FR3069101B1 - Module céramique pour le conditionnement intégré de semi-conducteur de puissance et procédé de préparation associé - Google Patents

Module céramique pour le conditionnement intégré de semi-conducteur de puissance et procédé de préparation associé Download PDF

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Publication number
FR3069101B1
FR3069101B1 FR1870829A FR1870829A FR3069101B1 FR 3069101 B1 FR3069101 B1 FR 3069101B1 FR 1870829 A FR1870829 A FR 1870829A FR 1870829 A FR1870829 A FR 1870829A FR 3069101 B1 FR3069101 B1 FR 3069101B1
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Prior art keywords
preparation process
power semiconductor
ceramic module
associated preparation
integrated conditioning
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FR1870829A
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FR3069101A1 (fr
Inventor
Zhaohui Wu
Wei Kang
Xiaoquan Guo
Jun Zhang
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Xi'an Baixin Chuangda Electronic Technology Co Cn
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Dongguan China Advanced Ceramic Tech Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/4871—Bases, plates or heatsinks
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    • H01L23/367—Cooling facilitated by shape of device
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
FR1870829A 2017-07-13 2018-07-12 Module céramique pour le conditionnement intégré de semi-conducteur de puissance et procédé de préparation associé Active FR3069101B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN1710571008 2017-07-13
CN201710571008.7A CN107369741A (zh) 2017-07-13 2017-07-13 带一体式金属围坝的led支架模组及其制备方法
CN201711176148.0A CN108109986B (zh) 2017-07-13 2017-11-22 一种功率半导体集成式封装用陶瓷模块及其制备方法

Publications (2)

Publication Number Publication Date
FR3069101A1 FR3069101A1 (fr) 2019-01-18
FR3069101B1 true FR3069101B1 (fr) 2022-10-07

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FR1870829A Active FR3069101B1 (fr) 2017-07-13 2018-07-12 Module céramique pour le conditionnement intégré de semi-conducteur de puissance et procédé de préparation associé

Country Status (9)

Country Link
US (2) US10461016B2 (fr)
JP (1) JP6549763B2 (fr)
KR (1) KR102107901B1 (fr)
CN (2) CN107369741A (fr)
DE (1) DE102018116847B4 (fr)
FR (1) FR3069101B1 (fr)
GB (1) GB2565227B (fr)
TW (1) TWI729301B (fr)
WO (1) WO2019011198A1 (fr)

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CN107369741A (zh) * 2017-07-13 2017-11-21 东莞市凯昶德电子科技股份有限公司 带一体式金属围坝的led支架模组及其制备方法
US20210083148A1 (en) * 2018-07-13 2021-03-18 Shenzhen Biue Spectrum Rick Technology Co., Ltd High power led chip back electrode integrated package module with stand
CN109411586A (zh) * 2018-10-09 2019-03-01 中山市瑞宝电子科技有限公司 一种通过电镀选镀不同材质的表面处理方法
CN109461720A (zh) * 2018-12-12 2019-03-12 湖北方晶电子科技有限责任公司 一种功率半导体贴片封装结构
CN110098170B (zh) * 2019-04-12 2020-01-14 潮州三环（集团）股份有限公司 一种提高电解镀均一性的陶瓷封装基板组合板
CN110034089A (zh) * 2019-04-17 2019-07-19 武汉利之达科技股份有限公司 一种低应力三维陶瓷基板及其制备方法
US11158566B2 (en) 2019-05-24 2021-10-26 Google Llc Integrated circuit with a ring-shaped hot spot area and multidirectional cooling
WO2021022150A1 (fr) * 2019-07-31 2021-02-04 Nootens Stephen P Interposeur de module de puissance multicouche au nitrure d'aluminium et procédé
CN110429009B (zh) * 2019-08-30 2024-03-29 桂林航天电子有限公司 一种错层结构的2类固体继电器
CN110923797A (zh) * 2019-11-08 2020-03-27 东莞市国瓷新材料科技有限公司 利用电解清洗、清洁改善dpc电镀填孔均匀性的工艺
CN111969096A (zh) * 2020-08-31 2020-11-20 福建天电光电有限公司 芯片封装结构
CN112687637B (zh) * 2020-12-24 2022-08-16 中国电子科技集团公司第十三研究所 一种立式金属陶瓷封装外壳、器件及制备方法
CN112864024A (zh) * 2021-01-08 2021-05-28 池州昀冢电子科技有限公司 陶瓷线路板及其制作方法
CN112968110B (zh) * 2021-02-03 2022-02-11 华引芯（武汉）科技有限公司 一种全无机封装大功率led器件及其制作方法
CN113571506B (zh) * 2021-09-24 2021-11-30 至芯半导体(杭州)有限公司 一种紫外发光二极管封装模组结构
CN114400223A (zh) * 2022-01-13 2022-04-26 西安交通大学 一种高集成的单陶瓷基板双面散热封装结构
CN116456609B (zh) * 2023-03-29 2024-03-26 南通威斯派尔半导体技术有限公司 预填充陶瓷覆铜陶瓷绝缘体线路板、功率器件及制备方法

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