, thus permitting the apparatus to be adjusted and supervised.
  • waste gases are exhausted at outlet M.
  • a heating support consisting of the same material as the carrier plates and the semiconductor material to be grown thereon.
  • Monocrystalline silicon is suitable material for the heatas carrier and for precipitation thereon.
  • the surface of i the supporting heater structure can either be polished or have a coating, for example of SiC or of a nitrogencontaining layer such as Si N grown thereon.
  • the supporting heater structure which may also consist of materials such as tantalum and molybdenum, is preferably inductively heated. This can be done by means of conductance coil 4 energized by high-frequency current, In this manner the carrier is brought up to precipitation temperature.
  • the precipitation process is performed in a mixture of SiC1 and H of a molar ratio 1:25 passing into the reaction space through inlet nipple 12 of the quartz tube 11, at a rate of 30 liters per hour, while the carrier plates are kept at a temperature of about 1150" C. In approximately minutes a layer of 3511. thickness silicon is thus produced by decomposition of the reaction gases. The residual gases pass out of the reaction chamber through a'nipple 14. The direction of growth is identical with the pulling direction of the silicon rod from which the carrier plates have been cut.
  • the particular gaseous atmosphere from which the pyrolytic precipitation of the semiconductor material is effected is not critical for the method of the invention.
  • the silicon tetrachloride in the above-described example can be substituted without any other change by another silicon halogenide such as SiHCl SiH Cl Sil or SiBr or another silicon compound such as Silt-i or Si(C H
  • the precipitation can also be performed with a gaseous phase comprised of the gaseous semiconductor material and a gaseous carrier, for example hydrogen.
  • a noble gas such as argon, may be used as the gaseous carrier.
  • FIG. 2 represents the image of the surface of a silicon layer grown according to the invention, obtained by means of an interference microscope at the same magnification, a conspicuous freedom from disturbance of the interference strips is seen.
  • the method of the invention is applicable for the production of planar semiconductor surfaces from other semiconductor materials, for example germanium or A B semiconductor compounds, for example indium antimonide.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upon a monocrystalline carrier which comprises cutting a pulled semiconductor crystal into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching at least one cut surface of said carrier plates, and then precipitating the same semiconductor material as the semiconductor crystal upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upon a monocrystalline carrier which comprises cutting a pulled semiconductor crystal into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching at least one cut surface of said carrier plates with an etching liquid comprising an aqueous solution of hydrofluoric acid, nitric acid and a Wetting agent, and then precipitating the same semiconductor material as the semiconductor crystal upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upon a monocrystalline carrier which comprises cutting a pulled silicon semiconductor crystal into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching atleast one cut surface of said carrier plates with an etching liquid consisting essentially of about 5% hydrofluoric acid, about 33% nitric acid, about 2% wetting agent and about 60% water, and then precipitating silicon semiconductor material upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upon a pulled monocrystalline carrier which comprises cutting a semiconductor crystal into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching at least one cut surfaceof said carrier plates, heating said carrier plates in a hydrogen current to a temperature between 1100 and 1400 C., and then precipitating the same semiconductor material as the semiconductor crystal upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous. phase upon a pulled monocrystal-line carrier which comprises cutting a semiconductor crystal of the material to be precipitated into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching at least one cut surface of said carrier plates, placing said carrier plates upon a heating support surface of the same material to be precipitated and then precipitating semiconductor material upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upon a pulled monocrystalline carrier comprises. cutting a silicon semiconductor crystal into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching at least one cut surface of said carrier plates, placing said carrier plates upon a silicon heating support surface and then precipitating the same semiconductor material as the semiconductor crystal upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upona pulled monocrystalline car- 'rier which comprises cutting a semiconductor crystal into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching at least one cut surface of said carrier plates, placing said carrier plates upon a heating surface upon which a coating is grown and then precipitating semiconductor material upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upon a pulled monocrystalline carrier which comprises cutting a semiconductor crystal into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching at least one cut surface of said carrier plates, placing said carrier plates upon a heating surface having a grown coating of Si N and then precipitating semiconductor material upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upon a pulled monocrystalline carrier which comprises cutting a semiconductor crystal into carrier plates perpendicular to the direction of crystal pulling; grinding, polishing and etching at least one cut surface of said carrier plates, placing said carrier plates upon a heating surface having a grown coating of SiC and then precipitating semiconductor material upon said etched surface.
  • the method of producing planar semiconductor surfaces by precipitation of semiconductor material from the gaseous phase upon a pulled monocrystalline carrier which comprises cutting a semiconductor crystal into carrier plates perpendicular to the direction of crystal pull ing; grinding, polishing and etching at least one cut surface of said carrier plates, placing said carrier plates with the etched surface upon a heating support, inductively heating said heating support and then precipitating semiconductor material upon said etched surface.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US188701A 1961-04-22 1962-04-19 Method for producing extremely planar semiconductor surfaces Expired - Lifetime US3200001A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES73615A DE1239669B (de) 1961-04-22 1961-04-22 Verfahren zum Herstellen extrem planer Halbleiterflaechen
DES0074875 1961-07-18

Publications (1)

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US3200001A true US3200001A (en) 1965-08-10

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US (1) US3200001A (enrdf_load_stackoverflow)
BE (1) BE616590A (enrdf_load_stackoverflow)
CH (1) CH395347A (enrdf_load_stackoverflow)
DE (1) DE1239669B (enrdf_load_stackoverflow)
GB (1) GB1002697A (enrdf_load_stackoverflow)
NL (1) NL277330A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
US3585464A (en) * 1967-10-19 1971-06-15 Ibm Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material
EP0794561A1 (en) * 1996-03-04 1997-09-10 Shin-Etsu Handotai Company Limited Method of growing a silicon single crystal thin film in vapor phase
US20120060562A1 (en) * 2010-09-15 2012-03-15 Wacker Chemie Ag Method for producing thin silicon rods

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3057690A (en) * 1958-12-09 1962-10-09 Siemens Schuckerwerke Ag Method for producing hyperpure silicon
US3063811A (en) * 1954-05-18 1962-11-13 Siemens Ag Method of producing rodshaped bodies of crystalline silicon for semiconductor devices and semiconductor bodies obtained therefrom

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061745B (de) * 1957-11-28 1959-07-23 Siemens Ag Verfahren und Vorrichtung zum Ausrichten eines Keimkristalls beim Ziehen von Einkristallen
NL262949A (enrdf_load_stackoverflow) * 1960-04-02 1900-01-01

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3063811A (en) * 1954-05-18 1962-11-13 Siemens Ag Method of producing rodshaped bodies of crystalline silicon for semiconductor devices and semiconductor bodies obtained therefrom
US3057690A (en) * 1958-12-09 1962-10-09 Siemens Schuckerwerke Ag Method for producing hyperpure silicon
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
US3585464A (en) * 1967-10-19 1971-06-15 Ibm Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material
EP0794561A1 (en) * 1996-03-04 1997-09-10 Shin-Etsu Handotai Company Limited Method of growing a silicon single crystal thin film in vapor phase
US5868833A (en) * 1996-03-04 1999-02-09 Shin-Etsu Handotai Co., Ltd. Method of producing silicon single crystal thin film
US20120060562A1 (en) * 2010-09-15 2012-03-15 Wacker Chemie Ag Method for producing thin silicon rods

Also Published As

Publication number Publication date
BE616590A (fr) 1962-10-18
NL277330A (enrdf_load_stackoverflow)
GB1002697A (en) 1965-08-25
DE1239669B (de) 1967-05-03
CH395347A (de) 1965-07-15

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