FR66772E - Méthode de fabrication de redresseurs au sélénium - Google Patents

Méthode de fabrication de redresseurs au sélénium

Info

Publication number
FR66772E
FR66772E FR66772DA FR66772E FR 66772 E FR66772 E FR 66772E FR 66772D A FR66772D A FR 66772DA FR 66772 E FR66772 E FR 66772E
Authority
FR
France
Prior art keywords
selenium rectifiers
manufacturing selenium
manufacturing
rectifiers
selenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Hermann K J Strosche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR66772E publication Critical patent/FR66772E/fr
Expired legal-status Critical Current

Links

Classifications

    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06B—TREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B3/00—Passing of textile materials through liquids, gases or vapours to effect treatment, e.g. washing, dyeing, bleaching, sizing, impregnating
    • D06B3/04—Passing of textile materials through liquids, gases or vapours to effect treatment, e.g. washing, dyeing, bleaching, sizing, impregnating of yarns, threads or filaments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06B—TREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B2700/00—Treating of textile materials, e.g. bleaching, dyeing, mercerising, impregnating, washing; Fulling of fabrics
    • D06B2700/25—Sizing, starching or impregnating warp yarns; Making glazed yarn; Drying sized warp yarns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S62/00—Refrigeration
    • Y10S62/20—Materials used to prevent corrosion in refrigeration system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12708—Sn-base component
FR66772D 1939-01-22 1954-08-03 Méthode de fabrication de redresseurs au sélénium Expired FR66772E (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE1939V0035594 DE696361C (de) 1939-01-22 1939-01-22 Vorrichtung zum OElen und Avivieren von laufenden Textilfaeden
GB224048X 1939-03-17
DE2736672X 1951-05-25
DES23645A DE892193C (de) 1939-01-22 1951-06-22 Selengleichrichter
DE2867550X 1953-02-27
DES34699A DE1015542B (de) 1939-01-22 1953-08-06 Verfahren zur Herstellung von Selengleichrichterplatten
DEST9480A DE1056746B (de) 1939-01-22 1955-02-24 Verfahren zur Herstellung von Selengleichrichtern

Publications (1)

Publication Number Publication Date
FR66772E true FR66772E (fr) 1957-08-19

Family

ID=32330213

Family Applications (7)

Application Number Title Priority Date Filing Date
FR864102D Expired FR864102A (fr) 1939-01-22 1940-03-15 Redresseurs au sélénium et analogues
FR62920D Expired FR62920E (fr) 1939-01-22 1952-05-23 Méthode de fabrication de redresseurs au sélénium
FR63144D Expired FR63144E (fr) 1939-01-22 1952-06-20 Méthode de fabrication de redresseurs au sélénium
FR66041D Expired FR66041E (fr) 1939-01-22 1954-02-24 Méthode de fabrication de redresseurs au sélénium
FR66772D Expired FR66772E (fr) 1939-01-22 1954-08-03 Méthode de fabrication de redresseurs au sélénium
FR69423D Expired FR69423E (fr) 1939-01-22 1956-02-22 Méthode de fabrication de redresseurs au sélénium
FR69807D Expired FR69807E (fr) 1939-01-22 1956-05-11 Méthode de fabrication de redresseurs au sélénium

Family Applications Before (4)

Application Number Title Priority Date Filing Date
FR864102D Expired FR864102A (fr) 1939-01-22 1940-03-15 Redresseurs au sélénium et analogues
FR62920D Expired FR62920E (fr) 1939-01-22 1952-05-23 Méthode de fabrication de redresseurs au sélénium
FR63144D Expired FR63144E (fr) 1939-01-22 1952-06-20 Méthode de fabrication de redresseurs au sélénium
FR66041D Expired FR66041E (fr) 1939-01-22 1954-02-24 Méthode de fabrication de redresseurs au sélénium

Family Applications After (2)

Application Number Title Priority Date Filing Date
FR69423D Expired FR69423E (fr) 1939-01-22 1956-02-22 Méthode de fabrication de redresseurs au sélénium
FR69807D Expired FR69807E (fr) 1939-01-22 1956-05-11 Méthode de fabrication de redresseurs au sélénium

Country Status (7)

Country Link
US (4) US2314104A (fr)
BE (4) BE511647A (fr)
CH (5) CH224048A (fr)
DE (5) DE696361C (fr)
FR (7) FR864102A (fr)
GB (4) GB526482A (fr)
NL (2) NL93669C (fr)

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DE1008415B (de) * 1952-11-17 1957-05-16 Siemens Ag Verfahren zur Herstellung von Trockengleichrichterscheiben, insbesondere fuer Selengleichrichter
US2933661A (en) * 1953-08-05 1960-04-19 Fansteel Metallurgical Corp Rectifier and method of making same
US2853656A (en) * 1953-08-07 1958-09-23 Burroughs Corp Printed circuit panel assembly
US2981872A (en) * 1953-08-20 1961-04-25 Fansteel Metallurgical Corp Selenium rectifier
US2788474A (en) * 1953-09-10 1957-04-09 Westinghouse Electric Corp Rectifier assembly
US2817797A (en) * 1953-11-23 1957-12-24 United Carr Fastener Corp Rectifier
DE1121734B (de) * 1953-12-11 1962-01-11 Siemens Ag Trockengleichrichterelement und Verfahren zu seiner Herstellung
DE975284C (de) * 1954-02-19 1961-11-02 Licentia Gmbh Selengleichrichter mit einem auf der Selenschicht oder auf der Traegerelektrode aufgebrachten ringfoermigen Isolierstueck
DE977210C (de) * 1955-03-29 1965-06-10 Siemens Ag Verfahren zur Herstellung von Trockengleichrichtern mit einer bei Erwaermung Gas abgebenden Isolierschicht an den auf Druck beanspruchten Stellen
DE1116828B (de) * 1955-09-15 1961-11-09 Standard Elektrik Lorenz Ag Verfahren zur Herstellung eines Trockengleichrichters, insbesondere Selengleichrichters, bei welchem an den druckbeanspruchten Stellen eine isolierende Schicht ueber dem Selen angeordnet ist
US2858239A (en) * 1956-03-13 1958-10-28 Siemens Ag Method for producing selenium rectifiers
US3077386A (en) * 1958-01-02 1963-02-12 Xerox Corp Process for treating selenium
US3077421A (en) * 1961-03-13 1963-02-12 Gen Am Transport Processes of producing tin-nickelphosphorus coatings
GB937151A (en) * 1961-03-14 1963-09-18 Westinghouse Brake & Signal Method of manufacturing selenium rectifiers and rectifiers manufactured thereby
DE1141386B (de) * 1961-04-26 1962-12-20 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
US3077285A (en) * 1961-09-15 1963-02-12 Gen Am Transport Tin-nickel-phosphorus alloy coatings
DE1209210B (de) * 1961-10-31 1966-01-20 Siemens Ag Verfahren zur Herstellung von Selengleichrichter-tabletten mit einer im Verhaeltnis zu ihrer Gesamtflaeche kleinen aktiven Flaeche
DE1208822B (de) * 1961-10-31 1966-01-13 Siemens Ag Verfahren zur Herstellung von Selengleichrichtertabletten mit einer im Verhaeltnis zu ihrer Gesamtflaeche kleinen aktiven Flaeche
NL287468A (fr) * 1962-01-29
DE1185727B (de) * 1962-03-15 1965-01-21 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern
US3238426A (en) * 1962-06-08 1966-03-01 Gen Instrument Corp Casing for series connected rectifier assembly
DE1176282B (de) * 1962-07-23 1964-08-20 Ckd Modrany Narodni Podnik Selengleichrichter
US3361591A (en) * 1964-04-15 1968-01-02 Hughes Aircraft Co Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide
DE1279856B (de) * 1965-07-13 1968-10-10 Licentia Gmbh Verfahren zur Herstellung von Selengleichriehtern mit kleiner effektiver Gleichrichterflaeche
US3437479A (en) * 1967-04-07 1969-04-08 Mitsubishi Electric Corp Contact materials for vacuum switches
US3622712A (en) * 1969-08-29 1971-11-23 Rca Corp Device employing selenium-semiconductor heterojunction
US4518469A (en) * 1984-08-31 1985-05-21 At&T Technologies, Inc. Method of making non-precious metal electrical contacts by electroplating
US4566953A (en) * 1984-12-24 1986-01-28 At&T Technologies, Inc. Pulse plating of nickel-antimony films
US5333550A (en) * 1993-07-06 1994-08-02 Teledyne Mccormick Selph Tin alloy sheath material for explosive-pyrotechnic linear products
US5501154A (en) * 1993-07-06 1996-03-26 Teledyne Industries, Inc. Substantially lead-free tin alloy sheath material for explosive-pyrotechnic linear products
US20040055495A1 (en) * 2002-04-23 2004-03-25 Hannagan Harold W. Tin alloy sheathed explosive device

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FR949640A (fr) * 1946-04-19 1949-09-05 Int Standard Electric Corp Redresseurs de courant au sélénium et leurs procédés de fabrication
FR961847A (fr) * 1946-12-26 1950-05-23
BE485774A (fr) * 1947-11-29 1900-01-01
DE926987C (de) * 1952-06-10 1955-04-28 Falkenthal Verfahren zur Herstellung von duennen, zusammenhaengenden, homogenen, hexagonalen Selenschichten auf glatter, lichtdurch-laessiger Unterlage, z. B. auf Glas oder Quarzglas

Also Published As

Publication number Publication date
CH324876A (de) 1957-10-15
FR69423E (fr) 1958-11-06
FR66041E (fr) 1956-04-24
FR864102A (fr) 1941-04-19
BE534381A (fr)
DE892193C (de) 1953-10-05
US2314104A (en) 1943-03-16
US2908592A (en) 1959-10-13
FR62920E (fr) 1955-06-30
CH326740A (de) 1957-12-31
US2736672A (en) 1956-02-28
NL204119A (fr)
NL93669C (fr)
CH343031A (de) 1959-12-15
BE511647A (fr)
US2867550A (en) 1959-01-06
GB752751A (en) 1956-07-11
FR63144E (fr) 1955-08-24
CH224048A (fr) 1942-10-31
BE545512A (fr)
GB526482A (en) 1940-09-19
GB796896A (en) 1958-06-18
DE696361C (de) 1940-09-19
GB806661A (en) 1958-12-31
BE509989A (fr)
FR69807E (fr) 1958-12-30
CH311961A (de) 1955-12-15
DE974772C (de) 1961-04-20
DE1056746B (de) 1959-05-06
DE1015542B (de) 1957-09-12

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